Patents by Inventor Dong-Yo Jheng

Dong-Yo Jheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200301289
    Abstract: A method includes receiving a layout that includes a shape to be formed on a photomask and determining a plurality of target lithographic contours for the shape, wherein the plurality of target lithographic contours includes a first target lithographic contour for a first set of process conditions and a second target lithographic contour for a second set of process conditions, performing a lithographic simulation of the layout to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions, determining a first edge placement error between the first simulated contour and the first target lithographic contour and a second edge placement error between the second simulated contour and the second target lithographic contour, and determining a modification to the layout based on the first edge placement error and the second edge placement error.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
  • Patent number: 10770304
    Abstract: A method of fabricating an integrated circuit (IC) uses a first lithography technique having a first resolution and a second lithography technique having a second resolution lower than the first resolution. The method includes deriving a graph from an IC layout, the graph having vertices and edges that connect some of the vertices, the vertices representing IC patterns in the IC layout, the edges representing spacing between the IC patterns that are smaller than the second resolution. The method further includes classifying the edges into at least two types, a first type of edges representing spacing that is smaller than the first resolution, a second type of edges representing spacing that is equal to or greater than the first resolution but smaller than the second resolution.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: September 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ken-Hsien Hsieh, Wen-Li Cheng, Dong-Yo Jheng, Chih-Ming Lai, Ru-Gun Liu
  • Patent number: 10678142
    Abstract: Various examples of a technique for performing optical proximity correction and for forming a photomask are provided herein. In some examples, a layout is received that includes a shape to be formed on a photomask. A plurality of target lithographic contours are determined for the shape that includes a first target contour for a first set of process conditions and a second target contour that is different from the first target contour for a second set of process conditions. A lithographic simulation of the layout is performed to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions. A modification to the layout is determined based on edge placement errors between the first simulated contour and the first target contour and between the second simulated contour and the second target contour.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: June 9, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
  • Patent number: 10665000
    Abstract: A pseudo H&E image producing method, including: inputting a grayscale interference image or a grayscale reflected image of a pathological sample to a first memory block of an information processing apparatus, and inputting a grayscale fluorescence image of the pathological sample to a second memory block of the information processing apparatus; using the information processing apparatus to perform a first color transform operation on the grayscale interference image or the grayscale reflected image to generate a first RGB image, and using the information processing apparatus to perform a second color transform operation on the grayscale fluorescence image to generate a second RGB image; and using the information processing apparatus to perform an image fusion operation and an intensity reversal operation on the first RGB image and the second RGB image to generate a pseudo H&E image. The present invention also discloses an optical system using the method.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: May 26, 2020
    Assignee: ACUSOLUTIONS INC.
    Inventors: Chien-Chung Tsai, Kuang-Yu Hsu, Dong-Yo Jheng, Sey-En Lin
  • Publication number: 20200083058
    Abstract: A method of fabricating an integrated circuit (IC) uses a first lithography technique having a first resolution and a second lithography technique having a second resolution lower than the first resolution. The method includes deriving a graph from an IC layout, the graph having vertices and edges that connect some of the vertices, the vertices representing IC patterns in the IC layout, the edges representing spacing between the IC patterns that are smaller than the second resolution. The method further includes classifying the edges into at least two types, a first type of edges representing spacing that is smaller than the first resolution, a second type of edges representing spacing that is equal to or greater than the first resolution but smaller than the second resolution.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: Ken-Hsien Hsieh, Wen-Li Cheng, Dong-Yo Jheng, Chih-Ming Lai, Ru-Gun Liu
  • Publication number: 20200043202
    Abstract: A pseudo H&E image producing method, including: inputting a grayscale interference image or a grayscale reflected image of a pathological sample to a first memory block of an information processing apparatus, and inputting a grayscale fluorescence image of the pathological sample to a second memory block of the information processing apparatus; using the information processing apparatus to perform a first color transform operation on the grayscale interference image or the grayscale reflected image to generate a first RGB image, and using the information processing apparatus to perform a second color transform operation on the grayscale fluorescence image to generate a second RGB image; and using the information processing apparatus to perform an image fusion operation and an intensity reversal operation on the first RGB image and the second RGB image to generate a pseudo H&E image. The present invention also discloses an optical system using the method.
    Type: Application
    Filed: October 9, 2019
    Publication date: February 6, 2020
    Inventors: Chien-Chung TSAI, Kuang-Yu HSU, Dong-Yo JHENG, Sey-En LIN
  • Publication number: 20200025744
    Abstract: An optical sectioning apparatus including: a first white light source unit for generating a first white light beam; a light mixing unit facing the first white light source unit for dividing the first white light beam into a first partial beam and a second partial beam; a reference end unit for making the second partial beam travel a round trip along an adjustable optical path; a first objective lens having a collimated side facing the light mixing unit; a carrier unit facing a focal side of the first objective lens; a projection lens having a light entering side facing the light mixing unit; and a sensing unit facing a light exiting side of the projection lens.
