Abstract: An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors.

Abstract: A method for fabricating a signal-separating CFA includes forming a multi-height CFA on a substrate. The multi-height CFA includes a plurality of tall spectral filters and a plurality of short spectral filters. Each of the tall spectral filters is taller than each of the short spectral filters. The method also includes disposing a spectral-blocking layer on the multi-height CFA, and planarizing the spectral-blocking layer to expose a top surface of each of the plurality of tall spectral filters.

Abstract: A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

Abstract: A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

Abstract: A method for fabricating a sealed-sidewall device die may include filling grooves of a deeply-grooved device wafer with a sealant, yielding a sealed grooved device wafer. The method may also include forming grooves in a device wafer to yield the deeply-grooved device wafer. The step of forming grooves may include forming a groove that at least partially penetrates each layer of the device wafer. The method may further include masking each device of the deeply-grooved device wafer. A sealed-sidewall device die may include at least one layer including a device substrate layer, a sidewall including a respective surface of each layer of the at least one layer, a sidewall sealant covering the sidewall, and a device formed on the device substrate layer. The sidewall sealant optionally does not cover a top surface of the device. The top surface of the device may directly adjoin an ambient medium thereabove.

Abstract: A method for fabricating a sealed-sidewall device die may include filling grooves of a deeply-grooved device wafer with a sealant, yielding a sealed grooved device wafer. The method may also include forming grooves in a device wafer to yield the deeply-grooved device wafer. The step of forming grooves may include forming a groove that at least partially penetrates each layer of the device wafer. The method may further include masking each device of the deeply-grooved device wafer. A sealed-sidewall device die may include at least one layer including a device substrate layer, a sidewall including a respective surface of each layer of the at least one layer, a sidewall sealant covering the sidewall, and a device formed on the device substrate layer. The sidewall sealant optionally does not cover a top surface of the device. The top surface of the device may directly adjoin an ambient medium thereabove.

Abstract: A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

Abstract: A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal.

Abstract: An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors.

Abstract: A color photosensor array has photosensors of a first type having a thick overlying silicon layer, photosensors of a second type having a thin overlying silicon layer, and photosensors of a third type having no overlying silicon layer; the photosensors of the first type having peak sensitivity in the red, the photosensors of the second type having peak sensitivity in the green. In particular embodiments, color correction circuitry is provided to enhance color saturation.