Abstract: A switching element comprising: a first gate dielectric layer formed over a substrate; a second gate dielectric layer formed over the first gate dielectric layer to overlap a part of the first gate dielectric layer, and including a ferroelectric material; a second gate electrode formed over the second gate dielectric layer; and a first gate electrode located between the first and second gate dielectric layers, and configured to control the second gate dielectric layer to selectively have negative capacitance.

Abstract: The present disclosure relates to a resin composition for vehicle parts, a vehicle part manufactured using the resin composition, and a method of manufacturing the vehicle part. Ultra-high molecular weight siloxane and an inorganic filler are mixed with an alloy resin of polyamide and polyethylene at an optimal rate in order to improve friction resistance and wear resistance while maintaining excellent impact resistance and low hygroscopicity. When a vehicle part is manufactured using the resin composition, it is possible to eliminate the application of silicone-based oil or to remarkably reduce the amount of silicone-based oil that is used, whereby it is possible to reduce manufacturing costs. Furthermore, ingredients that are harmful to human beings, such as POM, are not included, whereby it is possible to improve the quality of air in a vehicle.

Abstract: A memory system may include a controller; and a plurality of memory modules, wherein a data input and output of the plurality of memory modules is performed with a single channel manner according to an address signal provided from the controller in common, wherein each of the plurality of memory modules includes a buffer chip and a plurality of memory chips coupled to the buffer chip, wherein all the buffer chips of the plurality of memory modules are directly coupled to the controller through independent input and output bus.

Abstract: An inversion signal generation circuit may include a transition detection signal generation circuit suitable for generating first to fourth transition detection signals, a first XOR gate suitable for receiving a fourth inversion signal and the first transition detection signal, and generating a first pre-inversion signal, a second XOR gate suitable for receiving the first pre-inversion signal and the second transition detection signal, and generating a second pre-inversion signal, a third XOR gate suitable for receiving the second transition detection signal and the third transition detection signal, a fourth XOR gate suitable for receiving the first pre-inversion signal and an output signal of the third XOR gate, and generating a third pre-inversion signal, a fifth XOR gate suitable for receiving the third pre-inversion signal and the fourth transition detection signal, and generating a fourth pre-inversion signal, and a first alignment circuit suitable for generating first to fourth inversion signals.

Abstract: A semiconductor memory device includes, a stack structure, and a channel structure passing through the stack structure, wherein the channel structure includes a channel layer passing through the stack structure and a memory layer surrounding the channel layer, the stack structure includes a gate contacting the channel layer, and the channel layer and the gate form a Schottky junction.

Abstract: A controller comprises an error correction circuit configured to check an error bit number of error bits in the read data and correct the error bits; a read retry range setting circuit configured to reset a preset read retry range with respect to the read data, and set a new read retry range based on the error bit number and an error correction capability of the error correction circuit; a read voltage setting circuit configured to reset the set read voltage and set, as a new read voltage, a voltage among a plurality of voltages of the reset read retry range, corresponding to the new read retry range; and a flash control circuit configured to control the memory device to perform a read retry operation on the stored data, using the new read voltage.

Abstract: Provided herein may be a memory system and a method of operating the memory system. The memory system may include: a semiconductor memory device including a plurality of memory cells to be programmed to an erase state and a plurality of program state; and a controller configured to control the semiconductor memory device to perform a program operation or a read operation in response to a request of a host. The controller may control the semiconductor memory device such that when, after a first program operation of the program operation has been performed, a number of program fail bits of the plurality of memory cells is greater than a maximum allowed number of ECC bits, a second program operation is performed on selected memory cells of the plurality of memory cells.

Abstract: An integrated circuit includes: one or more first sections in which first to Nth data (where N is an integer equal to or greater than 2) corresponding to one command are transferred through one line; and two or more second sections in which the first to Nth data are serial-to-parallel converted in 1:N and transferred through N lines, wherein whenever the command is applied, the first to Nth data are transferred without being inverted or transferred after being inverted repeatedly in at least one second section among the two or more second sections.

Abstract: A memory includes: a first data bus; a second data bus; and a plurality of bank groups. The bank groups output read data by alternately using the first data bus and the second data bus during read operations of the bank groups.

Abstract: A semiconductor apparatus may be provided. The semiconductor apparatus may include a fine training circuit configured to generate a fine result signal based on a clock signal, a data strobe signal, and a command. The semiconductor apparatus may include a coarse training circuit configured to generate a coarse result signal based on the clock signal, the data strobe signal, and the command and to set an offset of a write enable signal based on an offset control signal.

