Abstract: According to one embodiment, a voltage regulator circuit includes a first regulator, and a second regulator. The first regulator includes a first transistor of a first conductive type, which outputs a second voltage that is generated from a first voltage and lower than the first voltage to an output node. The first regulator is usually operated. The second regulator includes a second transistor of a second conductive type, which outputs the second voltage generated from the first voltage to the output node. The second transistor is operated in a weak inversion region when data is input or output.

Abstract: A semiconductor integrated circuit device includes a memory cell array including a plurality of planes each including a plurality of memory cells, a power supply voltage generating circuit including a voltage generating circuit configured to generate a power supply voltage common to the plurality of planes, a select number detection circuit configured to detect a number of selected planes of the plurality of planes, and a resistance variable circuit configured to vary a wiring resistance between the plurality of planes and the voltage generating circuit in accordance with the number of selected planes, which is reported from the select number detection circuit, and a control circuit configured to control the power supply voltage generating circuit.

Abstract: A semiconductor integrated circuit device includes a first component, a second component, a plurality of first, second and third contacts, and a plurality of signal lines having a plurality of first wires, and connecting the first and second component, each of the first wires having a first, second, third and fourth part, each of the parts having a resistivity, the second part having a first resistivity, a different value of the first resistance being set for each of the plurality of first wires, the first, third and fourth parts having a second or third resistivity which is lower than the first resistivity, the first and second part being electrically connected in series by the first contact, the second and third part being electrically connected in series by the second contact, and the third and fourth part being electrically connected in series by the third contact.

Abstract: A semiconductor integrated circuit device includes a memory cell array including a plurality of planes each including a plurality of memory cells, a power supply voltage generating circuit including a voltage generating circuit configured to generate a power supply voltage common to the plurality of planes, a select number detection circuit configured to detect a number of selected planes of the plurality of planes, and a resistance variable circuit configured to vary a wiring resistance between the plurality of planes and the voltage generating circuit in accordance with the number of selected planes, which is reported from the select number detection circuit, and a control circuit configured to control the power supply voltage generating circuit.

Abstract: A semiconductor integrated circuit includes a memory cell array including a plurality of planes each including a plurality of memory cells, a power supply voltage generating circuit including a common voltage generating circuit which maintains a fixed voltage supply capability, and a plurality of voltage generating circuits which are disposed in accordance with a number of the plurality of planes, and a control circuit configured to control the power supply voltage generating circuit.

Abstract: A semiconductor device including a circuit substrate including n number of terminals; a semiconductor chip provided on the circuit substrate and including n number of terminals; and a relay chip including a triangular substrate having a first side, a second side and a third side which form triangle, n number of first terminals located along the first side, n number of second terminals located along the second side, and a plurality of wires connecting the first terminals and the second terminals respectively; a first wire connecting each of the n number of terminals of the circuit substrate to a corresponding first terminal among the n number of first terminals; and a second wire connecting each of the n number of terminals of the semiconductor chip to a corresponding second terminal among the n number of second terminals.

Abstract: A semiconductor integrated circuit device includes a first component, a second component, a plurality of first, second and third contacts, and a plurality of signal lines having a plurality of first wires, and connecting the first and second component, each of the first wires having a first, second, third and fourth part, each of the parts having a resistivity, the second part having a first resistivity, a different value of the first resistance being set for each of the plurality of first wires, the first, third and fourth parts having a second or third resistivity which is lower than the first resistivity, the first and second part being electrically connected in series by the first contact, the second and third part being electrically connected in series by the second contact, and the third and fourth part being electrically connected in series by the third contact.

Abstract: This disclosure concerns a device outputting data to the outside comprising a first transistor with a first conductive type which is connected between an output low voltage corresponding to a first logical value and the pad and which connects the output low voltage to the pad when the digital data has the first logical value; a second transistor with a second conductive type which is connected between an output high voltage corresponding to a second logical value and the pad and which connects the output high voltage to the pad when the digital data has the second logical value; and a third transistor with the first conductive type which is connected between the output high voltage and the pad so as to be parallel to the second transistor and which connects the output high voltage to the pad when the digital data has the second logical value.

Abstract: A nonvolatile semiconductor device includes a plurality of word lines, a plurality of bit lines, a plurality of memory cell arrays having a plurality of electrically reprogrammable memory cells which are connected to said word lines and said bit lines, a data program control section which programs a plurality of first multi-bits data each having a first number of bits, or a plurality of second multi-bits data each having a second number of bits twice that of said first multi-bits data, to said plurality of memory cell arrays, a page buffer circuit which stores said plurality of first multi-bits data or said plurality of second multi-bits data which is read for each of said word lines from said plurality of memory cell arrays, a data transfer section which transfers said plurality of first multi-bits data or said plurality of second multi-bits data which is read for each of said second number of bits from said page buffer circuit synchronized with a second clock signal having a cycle which is twice that of a f

Abstract: A nonvolatile semiconductor device includes a plurality of word lines, a plurality of bit lines, a plurality of memory cell arrays having a plurality of electrically reprogrammable memory cells which are connected to said word lines and said bit lines, a data program control section which programs a plurality of first multi-bits data each having a first number of bits, or a plurality of second multi-bits data each having a second number of bits twice that of said first multi-bits data, to said plurality of memory cell arrays, a page buffer circuit which stores said plurality of first multi-bits data or said plurality of second multi-bits data which is read for each of said word lines from said plurality of memory cell arrays, a data transfer section which transfers said plurality of first multi-bits data or said plurality of second multi-bits data which is read for each of said second number of bits from said page buffer circuit synchronized with a second clock signal having a cycle which is twice that of a f

Abstract: This disclosure concerns a device outputting data to the outside comprising a first transistor with a first conductive type which is connected between an output low voltage corresponding to a first logical value and the pad and which connects the output low voltage to the pad when the digital data has the first logical value; a second transistor with a second conductive type which is connected between an output high voltage corresponding to a second logical value and the pad and which connects the output high voltage to the pad when the digital data has the second logical value; and a third transistor with the first conductive type which is connected between the output high voltage and the pad so as to be parallel to the second transistor and which connects the output high voltage to the pad when the digital data has the second logical value.

