Patents by Inventor Duck-Hwan Kim

Duck-Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9617146
    Abstract: A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: April 11, 2017
    Assignees: Samsung Electronics Co., Ltd., KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION
    Inventors: Duck Hwan Kim, In Sang Song, Jea Shik Shin, Ho Soo Park, Jae-Sung Rieh, Byeong Kwon Ju
  • Publication number: 20170077898
    Abstract: An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.
    Type: Application
    Filed: August 9, 2016
    Publication date: March 16, 2017
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Ho Soo PARK, Jea Shik SHIN, Sang Uk SON, Yeong Gyu LEE, Moon Chul LEE, Duck Hwan KIM, Chul Soo KIM
  • Patent number: 9594055
    Abstract: A sensing apparatus using a radio frequency and a manufacturing method thereof is provided. A sensing apparatus using a radio frequency includes a protecting layer configured to protect a substrate from migration of electrons occurring as the radio frequency is applied to a first electrode and a second electrode, a channel forming layer configured to form a channel based on a field between the first electrode and the second electrode, the channel forming layer using a polarized carbon-based nano material to form the channel, and a sensing layer configured to sense glucose using a medium material that is attached on the carbon-based nano material.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: March 14, 2017
    Assignees: Samsung Electronics Co., Ltd., Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Duck Hwan Kim, Seong Chan Jun, Chul Soo Kim, In Sang Song, Jea Shik Shin
  • Publication number: 20160344367
    Abstract: A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.
    Type: Application
    Filed: March 2, 2016
    Publication date: November 24, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Tae Yoon KIM, Yeong Gyu LEE, Moon Chul LEE, Jae Chang LEE, Duck Hwan KIM
  • Publication number: 20160329481
    Abstract: A bulk acoustic wave resonator includes a resonating part comprising a first electrode, a piezoelectric layer, and a second electrode sequentially laminated, wherein the resonating part is disposed on a substrate; and a cap comprising a groove part configured to accommodate the resonating part, a frame bonded to the substrate by a bonding agent, and a permeation preventing part configured to block the bonding agent from permeating into the groove part from the frame.
    Type: Application
    Filed: January 8, 2016
    Publication date: November 10, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Tae Yoon KIM, Yeong Gyu LEE, Moon Chul LEE, Jae Chang LEE, Duck Hwan KIM
  • Publication number: 20160315244
    Abstract: In examples, there is provided a bulk acoustic wave resonator including a substrate; a resonating part including a first electrode, a piezoelectric layer, and a second electrode, laminated on an upper surface of the substrate, a cap bonded to the substrate by a bonding agent; and a sealing layer formed on an externally exposed surface of the bonding agent. This structure provides for a bulk acoustic wave resonator with improved reliability.
    Type: Application
    Filed: January 13, 2016
    Publication date: October 27, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Khudoyberdiyev KHURSHIDJON, Duck Hwan KIM, Yeong Gyu LEE, Ho Joon PARK, Moon Chul LEE
  • Publication number: 20160301380
    Abstract: A bulk acoustic wave resonator including a substrate; an air cavity formed on the substrate; and a resonating part formed on the air cavity and comprising a first electrode, a piezoelectric layer, and a second electrode which are sequentially laminated, wherein a cross section of the air cavity has a short side, a long side opposing the short side, a first lateral side and a second lateral side connecting the short side and the long side to each other, the first and second lateral sides are inclined, and a surface roughness of the first electrode, the piezoelectric layer, the second electrode, or any combination thereof is between 1 nm and 100 nm.
