Patents by Inventor Edward Sargent

Edward Sargent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9196781
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: November 24, 2015
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Publication number: 20150168337
    Abstract: Nanostructured microelectrodes and biosensing devices incorporating the same are disclosed herein.
    Type: Application
    Filed: October 14, 2014
    Publication date: June 18, 2015
    Inventors: Leyla Soleymani, Zhichao Fang, Shana Kelley, Edward Sargent, Bradford Taft
  • Patent number: 8888969
    Abstract: Nanostructured microelectrodes and biosensing devices incorporating the same are disclosed herein.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: November 18, 2014
    Assignee: The Governing Council of the University of Toronto
    Inventors: Leyla Soleymani, Zhichao Fang, Shana Kelley, Edward Sargent, Bradford Taft
  • Publication number: 20140175591
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Application
    Filed: October 7, 2013
    Publication date: June 26, 2014
    Applicant: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8643064
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: February 4, 2014
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8558286
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: October 15, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8546853
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 12, 2011
    Date of Patent: October 1, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Publication number: 20130244366
    Abstract: The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer.
    Type: Application
    Filed: May 6, 2013
    Publication date: September 19, 2013
    Applicant: InVisage Technologies, Inc.
    Inventors: Edward Sargent, Steven Ashworth McDonald, Shiguo Zhang, Larissa Levina, Gerasimos Konstantatos, Paul Cyr
  • Patent number: 8530992
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: September 10, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8530940
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: September 10, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8530993
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: September 10, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8530991
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: September 10, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8525287
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: September 3, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8513758
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: August 20, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8482093
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: July 9, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8476727
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: July 2, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8466533
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: June 18, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8450138
    Abstract: Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: May 28, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Edward Sargent, Steven Ashworth McDonald, Shiguo Zhang, Larissa Levina, Gerasimos Konstantatos, Paul Cyr
  • Patent number: 8441090
    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: May 14, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Hui Tian, Edward Sargent
  • Patent number: 8422266
    Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: April 16, 2013
    Assignee: InVisage Technologies, Inc.
    Inventors: Edward Sargent, Jason Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina