Patents by Inventor Eberhard A. Spiller

Eberhard A. Spiller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7672430
    Abstract: A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: March 2, 2010
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Henry N. Chapman, Sasa Bajt, Eberhard A. Spiller, Stefan Hau-Riege, Stefano Marchesini
  • Publication number: 20090116619
    Abstract: A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.
    Type: Application
    Filed: May 15, 2008
    Publication date: May 7, 2009
    Inventors: Henry N. Chapman, Sasa Bajt, Eberhard A. Spiller, Stefan Hau-Riege, Stefano Marchesini
  • Publication number: 20050118533
    Abstract: Ion-beam based deposition technique are provided for the planarization of pit and scratch defects in conjunction with particle defects. One application of this planarization technique is to mitigate the effects of pits and scratches and particles on reticles for extreme ultraviolet (EUV) lithography. In the planarization process, thin Si layers are successively deposited and etched away where the etching is directed at angles well away from normal incidence to the substrate to planarize pits and scratches without causing the particle defects to get too large; this is followed by a normal incidence etching process sequence designed primarily to planarize the particles but which will also planarize the pits and scratches to completion. The process also shows significant promise for planarizing substrate roughness.
    Type: Application
    Filed: October 12, 2004
    Publication date: June 2, 2005
    Inventors: Paul Mirkarimi, Sherry Baker, Daniel Stearns, Eberhard Spiller
  • Patent number: 6849859
    Abstract: The figure of a substrate is very precisely measured and a figured-correcting layer is provided on the substrate. The thickness of the figure-correcting layer is locally measured and compared to the first measurement. The local measurement of the figure-correcting layer is accomplished through a variety of methods, including interferometry and fluorescence or ultrasound measurements. Adjustments in the thickness of the figure-correcting layer are made until the top of the figure-correcting layer matches a desired figure specification.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: February 1, 2005
    Assignee: Euv Limited Liability Corporation
    Inventors: James A. Folta, Eberhard Spiller
  • Patent number: 6780496
    Abstract: A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B4C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B4C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.
    Type: Grant
    Filed: February 1, 2002
    Date of Patent: August 24, 2004
    Assignee: EUV LLC
    Inventors: Sasa Bajt, James A. Folta, Eberhard A. Spiller
  • Patent number: 6634760
    Abstract: Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 Å and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: October 21, 2003
    Assignee: The Regents of the University of California
    Inventors: James A. Folta, Claude Montcalm, John S. Taylor, Eberhard A. Spiller
  • Publication number: 20030164998
    Abstract: An ion-assisted deposition technique to provide planarization of topological defects, e.g., to mitigate the effects of small particle contaminants on reticles for extreme ultraviolet (EUV) lithography. Reticles for EUV lithography will be fabricated by depositing high EUV reflectance Mo/Si multilayer films on superpolished substrates and topological substrate defects can nucleate unacceptable (“critical”) defects in the reflective Mo/Si coatings. A secondary ion source is used to etch the Si layers in between etch steps to produce topological defects with heights that are harmless to the lithographic process.
    Type: Application
    Filed: March 1, 2002
    Publication date: September 4, 2003
    Applicant: The Regents of the University of California
    Inventors: Paul B. Mirkarimi, Eberhard A. Spiller, Daniel G. Stearns
  • Publication number: 20030043483
    Abstract: Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 Å and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.
    Type: Application
    Filed: August 27, 2001
    Publication date: March 6, 2003
    Applicant: The Regents of The University of California
    Inventors: James A. Folta, Claude Montcalm, John S. Taylor, Eberhard A. Spiller
  • Publication number: 20030008148
    Abstract: A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B4C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B4C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.
    Type: Application
    Filed: July 3, 2001
    Publication date: January 9, 2003
    Inventors: Sasa Bajt, James A. Folta, Eberhard Spiller
  • Publication number: 20030008180
    Abstract: A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B4C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B4C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.
    Type: Application
    Filed: February 1, 2002
    Publication date: January 9, 2003
    Applicant: The Regents of the University of California
    Inventors: Sasa Bajt, James A. Folta, Eberhard A. Spiller
  • Publication number: 20020135778
    Abstract: The figure of a substrate is very precisely measured and a figured-correcting layer is provided on the substrate. The thickness of the figure-correcting layer is locally measured and compared to the first measurement. The local measurement of the figure-correcting layer is accomplished through a variety of methods, including interferometry and fluorescence or ultrasound measurements. Adjustments in the thickness of the figure-correcting layer are made until the top of the figure-correcting layer matches a desired figure specification.
    Type: Application
    Filed: March 21, 2001
    Publication date: September 26, 2002
    Applicant: The Regents of the University of California
    Inventors: James A. Folta, Eberhard Spiller
  • Patent number: 6134049
    Abstract: Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system.
    Type: Grant
    Filed: September 25, 1998
    Date of Patent: October 17, 2000
    Assignee: The Regents of the University of California
    Inventors: Eberhard A. Spiller, Paul B. Mirkarimi, Claude Montcalm, Sasa Bajt, James A. Folta
  • Patent number: 5958143
    Abstract: A cleaning process for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.
    Type: Grant
    Filed: April 28, 1998
    Date of Patent: September 28, 1999
    Assignee: The Regents of the University of California
    Inventors: Frank J. Weber, Eberhard A. Spiller
  • Patent number: 4595261
    Abstract: A phase retardation element, for use in an optical data storage system, which provides a 90.degree. phase difference between two perpendicular polarized components of an incident wave with a single internal reflection from a surface coated with a thin film of dielectric or metal material.
    Type: Grant
    Filed: October 13, 1983
    Date of Patent: June 17, 1986
    Assignee: International Business Machines Corporation
    Inventors: Holger J. Baasch, Douglas S. Goodman, Francis S. Luecke, Ronald L. Soderstrom, Eberhard A. Spiller
  • Patent number: 4268952
    Abstract: A method is disclosed for fabricating structures having electrically conductive regions such as high resolution semiconductor device and circuit designs which require only low resolution alignment steps during fabrication. The method is used to fabricate metal semiconductor field effect transistors (MESFET) and metal oxide semiconductor field effect transistors (MOSFET) devices and incorporates the following features. A device with very small (i.e. submicron) dimensions is positioned in a relatively large device well such that the exact position of the device in its well is not critical. Isolation and interconnection of devices in different wells is achieved by standard masking and alignment techniques with a resolution corresponding to the larger dimensions of the device wells.
    Type: Grant
    Filed: April 9, 1979
    Date of Patent: May 26, 1981
    Assignee: International Business Machines Corporation
    Inventors: Fritz H. Gaensslen, Eberhard A. Spiller
  • Patent number: 4018938
    Abstract: A method of constructing masks characterized by a high aspect ratio. The method includes at least a single exposure of a mask by radiation which is transmitted by the substrate before impinging on the resist. In a specific embodiment the mask is partially completed and the already deposited mask modulates the radiation transmitted by the substrate before it exposes the resist.
    Type: Grant
    Filed: June 30, 1975
    Date of Patent: April 19, 1977
    Assignee: International Business Machines Corporation
    Inventors: Ralph Feder, Eberhard A. Spiller
  • Patent number: 3984582
    Abstract: A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.
    Type: Grant
    Filed: June 30, 1975
    Date of Patent: October 5, 1976
    Assignee: IBM
    Inventors: Ralph Feder, Ivan Haller, Michael Hatzakis, Lubomyr T. Romankiw, Eberhard A. Spiller