    Type: Application
    Filed: January 27, 2016
    Publication date: October 13, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Moon Chul LEE, Yeong Gyu LEE, Chul Soo KIM, Jea Shik SHIN, Duck Hwan KIM, Sang Uk SON
  • Patent number: 9455685
    Abstract: An acoustic filter includes a signal input port, a ladder-type filter, a first branch ladder-type filter, a second branch ladder-type filter, and a signal output port. The first branch ladder-type filter and the second branch ladder-type filter are connected in parallel to each other. The signal input port is connected to the ladder-type filter. The ladder-type filter circuit is connected in series to the first branch ladder-type filter and the second branch ladder-type filter. The first branch ladder-type filter circuit and the second branch ladder-type filter are connected to the signal output port.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: September 27, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jie Ai Yu, Duck Hwan Kim, Ho Soo Park, In Sang Song, Jea Shik Shin
  • Patent number: 9397229
    Abstract: A nano resonance apparatus includes a gate electrode configured to generate a magnetic field, and a nanowire connecting a source electrode to a drain electrode and configured to vibrate in the presence of the magnetic field. The nanowire includes a protruding portion extending in a direction of the gate electrode.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: July 19, 2016
    Assignees: Samsung Electronics Co., Ltd., Korea University Industrial & Academic Collaboration Foundation
    Inventors: In Sang Song, Ho Soo Park, Duck Hwan Kim, Sang Uk Son, Jae Shik Shin, Jae-Sung Rieh, Byeong Kwon Ju, Dong Hoon Hwang
  • Publication number: 20160204761
    Abstract: There are provided an acoustic resonator and a method of manufacturing the same. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator also includes a substrate disposed below the resonance part and including a via hole penetrating through the substrate and a connection conductor disposed in the via hole and connected to at least one of the first and second electrodes.
    Type: Application
    Filed: November 4, 2015
    Publication date: July 14, 2016
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Moon Chul LEE, Duck Hwan KIM, Yeong Gyu LEE, Chul Soo KIM, Jie Ai YU, Sang Uk SON
  • Patent number: 9385303
    Abstract: Provided are a resonator and a method of fabricating the same. The resonator may include a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a control layer disposed on the second electrode and having a frame with an uneven surface.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: July 5, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Sang Song, Ho Soo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Jea Shik Shin, Moon Chul Lee
  • Publication number: 20160163954
    Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.
    Type: Application
    Filed: October 28, 2015
    Publication date: June 9, 2016
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jea Shik SHIN, Sang Uk SON, Yeong Gyu LEE, Moon Chul LEE, Ho Soo PARK, Duck Hwan KIM, Chul Soo KIM
  • Publication number: 20160164489
    Abstract: A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof.
    Type: Application
    Filed: November 6, 2015
    Publication date: June 9, 2016
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jea Shik SHIN, Sang Uk SON, Duck Hwan KIM
  • Patent number: 9360443
    Abstract: A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: June 7, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon Chul Lee, Duck Hwan Kim, In Sang Song, Jea Shik Shin
  • Publication number: 20160079956
    Abstract: There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.
    Type: Application
    Filed: March 4, 2015
    Publication date: March 17, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sang Uk SON, Duck Hwan KIM, Jea Shik SHIN, Yeong Gyu LEE, Chul Soo KIM, Moon Chul LEE, Ho Soo PARK, Jie Ai YU
  • Publication number: 20160033435
    Abstract: A method of measuring biological sample properties and a biological sample property measuring apparatus is provided. A method of measuring biological sample properties includes disposing a biomaterial to contact a sensing unit, detecting a radio frequency (RF) signal flowing through the sensing unit, and obtaining an RF property indicator of the biomaterial based on the detected RF signal.
    Type: Application
    Filed: October 13, 2015
    Publication date: February 4, 2016
    Applicants: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Uk SON, Duck Hwan KIM, In Sang SONG, Seong Chan JUN, Ho Soo PARK, Jea Shik SHIN, Moon Chul LEE
  • Publication number: 20160035960
    Abstract: An acoustic resonator is provided in which loss of acoustic waves in a transverse direction may be reduced through a cavity formed in an acoustic resonance unit including a first electrode, a piezoelectric layer, and a second electrode, and in which acoustic waves in a longitudinal direction may be reduced by forming an air gap between the acoustic resonance unit and a substrate. Whereby, a quality factor may be improved.
    Type: Application
    Filed: March 9, 2015
    Publication date: February 4, 2016
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Moon Chul LEE, Jea Shik SHIN, Young Gyu LEE, Ho Soo PARK, Duck Hwan KIM
  • Patent number: 9246468
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: January 26, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Uk Son, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, In Sang Song, Jea Shik Shin, Moon Chul Lee, Jing Cui
  • Patent number: 9219465
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: December 22, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Soo Kim, Dal Ahn, Jae Shik Shin, In Sang Song, Duck Hwan Kim, Sang Uk Son, Ho Soo Park
  • Patent number: 9184724
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: November 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Soo Kim, Dal Ahn, Jae Shik Shin, In Sang Song, Duck Hwan Kim, Sang Uk Son, Ho Soo Park