Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.