Abstract: A vacuum processing apparatus includes: a plurality of carriers to be mounted with a base member; a circulation path which is kept in a controlled atmosphere and through which the carriers circulate; a plurality of base member loading and unloading chambers which are disposed in the circulation path and which load and unload the base member to and from the carriers; and a plurality of vacuum processing chambers which are disposed between the base member loading and unloading chambers in the circulation path for performing a vacuum process on the base member.

Abstract: A method for manufacturing a plasma display panel in which an electrical discharge gas is introduced into a space between a first substrate and a second substrate which are sealed together, the method including: a first deaeration step of releasing impurity gases from a protective film by heating the first substrate, on which the protective film is formed for withstanding plasma electrical discharge, to 280° C. or more in a vacuum or in a controlled atmosphere; and a sealing step of sealing the front substrate, in which the impurity gases have been released from the protective film, and a rear substrate which are placed in contact with each other.

Abstract: A method for manufacturing a sealed panel having a first substrate and a second substrate, including: a melting step of melting a sealing material which does not contain a binder for making the sealing material into paste form; a coating step of applying the melted sealing material onto a surface of the second substrate; and a sealing step of laminating the first substrate and the second substrate via the sealing material applied onto the surface of the second substrate.

Abstract: [Object] In the control of electron beam focusing of a pierce-type electron gun, any influences from the space charge effect and space charge neutralizing action within the electron gun are eliminated to attain complete control of an electron beam. [Solving Means] Feedback control of the pressure within the electron gun is performed by directly measuring temperature at an internal of the pierce-type electron gun. It is desirable that locations where the direct measurement of the temperature at the internal of the electron gun is performed are an anode (39) and a flow register (43). Further, the direct measurement can be performed at any one of a ring, an aperture and an exhaust pipe provided at an outlet or an inlet of any one of a cathode chamber (31), an intermediate chamber, and a scanning chamber (33).

Abstract: A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time 0 to t2). Next, the object to be processed is moved to the buffer chamber, and the pressure inside the buffer chamber is lowered to near the pressure of the processing chamber (time t2 to t3), then the buffer chamber and the processing chamber are connected, and the object to be processed is transferred into the processing chamber.

Abstract: Even when a gate valve for a vacuum apparatus used in a vapor deposition apparatus is in an open position, reliability of keeping a vapor deposition chamber vacuum can be improved by protecting an inner wall surface of a valve casing and a sealing member of a valve body against a vapor of a vapor deposition material. A gate valve (1) for a vacuum apparatus (50) is used as a gate valve for an electron gun (52). When the valve is in a closed position, as with the related art technique, a valve body (3) detaches an electron gun (52) part from a vapor deposition chamber (51).

Abstract: A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time 0 to t2). Next, the object to be processed is moved to the buffer chamber, and the pressure inside the buffer chamber is lowered to near the pressure of the processing chamber (time t2 to t3), then the buffer chamber and the processing chamber are connected, and the object to be processed is transferred into the processing chamber.

Abstract: A method for manufacturing a plasma display panel in which an electrical discharge gas is introduced into a space between a first substrate and a second substrate which are sealed together, the method including: a first deaeration step of releasing impurity gases from a protective film by heating the first substrate, on which the protective film is formed for withstanding plasma electrical discharge, to 280° C. or more in a vacuum or in a controlled atmosphere; and a sealing step of sealing the front substrate, in which the impurity gases have been released from the protective film, and a rear substrate which are placed in contact with each other.

Abstract: A method for manufacturing a sealed panel having a first substrate and a second substrate, including: a melting step of melting a sealing material which does not contain a binder for making the sealing material into paste form; a coating step of applying the melted sealing material onto a surface of the second substrate; and a sealing step of laminating the first substrate and the second substrate via the sealing material applied onto the surface of the second substrate.

Abstract: A vacuum treatment apparatus is provided with a plurality of carriers whereupon a base material is mounted; a circulation path which is held in a controlled atmosphere and permits the carriers to circulate therein; a plurality of base material exit/entrance chambers arranged in the circulation path for loading and taking out the base material on and from the carriers; and vacuum treatment chambers which are arranged between the base material exit/entrance chambers in the circulation path and perform vacuum treatment to the base material.

Abstract: [Object] In the control of electron beam focusing of a pierce-type electron gun, any influences from the space charge effect and space charge neutralizing action within the electron gun are eliminated to attain complete control of an electron beam. [Solving Means] Feedback control of the pressure within the electron gun is performed by directly measuring temperature at an internal of the pierce-type electron gun. It is desirable that locations where the direct measurement of the temperature at the internal of the electron gun is performed are an anode (39) and a flow register (43). Further, the direct measurement can be performed at any one of a ring, an aperture and an exhaust pipe provided at an outlet or an inlet of any one of a cathode chamber (31), an intermediate chamber, and a scanning chamber (33).

Abstract: Even when a gate valve for a vacuum apparatus used in a vapor deposition apparatus is in an open position, reliability of keeping a vapor deposition chamber vacuum can be improved by protecting an inner wall surface of a valve casing and a sealing member of a valve body against a vapor of a vapor deposition material. A gate valve (1) for a vacuum apparatus (50) is used as a gate valve for an electron gun (52). When the valve is in a closed position, as with the related art technique, a valve body (3) detaches an electron gun (52) part from a vapor deposition chamber (51).