Abstract: A semiconductor device according to the present invention includes a substrate including a plurality of first pads thereon; at least one semiconductor chip including a plurality of second pads; and at least one wiring chip including a plurality of third pads. A part of the plurality of second pads of the semiconductor chip is electrically connected to a part of the plurality of third pads of the wiring chip, and another part of the plurality of third pads of the wiring chip is electrically connected to a part of the plurality of first pads of the substrate.

Abstract: A nonvolatile semiconductor memory device having a first memory cell array including a plurality of electrical reprogramming and erasable nonvolatile semiconductor memory cells formed in a first area of a semiconductor substrate, a second memory cell array including a plurality of electrical reprogramming and erasable nonvolatile semiconductor memory cells formed in a second area different from said first area of said semiconductor substrate, said first and second memory cell arrays being arranged in a first direction, and a first pad section for inputting data to and outputting data from said first memory cell array and said second memory cell array, said first pad section having a plurality of pads arranged between said first memory cell array and said second memory cell array along a second direction perpendicular to said first direction.

Abstract: A nonvolatile semiconductor memory device having a first memory cell array including a plurality of electrically reprogrammable and erasable nonvolatile memory cells formed in a first area of a semiconductor substrate, a second memory cell array including a plurality of electrically reprogrammable and erasable nonvolatile memory cells formed in second area different from said first area of said semiconductor substrate, said first and second memory cell arrays being arranged in a first direction, a first page buffer block for storing data from said first memory cell array, said first page buffer block being arranged in said first memory cell array along a first direction, a second page buffer block for storing data from said second memory cell array, said second page buffer block being arranged in said second memory cell array along said first direction, a pad section for inputting data to and outputting data from said first memory cell array and said second memory cell array, said pad section having a plurali

Abstract: Systems and methods for arranging parallel wires to reduce the capacitance variations. In one embodiment, multiple first components arranged as a linear array are coupled to a second component at the end of this linear array by corresponding signal wires. Each signal wire has a perpendicular portion extending perpendicular to the direction of the linear array, and a parallel portion which runs parallel to the direction of the linear array. The parallel portions are staggered so that longer ones of the parallel portions are adjacent to the shorter ones of the parallel portions, instead of simply being arranged from longest to shortest. In one embodiment, the longer half of the parallel portions decrease in length across the series of parallel portions, while the shorter half of the parallel portions increase in length. In another embodiment, successively longer/shorter parallel portions alternate sides of the series.

Abstract: Systems and methods for arranging parallel wires to reduce the capacitance variations. In one embodiment, multiple first components arranged as a linear array are coupled to a second component at the end of this linear array by corresponding signal wires. Each signal wire has a perpendicular portion extending perpendicular to the direction of the linear array, and a parallel portion which runs parallel to the direction of the linear array. The parallel portions are staggered so that longer ones of the parallel portions are adjacent to the shorter ones of the parallel portions, instead of simply being arranged from longest to shortest. In one embodiment, the longer half of the parallel portions decrease in length across the series of parallel portions, while the shorter half of the parallel portions increase in length. In another embodiment, successively longer/shorter parallel portions alternate sides of the series.

Abstract: A semiconductor device comprises a first transistor and a potential generator circuit. The first transistor has a first conduction type first semiconductor region and a second conduction type second semiconductor region formed in the first semiconductor region. The first and second semiconductor regions are supplied with first and second prescribed potentials, respectively. The potential generator circuit generates the first prescribed potential. The potential generator circuit has a first power supply terminal supplied with a first power supply potential, a second power supply terminal supplied with a second power supply potential set to a higher potential than the first power supply potential, and an output terminal outputting the first prescribed potential.

Abstract: A semiconductor device comprises a first transistor and a potential generator circuit. The first transistor has a first conduction type first semiconductor region and a second conduction type second semiconductor region formed in the first semiconductor region. The first and second semiconductor regions are supplied with first and second prescribed potentials, respectively. The potential generator circuit generates the first prescribed potential. The potential generator circuit has a first power supply terminal supplied with a first power supply potential, a second power supply terminal supplied with a second power supply potential set to a higher potential than the first power supply potential, and an output terminal outputting the first prescribed potential.

Abstract: An X-ray CT scanner having an X-ray tube for radiating X-rays to a subject, an X-ray detector for detecting X-rays that have penetrated the subject, a circular plate-like rotary member with an opening for insertion of a subject and having the X-ray tube and the X-ray detector mounted thereon at opposing positions with respect to the opening, a support for rotatably supporting the rotary member, and a rotary drive for rotating the rotary member around the subject. The X-ray tube and the X-ray detector are mounted on a side surface of the rotary member, the side surface being a unit mounting surface for mounting a control unit relating to at least one of generation and detection of the X-rays.

Abstract: An X-ray CT scanner having an X-ray tube for radiating X-rays to a subject, an X-ray detector for detecting X-rays that have penetrated the subject, a circular plate-like rotary member with an opening for insertion of a subject and having the X-ray tube and the X-ray detector mounted thereon at opposing positions with respect to the opening, a support for rotatably supporting the rotary member, and a rotary drive for rotating the rotary member around the subject. The X-ray and the X-ray detector are mounted on a side surface of the rotary member, the side surface being a unit mounting surface for mounting a control unit relating to at least one of generation and detection of the X-rays.