Patents by Inventor Du Li
Du Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9083757Abstract: Methods and apparatus for determining recommended geographic server locations for online social networks by attempting to minimize user-server latency and inter-user communications latency. In an embodiment, geographic and relationship information for a plurality of users is acquired. The plurality of users may belong to one or more networks. The acquired information is transformed into a graph. A first plurality of clusters is generated with a first clustering algorithm. A second plurality of clusters is generated by iteratively examining pairs of the first plurality clusters, and swapping nodes between the examined clusters if it will reduce a total cut weight of the graph and locate each pair of nodes within a defined maximum distance from the centroid of the target cluster. In an embodiment, a method uses a joint analysis approach based upon characteristics of a plurality of existing networks.Type: GrantFiled: November 21, 2012Date of Patent: July 14, 2015Assignee: Telefonaktiebolaget L M Ericsson LLPInventors: Ying Zhang, Du Li
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Patent number: 8989774Abstract: A method for locating a mobile device inside a building by using a plurality of reference areas in the building as satellites. A scan is obtained by the mobile device at an unknown location in the building. The scan includes a plurality of detected WAPs with a corresponding RSSI for each detected WAP. The method to improve accuracy of a semantic indoor positioning system by generating a vector of distance scores based on the scan for comparison with vectors of survey distance scores corresponding to the reference areas. The method includes arranging the detected WAPs into an ordered list, extracting a set of WAP tuples from the ordered list, retrieving a set of probabilities for each reference area, calculating a distance score for each reference area, generating the vector of distance scores, and comparing the vector of distance scores with each of the vectors of survey distance scores.Type: GrantFiled: February 8, 2013Date of Patent: March 24, 2015Assignee: Telefonaktiebolaget L M Ericsson (publ)Inventor: Du Li
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Patent number: 8849977Abstract: A first control node and a method therein for selecting the first control node or a second control node to act as a server are provided. The first and second control nodes are comprised in an overlay network. The first control node obtains a first indication relating to a ranking of a suitability of the first control node to act as the server. Furthermore, the first control node receives a second indication from the second control node. The second indication relates to a ranking of a suitability of the second control node to act as the server. Then, the first control node selects, based on the first and second indications, one of the first and second control nodes to act as the server for managing a master representation of a distributed shared memory being accessible within the overlay network.Type: GrantFiled: March 9, 2012Date of Patent: September 30, 2014Assignee: Telefonaktiebolaget LM Ericsson (Publ)Inventors: Johan Kristiansson, Andreas Ekeroth, Du Li
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Publication number: 20140195470Abstract: A method for grouping trips of a mobile device, a trip including a set of trip traces from a plurality of traces collected from base stations. Each base station includes a unique station-ID. Each trace includes a station-ID and an association time indicating when the mobile device was associated with the base station. The mobile device is associated with at most one base station at any point in time. The method to group two trips by calculating an edit distance using an approximate string matching algorithm. The method includes identifying traces for the two trips, extracting ordered sets of station-IDs from the traces, calculating the edit distance between the two trips by applying the approximate string matching algorithm, to the ordered sets of station-IDs, checking if the edit distance is less than a preset edit distance threshold, and grouping the two trips into a group of trips.Type: ApplicationFiled: January 8, 2013Publication date: July 10, 2014Applicant: TELEFONAKTIEBOLAGET L M ERICSSON (PUB)Inventors: Bo Xing, Du Li
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Publication number: 20140176060Abstract: In some embodiments, the charging magnetic field produced in an air gap within an inductive charger for a hearing aid or other miniature device is shaped by lateral protrusions, which draw the magnetic field away from a body of a device battery situated behind a receiver inductor. Shaping the magnetic field allows reducing the magnetic field flux intercepted by the battery (rater than the receiver inductor), reducing the inductive heating of the battery. A charging element produces a high-frequency, ˜120 kHz, magnetic field inside the gap in which the hearing aid or other device is inserted to charge its battery. A loosely-coupled magnetic transformer circuit forms a resonant tank circuit that is excited, by a feedback control circuit, at its resonant frequency to ensure power transfer across the large gap regardless of the dimensional variations of the gap and the relative position of the hearing aid in the gap.Type: ApplicationFiled: July 2, 2013Publication date: June 26, 2014Inventors: Vatche VORPERIAN, Leon ALKALAI, Donald HUNTER, Du LI, Noam LOTAN
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Patent number: 8759944Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.Type: GrantFiled: May 21, 2013Date of Patent: June 24, 2014Assignee: Micron Technology, Inc.Inventors: David H. Wells, Du Li
