Abstract: The problem of the presence of excess flare in maskless photolithography systems is addressed by systems and methods that utilize an aerial imaging system to monitor flare associated with the maskless photolithography systems.

Abstract: Collection reflectors with multiple reflector elements defined on a curved surface are used to collect EUV optical radiation from an EUV emitting area. Each of the reflector elements can image the emitting area at or near a corresponding reflective element of a second multi-element reflector that overlaps radiation from each of the multiple reflector element of the collection reflector to illuminate a grating reticle. Systems with such a collection reflector can use fewer optical elements. In addition, grating reticles are defined on a curve substrate an include a plurality of grating phase steps so that the grating reticle provides phase curvature along two axes but with physical curvature along a single axis. Methods of producing varying duty cycle 1D patterns are also disclosed.

Abstract: A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of two optical reflectors disposed sequentially to transfer EUV radiation incident onto the first optical component to the pattern-source the substantially one-dimensional pattern of which is disposed in a curved surface. In one case, such combination includes only two optical reflectors (each may contain multiple constituent components). The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optical sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of two optical reflectors disposed sequentially to transfer EUV radiation incident onto the first optical component to the pattern-source the substantially one-dimensional pattern of which is disposed in a curved surface. In one case, such combination includes only two optical reflectors (each may contain multiple constituent components). The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes—includes a projection optical sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

Abstract: Phase conflicts in pattern transfer with phase masks can be resolve by exposing pattern features with a first pattern and a second pattern, wherein the second pattern is selected based on the phase conflicts. In scanned exposures using pulsed lasers, a number of exposures of the second pattern can be less than 20% of a total number of exposures.

Abstract: A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern: an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: Phase conflicts in pattern transfer with phase masks can be resolve by exposing pattern features with a first pattern and a second pattern, wherein the second pattern is selected based on the phase conflicts. In scanned exposures using pulsed lasers, a number of exposures of the second pattern can be less than 20% of a total number of exposures.

Abstract: Method of predicting a distribution of light in an illumination pupil of an illumination system includes identifying component(s) of the illumination system the adjustment of which affects this distribution and simulating the distribution based on a point spread function defined in part by the identified components. The point spread function has functional relationship with configurable setting of the illumination settings.

Abstract: A method of modeling an image intended to reside in a photoresist film on a substrate is provided. A simulated latent acid image of the image is produced, the simulated latent acid image is compressed in a predetermined direction, and developed to a pattern that enables (a) transfer of the pattern to the substrate or (b) further modeling of the pattern for transfer to the substrate.

Abstract: A method for matching characterizing features of an optical scanner against target characterizing features is provided. The characterizing features are produced from characterizing data (also referred to as a signature characteristic) produced from a scan of a mask by the scanner against target scanner signature characteristics produced from a scan of the mask by another optical scanner that produces the target scanner signature characteristic.

Abstract: A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.

Abstract: A new and useful concept for imaging a substrate is provided, that includes a source of illumination comprising a plurality of point light sources, and imaging the substrate by projecting each point light source through a near field projection schema (e.g an array of near field lens elements) to create a predetermined illumination pattern at the substrate.

Abstract: A way of predicting distribution of light in an illumination pupil, comprising: (a) identifying one or more component(s) of an illumination system having an illumination pupil, where the component(s) affect the distribution of light in the illumination pupil; (b) generating a point spread function that depends on the identified component(s) and has a functional relationship with the configurable settings of the illumination system; and (c) predicting the distribution of light in the illumination pupil using the point spread function.

Abstract: A method of modeling an image intended to reside in a photoresist film on a substrate is provided. A simulated latent acid image of the image is produced, the simulated latent acid image is compressed in a predetermined direction, and developed to a pattern that enables (a) transfer of the pattern to the substrate or (b) further modeling of the pattern for transfer to the substrate.

Abstract: A method for matching characterizing features of an optical scanner against target characterizing features is provided. The characterizing features are produced from characterizing data (also referred to as a signature characteristic) produced from a scan of a mask by the scanner against target scanner signature characteristics produced from a scan of the mask by another optical scanner that produces the target scanner signature characteristic.

Abstract: A method of imaging a pattern in a microlithographic exposure apparatus includes performing two exposures, each with a different mask, the superposition of the images defined by the two masks produces the complete circuit pattern. A dipolar illumination mode is used for each exposure, the dipoles of the two exposures being mutually perpendicular. The dipolar illumination mode of the first exposure is used to image mask features parallel to a first direction, and the dipolar illumination mode of the second exposure is used to image mask features perpendicular to the first direction.