    Type: Application
    Filed: June 25, 2019
    Publication date: January 23, 2020
    Inventors: Chien-Chung TSAI, Kuang-Yu HSU, Dong-Yo JHENG
  • Patent number: 10483120
    Abstract: A method of fabricating an integrated circuit (IC) uses a first lithography technique having a first resolution and a second lithography technique having a second resolution lower than the first resolution. The method includes deriving a graph from an IC layout, the graph having vertices and edges that connect some of the vertices, the vertices representing IC patterns in the IC layout, the edges representing spacing between the IC patterns that are smaller than the second resolution. The method further includes classifying the edges into at least two types, a first type of edges representing spacing that is smaller than the first resolution, a second type of edges representing spacing that is equal to or greater than the first resolution but smaller than the second resolution.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: November 19, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ken-Hsien Hsieh, Wen-Li Cheng, Dong-Yo Jheng, Chih-Ming Lai, Ru-Gun Liu
  • Publication number: 20190252200
    Abstract: A method of fabricating an integrated circuit (IC) uses a first lithography technique having a first resolution and a second lithography technique having a second resolution lower than the first resolution. The method includes deriving a graph from an IC layout, the graph having vertices and edges that connect some of the vertices, the vertices representing IC patterns in the IC layout, the edges representing spacing between the IC patterns that are smaller than the second resolution. The method further includes classifying the edges into at least two types, a first type of edges representing spacing that is smaller than the first resolution, a second type of edges representing spacing that is equal to or greater than the first resolution but smaller than the second resolution.
    Type: Application
    Filed: April 24, 2019
    Publication date: August 15, 2019
    Inventors: Ken-Hsien Hsieh, Wen-Li Cheng, Dong-Yo Jheng, Chih-Ming Lai, Ru-Gun Liu
  • Publication number: 20190146355
    Abstract: Various examples of a technique for performing optical proximity correction and for forming a photomask are provided herein. In some examples, a layout is received that includes a shape to be formed on a photomask. A plurality of target lithographic contours are determined for the shape that includes a first target contour for a first set of process conditions and a second target contour that is different from the first target contour for a second set of process conditions. A lithographic simulation of the layout is performed to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions. A modification to the layout is determined based on edge placement errors between the first simulated contour and the first target contour and between the second simulated contour and the second target contour.
    Type: Application
    Filed: August 7, 2018
    Publication date: May 16, 2019
    Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
  • Patent number: 10276394
    Abstract: A method of fabricating an integrated circuit (IC) with first and second different lithography techniques includes providing a layout of the IC having IC patterns; and deriving a graph from the layout. The graph has vertices and edges connecting some of the vertices. The vertices represent the IC patterns. The edges are classified into at least two types, a first type connecting two vertices that are to be patterned separately with the first and second lithography techniques, a second type connecting two vertices that are to be patterned in a same process using the first lithography technique or to be patterned separately with the first and second lithography techniques. The method further includes decomposing the vertices into first and second subsets, wherein the IC patterns corresponding to the first and second subsets are to be patterned on a wafer using the first and second lithography techniques respectively.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ken-Hsien Hsieh, Wen-Li Cheng, Dong-Yo Jheng, Chih-Ming Lai, Ru-Gun Liu
  • Publication number: 20190080921
    Abstract: A method of fabricating an integrated circuit (IC) with first and second different lithography techniques includes providing a layout of the IC having IC patterns; and deriving a graph from the layout. The graph has vertices and edges connecting some of the vertices. The vertices represent the IC patterns. The edges are classified into at least two types, a first type connecting two vertices that are to be patterned separately with the first and second lithography techniques, a second type connecting two vertices that are to be patterned in a same process using the first lithography technique or to be patterned separately with the first and second lithography techniques. The method further includes decomposing the vertices into first and second subsets, wherein the IC patterns corresponding to the first and second subsets are to be patterned on a wafer using the first and second lithography techniques respectively.
    Type: Application
    Filed: September 14, 2017
    Publication date: March 14, 2019
    Inventors: Ken-Hsien Hsieh, Wen-Li Cheng, Dong-Yo Jheng, Chih-Ming Lai, Ru-Gun Liu
  • Patent number: 9499922
    Abstract: The present invention relates to a manufacturing method of a double cladding crystal fiber, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: November 22, 2016
    Assignee: National Taiwan University
    Inventors: Kuang-Yu Hsu, Mu-Han Yang, Dong-Yo Jheng, Sheng-Lung Huang
  • Patent number: 9444216
    Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: September 13, 2016
    Assignee: National Taiwan University
    Inventors: Kuang-Yu Hsu, Dong-Yo Jheng, Yi-Han Liao, Sheng-Lung Huang
  • Publication number: 20160040316
    Abstract: The present invention relates to a manufacturing method of a double cladding crystal fiber, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Application
    Filed: October 22, 2015
    Publication date: February 11, 2016
    Inventors: KUANG-YU HSU, MU-HAN YANG, DONG-YO JHENG, SHENG-LUNG HUANG
  • Patent number: 9195002
    Abstract: The present invention relates to a double cladding crystal fiber and manufacturing method thereof, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: November 24, 2015
    Assignee: National Taiwan University
    Inventors: Kuang-Yu Hsu, Mu-Han Yang, Dong-Yo Jheng, Sheng-Lung Huang
  • Patent number: 9153933
    Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: October 6, 2015
    Assignee: National Taiwan University
    Inventors: Kuang-Yu Hsu, Dong-Yo Jheng, Yi-Han Liao, Sheng-Lung Huang
  • Publication number: 20140079363
    Abstract: The present invention relates to a double cladding crystal fiber and manufacturing method thereof, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Application
    Filed: March 25, 2013
    Publication date: March 20, 2014
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: KUANG-YU HSU, MU-HAN YANG, DONG-YO JHENG, SHENG-LUNG HUANG
  • Publication number: 20140072010
    Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.
    Type: Application
    Filed: November 6, 2013
    Publication date: March 13, 2014
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: KUANG-YU HSU, DONG-YO JHENG, YI-HAN LIAO, SHENG-LUNG HUANG
  • Publication number: 20140060420
    Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.
    Type: Application
    Filed: November 6, 2013
    Publication date: March 6, 2014
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: KUANG-YU HSU, DONG-YO JHENG, YI-HAN LIAO, SHENG-LUNG HUANG