Patents by Inventor Dyson H. Tai

Dyson H. Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9748308
    Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: August 29, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Dyson H. Tai, Jin Li, Chen-Wei Lu, Howard E. Rhodes
  • Patent number: 9735196
    Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: August 15, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Publication number: 20170213863
    Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.
    Type: Application
    Filed: August 17, 2016
    Publication date: July 27, 2017
    Inventors: Yin Qian, Ming Zhang, Chen-Wei Lu, Jin Li, Chia-Chun Miao, Dyson H. Tai
  • Publication number: 20170162621
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor layer, a first isolation layer, and a dielectric filler. The dielectric filler is disposed in a trench in the first isolation layer, and the first isolation layer is disposed between the semiconductor layer and the dielectric filler. At least one additional isolation layer is disposed proximate to the first isolation layer, and a plurality of light channels in the at least one additional isolation layer extend through the at least one additional isolation layer to the dielectric filler. The plurality of light channels is disposed to direct light into the plurality of photodiodes.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 8, 2017
    Inventors: Yin Qian, Dyson H. Tai, Chia-Chun Miao, Chen-Wei Lu
  • Patent number: 9674493
    Abstract: An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality of pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: June 6, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jin Li, Yin Qian, Gang Chen, Dyson H. Tai
  • Publication number: 20170110608
    Abstract: A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.
    Type: Application
    Filed: October 14, 2015
    Publication date: April 20, 2017
    Inventors: Dajiang Yang, Gang Chen, Duli Mao, Dyson H. Tai
  • Patent number: 9608023
    Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. A light blocking layer is disposed in recessed regions of the transparent shield, and the recessed regions are disposed on an illuminated side of the transparent shield. The light blocking layer is disposed to prevent light from reflecting off edges of the transparent shield into the image sensor.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: March 28, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chia-Chun Miao, Yin Qian, Chao-Hung Lin, Chen-Wei Lu, Dyson H. Tai, Ming Zhang, Jin Li
  • Patent number: 9590005
    Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: March 7, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Ming Zhang, Chen-Wei Lu, Jin Li, Chia-Chun Miao, Dyson H. Tai
  • Patent number: 9565405
    Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 7, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Dominic Massetti, Chih-Wei Hsiung, Arvind Kumar, Yuanwei Zheng, Duli Mao, Dyson H. Tai
  • Publication number: 20170025468
    Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.
    Type: Application
    Filed: October 5, 2016
    Publication date: January 26, 2017
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Publication number: 20170006266
    Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.
    Type: Application
    Filed: September 15, 2016
    Publication date: January 5, 2017
    Inventors: Chen-Wei Lu, Jin Li, Yin Qian, Dyson H. Tai
  • Publication number: 20160372507
    Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.
    Type: Application
    Filed: June 18, 2015
    Publication date: December 22, 2016
    Inventors: Dajiang Yang, Gang Chen, Oray Orkun Cellek, Zhenhong Fu, Chen-Wei Lu, Duli Mao, Dyson H. Tai
  • Patent number: 9496304
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: November 15, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai
  • Patent number: 9490282
    Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: November 8, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Patent number: 9479745
    Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: October 25, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chen-Wei Lu, Jin Li, Yin Qian, Dyson H. Tai
  • Patent number: 9472587
    Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: October 18, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Xianmin Yi, Gang Chen, Duli Mao, Dyson H. Tai
  • Patent number: 9455291
    Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: September 27, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Duli Mao, Yuanwei Zheng, Chih-Wei Hsiung, Arvind Kumar, Dyson H. Tai
  • Publication number: 20160276380
    Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.
    Type: Application
    Filed: March 19, 2015
    Publication date: September 22, 2016
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Publication number: 20160268333
    Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.
    Type: Application
    Filed: May 26, 2016
    Publication date: September 15, 2016
    Inventors: Yin Qian, Dyson H. Tai, Jin Li, Chen-Wei Lu, Howard E. Rhodes
  • Patent number: 9419044
    Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: August 16, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dajiang Yang, Gang Chen, Zhenhong Fu, Duli Mao, Eric A. G. Webster, Sing-Chung Hu, Dyson H. Tai