Patents by Inventor Edward L. Griffin

Edward L. Griffin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6559513
    Abstract: A planar MESFET transistor includes a plurality of FET elements. Each FET element includes a doped planar channel, and source and drain coupled to the ends of the channel. A gate conductor extends over a portion of the channel at a location lying between the source and drain, a first predetermined distance from the drain. A field plate is connected to the gate conductor, and extends toward the drain a second predetermined distance, isolated from the channel except at its gate conductor connection by a dielectric material.
    Type: Grant
    Filed: April 22, 2002
    Date of Patent: May 6, 2003
    Assignee: M/A-Com, Inc.
    Inventors: Dain Curtis Miller, Inder J. Bahl, Edward L. Griffin
  • Patent number: 6236070
    Abstract: Disclosed is an improved field effect transistor (FET) employing both a metal-semiconductor (MES) gate and a metal-insulator-semiconductor (MIS) gate, which FET is particularly useful to provide amplification at microwave frequencies. The use of the MIS gate with appropriate biasing allows the carrier density within a selected portion of the device's channel region to be controlled. The carrier density control increases the breakdown voltage of the FET and enables the FET to be operated with higher maximum channel current and a higher drain to source voltage. As a result, higher output power is provided as compared to prior art MESFET devices of a similar size. Also disclosed is an amplifier circuit including the MES/MIS FET of the preset invention, which amplifier circuit further includes means coupled to the MES/MIS FET for dividing a high frequency input signal to provide a first divided portion and a second divided portion.
    Type: Grant
    Filed: September 7, 1999
    Date of Patent: May 22, 2001
    Assignee: Tyco Electronics Logistics AG
    Inventors: Edward L. Griffin, Dain Curtis Miller, Inder J. Bahl
  • Patent number: 6005267
    Abstract: Disclosed is an improved field effect transistor (FET) employing both a metal-semiconductor (MES) gate and a metal-insulator-semiconductor (MIS) gate, which FET is particularly useful to provide amplification at microwave frequencies. The use of the MIS gate with appropriate biasing allows the carrier density within a selected portion of the device's channel region to be controlled. The carrier density control increases the breakdown voltage of the FET and enables the FET to be operated with higher maximum channel current and a higher drain to source voltage. As a result, higher output power is provided as compared to prior art MESFET devices of a similar size. Also disclosed is an amplifier circuit including the MES/MIS FET of the present invention, which amplifier circuit further includes means coupled to the MES/MIS FET for dividing a high frequency input signal to provide a first divided portion and a second divided portion.
    Type: Grant
    Filed: July 7, 1997
    Date of Patent: December 21, 1999
    Assignee: ITT Corporation
    Inventors: Edward L. Griffin, Dain Curtis Miller, Inder J. Bahl
  • Patent number: 5965935
    Abstract: A microstrip line device is disclosed of the type which typically includes a strip conductor disposed on the top of a substrate. The device further includes a layer of dielectric material disposed between the strip conductor and the substrate for reducing the dissipation loss in these devices. In order to accomplish this, the dielectric layer has a dielectric constant which is less than the dielectric constant of the substrate.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: October 12, 1999
    Assignee: ITT Industries, Inc.
    Inventors: Inder J. Bahl, Edward L. Griffin
  • Patent number: 5753968
    Abstract: A microstrip line device is disclosed of the type which typically includes a strip conductor disposed on the top of a substrate. The device further includes a layer of dielectric material disposed between the strip conductor and the substrate for reducing the dissipation loss in these devices. In order to accomplish this, the dielectric layer has a dielectric constant which is less than the dielectric constant of the substrate.
    Type: Grant
    Filed: August 5, 1996
    Date of Patent: May 19, 1998
    Assignee: ITT Industries, Inc.
    Inventors: Inder J. Bahl, Edward L. Griffin
  • Patent number: 5172072
    Abstract: A high efficiency harmonic injection power amplifier has a power amplifier circuit, and at least a second-harmonic termination circuit which is coupled in parallel with the power amplifier circuit so to sample a small portion of the input signal and to inject into the power output signal an amplified harmonic signal which is phase-shifted for proper harmonic termination. The second-harmonic termination circuit includes a frequency multiplier for multiplying the frequency of the sampled input signal to twice the fundamental frequency, i.e., to 2f.sub.o, an amplifier for amplifying the 2f.sub.o signal to the level of the corresponding harmonic component of the power amplifier output signal, and a phase shifter for shifting the phase of the second-harmonic signal for proper harmonic termination. Additional harmonic termination circuits may be provided for terminating third- and higher-order harmonics.