Abstract: A fibrous component for a vehicle exterior includes a skin layer having a multilayer structure comprising a laminated web including a reinforcing fiber and a binder fiber, the skin layer including pores that absorb sound; a sound absorbing pad layer disposed on an inner side of the skin layer and absorbing sound; and an adhesive layer disposed between the skin layer and the sound absorbing pad layer. The adhesive layer adheres the skin layer and the sound absorbing layer to each other.

Abstract: An address and command generation circuit, and a semiconductor system are disclosed. The address and command generation circuit may include a column address generator configured to correct an error of a column address, generate an internal column address based on an uncorrected column address when the column address corresponds to a read command, and generate the internal column address based on the corrected column address when the column address corresponds to a write command.

Abstract: There are provided a memory device, a memory system including the memory device, and an operating method of the memory system. The memory device includes a memory cell array including a plurality of memory blocks, a peripheral circuit for performing a read operation by applying a read voltage to a selected memory block among the plurality of memory blocks, and control logic for controlling the peripheral circuit to perform a normal read operation using initially set voltages and a read retry operation using new read voltages. The peripheral circuit performs the read retry operation by using the new read voltage corresponding to program states other than at least one program state included in a specific threshold voltage region among a plurality of program states of the selected memory block.

Abstract: An address and command generation circuit, and a semiconductor system are disclosed. The address and command generation circuit may include a column address generator configured to correct an error of a column address, generate an internal column address based on an uncorrected column address when the column address corresponds to a read command, and generate the internal column address based on the corrected column address when the column address corresponds to a write command.

Abstract: Provided is a pharmaceutical composition for preventing or treating neuronal diseases comprising, as an active ingredient, an exon 2-deleted AIMP2 variant (AIMP2-DX2) gene or a vector comprising the gene, and a method for treating neuronal diseases in animals other than humans, comprising administering the same to a subject in need of treatment. The pharmaceutical composition comprising, as an active ingredient, a AIMP2-DX2 gene or a vector comprising the gene has the effects of apoptosis inhibition, dyskinesia amelioration and oxidative stress inhibition and thus can be widely used for preventing and treating neuronal diseases such as Parkinson's disease and amyotrophic lateral sclerosis.

Abstract: In a method for operating a semiconductor memory device including a plurality of memory blocks, the method includes: receiving a read command for a first memory block among the plurality of memory blocks; referring to a block read count value corresponding to the first memory block; determining whether the block read count value has reached a first threshold value; and performing a read operation on the first memory block, based on the determined result.

Abstract: A semiconductor device includes a first integrated chip; a second integrated chip; a plurality of reference through-chip vias formed through the first and second integrated circuit chips; and at least a normal through-chip via formed through the first and second integrated circuit chips, wherein the first integrated circuit chip comprises: a plurality of reference sourcing circuits suitable for sourcing a reference current to the respective reference through-chip vias; and at least a sourcing circuit suitable for sourcing the reference current to the normal through-chip via, and wherein the second integrated circuit chip comprises: a plurality of reference sinking circuits suitable for sinking currents flowing through the respective reference through-chip vias; a line suitable for electrically coupling the plurality of reference through-chip vias; a comparison voltage generation circuit suitable for generating a plurality of comparison voltages based on a voltage of the line; at least a sinking circuit suitab

Abstract: A memory system memory system includes a first chip configured to perform a first operation, a second chip configured to perform a second operation, and a stacked memory device including a stacked structure of a plurality of memories. The stacked memory device being configured to be accessed by the first chip and the second chip through a shared bus.

Abstract: A data processing system includes a compute blade generating a write command to store data and a read command to read the data, and a memory blade. The compute blade has a memory that stores information about performance characteristics of each of a plurality of memories, and determines priority information through which eviction of a cache line is carried out based on the stored information.

Abstract: Provided is a pharmaceutical composition for preventing or treating neuronal diseases comprising, as an active ingredient, an exon 2-deleted AIMP2 variant (AIMP2-DX2) gene or a vector comprising the gene, and a method for treating neuronal diseases in animals other than humans, comprising administering the same to a subject in need of treatment. The pharmaceutical composition comprising, as an active ingredient, a AIMP2-DX2 gene or a vector comprising the gene has the effects of apoptosis inhibition, dyskinesia amelioration and oxidative stress inhibition and thus can be widely used for preventing and treating neuronal diseases such as Parkinson's disease and amyotrophic lateral sclerosis.