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Publication number: 20140143407Abstract: Methods and apparatus for determining recommended geographic server locations for online social networks by attempting to minimize user-server latency and inter-user communications latency. In an embodiment, geographic and relationship information for a plurality of users is acquired. The plurality of users may belong to one or more networks. The acquired information is transformed into a graph. A first plurality of clusters is generated with a first clustering algorithm. A second plurality of clusters is generated by iteratively examining pairs of the first plurality clusters, and swapping nodes between the examined clusters if it will reduce a total cut weight of the graph and locate each pair of nodes within a defined maximum distance from the centroid of the target cluster. In an embodiment, a method uses a joint analysis approach based upon characteristics of a plurality of existing networks.Type: ApplicationFiled: November 21, 2012Publication date: May 22, 2014Applicant: TELEFONAKTIEBOLAGET L M ERICSSON (PUBL)Inventors: Ying ZHANG, Du LI
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Publication number: 20140106773Abstract: A method for locating a mobile device inside a building by using a plurality of reference areas in the building as satellites. A scan is obtained by the mobile device at an unknown location in the building. The scan includes a plurality of detected WAPs with a corresponding RSSI for each detected WAP. The method to improve accuracy of a semantic indoor positioning system by generating a vector of distance scores based on the scan for comparison with vectors of survey distance scores corresponding to the reference areas. The method includes arranging the detected WAPs into an ordered list, extracting a set of WAP tuples from the ordered list, retrieving a set of probabilities for each reference area, calculating a distance score for each reference area, generating the vector of distance scores, and comparing the vector of distance scores with each of the vectors of survey distance scores.Type: ApplicationFiled: February 8, 2013Publication date: April 17, 2014Applicant: TELEFONAKTIEBOLAGET L M ERICSSON (PUBL)Inventor: Du Li
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Publication number: 20140097508Abstract: An accelerometer has E-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor. The measurement mass has a mass, range-of-motion stops, and resilient beams located within a support frame. The range-of-motion stops are coupled to the support frame by connection beams, and the mass is coupled with the range-of-motion stops by groups of E-shaped resilient beams. The ends of each resilient beam are connected to the range-of-motion stops, and the middle of each resilient beam is connected to the mass.Type: ApplicationFiled: September 19, 2013Publication date: April 10, 2014Applicant: Chinese Academy of Sciences Institute of Geology and GeophysicsInventors: Du Li YU, Lian Zhong Yu, Chang Chun Yang
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Publication number: 20140069191Abstract: An accelerometer, comprises, a measurement mass, a top cap silicon wafer and a bottom cap silicon wafer, which both are coupled with the said measurement mass; the measurement mass comprises a support frame, a mass, and a plurality of resilient beams; the mass and the resilient beams are located within the support frame; the mass and the support frame are connected by several sets of the resilient beams, and each set comprises two resilient folding beams; the resilient folding beams are symmetrically provided with respect to the midline of the mass; a connection beam is provided in between each set of the resilient folding beams to connect the resilient folding beams together. Silicon wafers with electrodes are bonded on the top and bottom surfaces of the measurement mass; and forms a capacitor with the measurement mass. The accelerometer in the present invention has a large mode isolation ratio, and it is symmetrical in high order vibrational modes , which further decreases the noise of the MEMS chip.Type: ApplicationFiled: September 19, 2013Publication date: March 13, 2014Applicant: Chinese Academy of Sciences Institute of Geology and GeophysicsInventors: Du Li YU, Lian Zhong Yu, Chang Chun Yang
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Publication number: 20130303184Abstract: A system for detecting state transitions when apparatuses move between significant places or routes without having to employ high resolution, and high energy cost, localization technologies. Apparatuses may receive position information via lower resolution/lower energy cost localization resources, and this information may be used to determine whether the current position of the apparatus corresponds to a significant place or route. If the apparatus is determined to be positioned in a significant place or route, a further determination may be made as to whether at least one second level classifier exists for the significant place or route. Second level classifiers may be utilized to determine when apparatuses transition from one state (e.g., one significant place or route) to another. Upon detection of a state transition based on the second level classifier, a new localization configuration may be applied in the apparatus.Type: ApplicationFiled: September 23, 2010Publication date: November 14, 2013Applicant: Nokia CorporationInventors: Guang Yang, Du Li, Yifei Jiang, Zhigang Liu