    Type: Grant
    Filed: September 6, 1991
    Date of Patent: December 15, 1992
    Assignee: ITT Corporation
    Inventors: David A. Willems, Edward L. Griffin, Inder J. Bahl, Michael D. Pollman
  • Patent number: 4956308
    Abstract: A self-aligned gate (SAG) transistor or FET is described which transistor overcomes several disadvantages of the prior art for making SAG field-effect transistors. The disadvantages noted above result from the fact that current SAG FET's have a symmetrical structure, with n+ regions on either side of the gate electrode. This invention provides a means of masking off a region on the drain side of the gate electrode before performing an n+ implant, so that the n+ implanted region is asymmetrical on the two sides of the gate electrode. This has the desired beneficial effect of reducing the parasitic source resistance, without the deleterious effects on gate-drain breakdown voltage, gate-drain capacitance, and output resistance that invariably accompany a high doping level on the drain side of the gate. Using this technique, substantially increased performance can be obtained from a self-aligned FET.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: September 11, 1990
    Assignee: ITT Corporation
    Inventors: Edward L. Griffin, Robert A. Sadler, Arthur E. Geissberger
  • Patent number: 4701573
    Abstract: A semiconductor chip housing provides hermetic sealing and appropriate electrical characteristics for use at high frequencies. The housing comprises a substrate in which the chip is mounted and a cylindrical tube having a top cover and extending above the substrate which impinges on a base and thus hermetically seals the chip. Microthin leads extend from the substrate periphery to the chip. The leads carrying high frequency signals have notches therein to compensate for the impedance introduced by the tube and to enable the microstrip to present a constant impedance at high frequencies throughout its length.
    Type: Grant
    Filed: September 26, 1985
    Date of Patent: October 20, 1987
    Assignee: ITT Gallium Arsenide Technology Center
    Inventors: Inder J. Bahl, Edward L. Griffin
  • Patent number: 4647878
    Abstract: A substrate for mounting electronic devices is provided with a capacitive coupler as an interconnecting means. The coupler comprises two partially co-extensive conductors surrounded by a shield. The substrate is made from a plurality of superimposed layers, each layer consisting of a dielectric, or a conductive material, or strips of conductive material separated by the dielectric to form a preselected profile.
    Type: Grant
    Filed: November 14, 1984
    Date of Patent: March 3, 1987
    Assignee: ITT Corporation
    Inventors: Richard C. Landis, Edward L. Griffin, Inder G. Bahl
  • Patent number: 4488131
    Abstract: An electromagnetic filter assembly comprises a transmission line electromagnetically coupled to a dual mode resonator having a means for differentially tuning the two modes. The filter may be incorporated in a microwave integrated circuit, and the tuning means may be a movable dielectric slab asymmetrically disposed on the resonator.
    Type: Grant
    Filed: February 25, 1983
    Date of Patent: December 11, 1984
    Assignee: Hughes Aircraft Company
    Inventors: Edward L. Griffin, Harvey M. Endler, Frederick A. Young
  • Patent number: 4410865
    Abstract: A tri-mode spherical cavity microwave filter comprising two tandemly disposed generally spherical bodies each of which defines a spherical cavity which supports three identical, mutually orthogonal modes of electromagnetic energy, a cavity coupling aperture connecting the cavities, a plurality of cavity tuning holes, and a plurality of coupling tuning holes. One of the spherical cavities has an input aperture, and another has an output aperture. The cavity tuning holes and coupling tuning holes are adapted to receive cavity tuners and coupling tuners, respectively.
    Type: Grant
    Filed: February 24, 1982
    Date of Patent: October 18, 1983
    Assignee: Hughes Aircraft Company
    Inventors: Frederick A. Young, Edward L. Griffin
  • Patent number: 4291288
    Abstract: A folded end-coupled general response TE.sub.011 filter is herein described which achieves all bridge couplings necessary for general bandpass response in a particularly convenient two-tier overlapping structure, where all couplings are made in a single removable iris, and where probe and/or slot couplings are used to achieve coupling of either sign.
    Type: Grant
    Filed: December 10, 1979
    Date of Patent: September 22, 1981
    Assignee: Hughes Aircraft Company
    Inventors: Frederick A. Young, Edward L. Griffin, Louis W. Hendrick
  • Patent number: 4291287
    Abstract: There are herein described evanescent mode filters each of which include a hollow waveguide, wherein a plurality of resonators are disposed, the resonators including loading structures such as tuning screws, for example, wherein at least one of the loading structures is angularly disposed, relative to the axis of the waveguide, with respect to others of the loading structures to reduce the length of the filter and/or to provide internal bridge couplings.
    Type: Grant
    Filed: December 10, 1979
    Date of Patent: September 22, 1981
    Assignee: Hughes Aircraft Company
    Inventors: Frederick A. Young, Edward L. Griffin
  • Patent number: 4262269
    Abstract: An active microwave filter for use in both bandpass and notch filter applications is herein described, the filter incorporating a distributed resonator to which is coupled an amplifier which provides a positive feedback and cancels the net dissipation in the resonator.
    Type: Grant
    Filed: December 10, 1979
    Date of Patent: April 14, 1981
    Assignee: Hughes Aircraft Company
    Inventors: Edward L. Griffin, Frederick A. Young, Harvey M. Endler
  • Patent number: 4241323
    Abstract: A waveguide filter is herein described that employs a resonator ordering which allows a direct realization of all canonical couplings while retaining the advantages of a standard dual mode filter, the filter including a reflective plate in one end cavity and both input and output ports in the other end cavity, where one of the ports is a shunt port in a sidewall of the cavity structure and the other port is a coupling slot in the outer end wall.
    Type: Grant
    Filed: July 5, 1979
    Date of Patent: December 23, 1980
    Assignee: Hughes Aircraft Company
    Inventors: Edward L. Griffin, Frederick A. Young