Patents by Inventor Dyson H. Tai

Dyson H. Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210051250
    Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 18, 2021
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
  • Patent number: 10892290
    Abstract: Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at the openings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: January 12, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Chia-Chun Miao, Ming Zhang, Dyson H. Tai
  • Publication number: 20200279880
    Abstract: A flip-chip sample imaging device with self-aligning lid includes an image sensor chip, a fan-out substrate, and a lid. The image sensor chip includes (a) a pixel array sensitive to light incident on a first side of the image sensor chip and (b) first electrical contacts disposed on the first side and electrically connected to the pixel array. The fan-out substrate is disposed on the first side, is electrically connected to the first electrical contacts, forms an aperture over the pixel array to partly define a sample chamber over the pixel array, and forms a first surface facing away from the first side. The lid is disposed on the first surface of the fan-out substrate, facing away from the first side, to further define the chamber. The lid includes an inner portion protruding into the aperture to align the lid relative to the fan-out substrate.
    Type: Application
    Filed: March 1, 2019
    Publication date: September 3, 2020
    Inventors: Ming ZHANG, Yin QIAN, Chia-Chun MIAO, Dyson H. TAI
  • Patent number: 10761385
    Abstract: A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: September 1, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Ming Zhang, Libo Weng, Cheng Zhao, Yin Qian, Chia-Chun Miao, Zhiqiang Lin, Dyson H. Tai
  • Patent number: 10739646
    Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: August 11, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Ming Zhang, Yin Qian, Libo Weng, Dyson H. Tai, Chia-Ying Liu, Chia-Jung Liu
  • Publication number: 20200235158
    Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 23, 2020
    Inventors: Xianmin Yi, Jingming Yao, Philip Cizdziel, Eric Webster, Duli Mao, Zhiqiang Lin, Jens Landgraf, Keiji Mabuchi, Kevin Johnson, Sohei Manabe, Dyson H. Tai, Lindsay Grant, Boyd Fowler
  • Patent number: 10687003
    Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: June 16, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Keiji Mabuchi, Dyson H. Tai, Oray Orkun Cellek, Duli Mao, Sohei Manabe
  • Patent number: 10566364
    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: February 18, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Lequn Liu
  • Publication number: 20190305027
    Abstract: Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at the openings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.
    Type: Application
    Filed: March 27, 2018
    Publication date: October 3, 2019
    Inventors: Yin QIAN, Chia-Chun MIAO, Ming ZHANG, Dyson H. TAI
  • Patent number: 10418408
    Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: September 17, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Chia-Chun Miao, Gang Chen, Yin Qian, Duli Mao, Dyson H. Tai, Lindsay Grant
  • Publication number: 20190196284
    Abstract: A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 27, 2019
    Applicant: OmniVision Technologies, Inc.
    Inventors: Ming Zhang, Libo Weng, Cheng Zhao, Yin Qian, Chia-Chun Miao, Zhiqiang Lin, Dyson H. Tai
  • Publication number: 20190181173
    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
    Type: Application
    Filed: February 14, 2019
    Publication date: June 13, 2019
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Lequn Liu
  • Patent number: 10312391
    Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: June 4, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Duli Mao, Vincent Venezia, Dyson H. Tai, Bowei Zhang
  • Patent number: 10290670
    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: May 14, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Lequn Liu
  • Patent number: 10269850
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: April 23, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Yi Ma
  • Patent number: 10243015
    Abstract: A method for fabricating a photosensor array integrated circuit includes forming an isolation trench by a method comprising depositing a hard mask layer on a [110]-oriented single-crystal silicon substrate wafer, depositing, exposing, and developing a photoresist on the hard mask layer to define photoresist openings of locations for the trenches, dry plasma etching through the photoresist openings to form openings in the hard mask layer of locations for the trenches, and performing an anisotropic wet etch through the openings in the hard mask layer. In particular embodiments, the trenches are lined with P-type silicon, a silicon dioxide dielectric, and an additional oxide layer before being filled with tungsten.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: March 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xin Wang, Dajiang Yang, Siguang Ma, Duli Mao, Dyson H. Tai
  • Patent number: 10211243
    Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.
    Type: Grant
    Filed: April 4, 2018
    Date of Patent: February 19, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chia-Chun Miao, Yin Qian, Chao-Hung Lin, Chen-Wei Lu, Dyson H. Tai, Ming Zhang, Jin Li
  • Patent number: 10153310
    Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: December 11, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Bowei Zhang, Vincent Venezia, Gang Chen, Dyson H. Tai, Duli Mao
  • Patent number: 10147751
    Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.
    Type: Grant
    Filed: April 4, 2018
    Date of Patent: December 4, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chia-Chun Miao, Yin Qian, Chao-Hung Lin, Chen-Wei Lu, Dyson H. Tai, Ming Zhang, Jin Li
  • Patent number: 10147754
    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: December 4, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dyson H. Tai, Cunyu Yang, Gang Chen, Jing Ye, Xi-Feng Gao, Jiaming Xing