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Publication number: 20130288703Abstract: A system that uses historical position information accumulated in an apparatus to determine whether locations and/or routes may be classified as significant. A classification of a location or route as significant may be utilized in configuring localization in the apparatus. Localization configuration may include, for example, setting a type technology utilized in determining apparatus position.Type: ApplicationFiled: September 1, 2010Publication date: October 31, 2013Inventors: Guang Yang, Du Li, Yifei Jiang, Zhigang Liu
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Publication number: 20130248943Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.Type: ApplicationFiled: May 21, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: David H. Wells, Du Li
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Publication number: 20130238741Abstract: A first control node and a method therein for selecting the first control node or a second control node to act as a server are provided. The first and second control nodes are comprised in an overlay network. The first control node obtains a first indication relating to a ranking of a suitability of the first control node to act as the server. Furthermore, the first control node receives a second indication from the second control node. The second indication relates to a ranking of a suitability of the second control node to act as the server. Then, the first control node selects, based on the first and second indications, one of the first and second control nodes to act as the server for managing a master representation of a distributed shared memory being accessible within the overlay network.Type: ApplicationFiled: March 9, 2012Publication date: September 12, 2013Applicant: Telefonaktiebolaget L M Ericsson (publ)Inventors: Johan KRISTIANSSON, Andreas EKEROTH, Du LI
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Patent number: 8445387Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.Type: GrantFiled: March 15, 2011Date of Patent: May 21, 2013Assignee: Micron Technology, Inc.Inventors: David H. Wells, Du Li
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Publication number: 20120235913Abstract: A data card includes an apparatus body, a plug, and a cap, where the cap is disposed with a mouse module and a mouse power supply, and the apparatus body is disposed with a receiving module. The mouse module is configured to sense and calculate a moving distance of a spatial position of the cap, convert the calculated moving distance of the spatial position of the cap into an instruction for moving computer cursor position, and send the instruction for moving the computer cursor position to the receiving module; the receiving module is electrically connected to the plug and is configured to receive the instruction for moving the computer cursor position, input the instruction for moving the computer cursor position into a chip of a computer through the plug and a slot, and control a position of a cursor on a computer screen through the chip of the computer.Type: ApplicationFiled: May 24, 2012Publication date: September 20, 2012Applicant: Huawei Device Co., Ltd.Inventors: Qinna Chen, Huaqi Hao, Bin Zhang, Du Li, Guifu Xie
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Patent number: 8121224Abstract: Various embodiments of the present invention provide systems and methods for media defect detection. For example, a data receiving system is disclosed that includes a data signal provided from a medium that may include a defective portion. An absolute value circuit receives the data signal and provides an output corresponding to an absolute value of the data signal. The output corresponding to the absolute value of the data signal is input to a filter that filters it and provides a filtered output. In some cases, the filter is a digital filter operable to integrate the absolute value of the data signal. A comparator receives the output from the filter and compares it with a threshold value. The result of the comparison indicates a defect status of the medium.Type: GrantFiled: April 29, 2008Date of Patent: February 21, 2012Assignee: Agere Systems Inc.Inventors: Weijun Tan, Shaohua Yang, George Mathew, Du Li
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Publication number: 20110208810Abstract: Methods and systems for optimizing server polling by a mobile client are described, thereby allowing mobile terminals to conserve battery life by more efficiently using resources such as the processor and transceiver in the mobile terminal A broker system may be used to minimize wireless communication traffic used for polling. A broker stub intercepts server polling messages at the client, multiplexes the sever requests together, and forwards the multiplexed message to a broker skeleton that de-multiplexes and forwards the messages as appropriate. Polling may also be dynamically adapted based on user behavior, or a server guard may be used to monitor changes to data, and notify a client to poll its respective server when the server guard detects new or updated data on that server for that client.Type: ApplicationFiled: April 29, 2011Publication date: August 25, 2011Applicant: NOKIA CORPORATIONInventors: Du Li, Umesh Chandra
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Publication number: 20110163354Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.Type: ApplicationFiled: March 15, 2011Publication date: July 7, 2011Applicant: MICRON TECHNOLOGY, INC.Inventors: David H. Wells, Du Li
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Patent number: 7906830Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.Type: GrantFiled: December 17, 2008Date of Patent: March 15, 2011Assignee: Micron Technology, Inc.Inventors: David H. Wells, Du Li