Abstract: In a microwave hybrid integrated circuit a metallized recess (8) is formed on the back or face side of a board (1) of the metallization of which recess serves as a bottom plate (6) of a capacitor (5), a remaining portion (9) of the board (1) under the recess (8) serves as the dielectric of the capacitor (5), and a top plate (7) thereof is situated on the face side of the board (1) and makes part of a topological metallization pattern (2), the remaining portion of the thickness of the board (1) in the recess (8) being of 1 to 400 &mgr;m.

Abstract: In a high-power microwave hybrid integrated circuit comprising package-free semiconductor devices 5 with contact pads, a dielectric substrate 1 containing holes 3 and a topological pattern on its front side and a shielding metallization 2 on its opposite side, a metallic header 4 with projections 6 adjoining the shielding metallization 2 of the dielectric substrate 1 and passing through the holes 3 thereof, said semiconductor devices 5 being mounted on the projections 6 of the header 4 such that their surfaces with the contact pads flush level with a front side of the dielectric substrate 1, a part of said contact pads being connected to the topological pattern of the metallization and a part thereof being connected to the projections 6 of the header 4, the improvements consisting in that the metallic header 4 is provided with holes 3 where its projections 6 are mounted, said projections 6 being fabricated in the form of inserts rigidly secured in said holes 3 and made of material with a thermal conductivity

Abstract: In a power microwave hybrid integrated circuit, a recess (10) is formed on the back side of a board (5) under a projection (2) of a base (1), the recess (10) having holes (11) of a definite size in the bottom thereof, while the upper portion of the projection (2) of the base (1) not occupied with a chip (3) is electrically connected to the bottom of the recess (10), a grounding of a portion of bonding pads (4) of the chip (3) being performed through the holes (11) in the bottom of the recess (10), the spacing between the chip (3) and the walls of a hole (8) for mounting the chip (3) being less than 150 .mu.m and the grounding hole (11) being less than 150 .mu.m.

Abstract: The microwave hybrid integrated circuit comprises a dielectric board (1) provided with a topological metallization pattern (2) on its face side, a shield grounding metallization (3) on the back side thereof, a hole (4), and a metal base (5) having a projection (6). The hole (4) in the board (1) has a constriction (9) situated at a height of 1 to 300 .mu.m from the face surface of the board (1). The projection (6) is located in a wide section (10) of the hole (4). Bonding pads (8) of a chip (7) which are to be grounded are electrically connected to the projection (6) through the constricted portion (9) of the hole (4) which is filled with an electrically and heat conducting material (11). The wide section (10) of the hole (4) is from 0.2.times.0.2 mm to the size of the chip (7), and the distance between the side walls of the projection (6) and the side walls of the wide section (10) of the hole (4) is 0.001 to 1.0 mm.