Patents by Inventor Eiji Kitagawa

Eiji Kitagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150278712
    Abstract: A method included accepting information on a desired ride place in ride sharing and information on a desired drop-off place in the ride sharing; identifying an amount of change in at least one of travel time and travel distance in case that a past travel path of a candidate vehicle for the ride sharing is changed to a travel path that passes through the desired ride place and the desired drop-off place; and sending a request for the ride sharing to a terminal corresponding to the candidate vehicle in accordance with the identified amount of change.
    Type: Application
    Filed: October 10, 2014
    Publication date: October 1, 2015
    Inventors: Takushi Fujita, Eiji Kitagawa, Takuro Ikeda
  • Patent number: 9147456
    Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive element including a first magnetic layer having a magnetization direction not to be changed by spin-injection writing, a second magnetic layer having a magnetization direction to be changeable by the spin-injection writing, and a tunnel barrier layer provided between the first and second magnetic layers; a first interconnect electrically connected to one of the first and second magnetic layers; a select transistor, with one of a source and drain thereof being electrically connected to the other one of the first and second magnetic layers; a second interconnect electrically connected to the other one of the source and drain; a diode having one terminal electrically connected to the other one of the first and second magnetic layers; a third interconnect electrically connected to the other terminal of the diode; and a sense amplifier electrically connected to the third interconnect.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: September 29, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Eiji Kitagawa
  • Publication number: 20150263270
    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer including O and one of Co, Fe, Ni and Mn, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a first electrode connected to the first magnetic layer, a second electrode connected to the second magnetic layer, and a resistive layer including N between the first magnetic layer and the first electrode.
    Type: Application
    Filed: July 16, 2014
    Publication date: September 17, 2015
    Inventors: Eiji KITAGAWA, Minoru AMANO
  • Patent number: 9117995
    Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: August 25, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaomi Daibou, Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Megumi Yakabe
  • Patent number: 9117924
    Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 25, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Tadaomi Daibou
  • Patent number: 8994131
    Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoharu Shimomura, Eiji Kitagawa, Chikayoshi Kamata, Minoru Amano, Yuichi Ohsawa, Daisuke Saida, Megumi Yakabe, Hiroaki Maekawa
  • Publication number: 20150084142
    Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
    Type: Application
    Filed: December 12, 2014
    Publication date: March 26, 2015
    Inventors: Toshihiko Nagase, Eiji Kitagawa, Katsuya Nishiyama, Tadashi Kai, Koji Ueda, Daisuke Watanabe
  • Patent number: 8953369
    Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: February 10, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Nagase, Eiji Kitagawa, Katsuya Nishiyama, Tadashi Kai, Koji Ueda, Daisuke Watanabe
  • Patent number: 8937832
    Abstract: According to one embodiment, a magnetic memory includes a magnetoresistive element. The element includes a first magnetic film having a variable magnetization perpendicular to a film surface, a second magnetic film having an invariable magnetization perpendicular to the film surface, a nonmagnetic film between the first and second magnetic films, a magnetic field application layer including a third magnetic film having a magnetization parallel to the film surface. The third magnetic film applies a magnetic field parallel to the film surface to the first magnetic film. A magnitude of the magnetization of the third magnetic film when supplying a read current is larger than a magnitude of the magnetization of the third magnetic film when supplying a write current.
    Type: Grant
    Filed: September 18, 2012
    Date of Patent: January 20, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Daisuke Saida, Naoharu Shimomura
  • Patent number: 8930173
    Abstract: A vehicle behavior estimation device includes: a storage unit configured to store a restriction condition at a point of a vehicle for which behavior is estimated; vehicle state data that includes position information and speed information of the vehicle; behavior parameters that include speed information and acceleration information of the vehicle; and physical restriction conditions that include an upper limit and a lower limit of the acceleration information; and a processor configured to obtain the vehicle state data by using the restriction condition at the point; calculate behavior parameters of a vehicle model that satisfy a physical restriction condition from the vehicle state data and the restriction condition at the point; update the vehicle state data of the vehicle model based on the behavior parameters; and repeat processing to calculate behavior parameters by using the updated vehicle state data and to update the vehicle state data.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: January 6, 2015
    Assignee: Fujitsu Limited
    Inventors: Takuro Ikeda, Eiji Kitagawa
  • Patent number: 8895162
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: November 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, National University Corporation Tohoku University
    Inventors: Katsuya Nishiyama, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Chunlan Feng
  • Patent number: 8878324
    Abstract: The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: November 4, 2014
    Assignees: Kabushiki Kaisha Toshiba, Tohoku University
    Inventors: Yushi Kato, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
  • Patent number: 8879307
    Abstract: A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Naoharu Shimomura, Hiroaki Yoda, Junichi Ito, Minoru Amano, Chikayoshi Kamata, Keiko Abe
  • Patent number: 8849625
    Abstract: A simulator used in a distributed process simulation includes: a storage unit configured to store map information, agent information, and area allocation information; a simulation execution unit; a condition determination unit configured to determine the condition of the reference agent to be referenced by the simulation execution unit based on a movement state of the agent; an allocation discrimination unit configured to discriminate another computer allocated an area in which the reference agent corresponding to the condition can be located; and an agent information acquisition unit configured to acquire the information about the agent satisfying the condition of the reference agent from the other discriminated computer.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: September 30, 2014
    Assignee: Fujitsu Limited
    Inventors: Takuro Ikeda, Eiji Kitagawa, Hiroshi Yamada
  • Publication number: 20140269038
    Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.
    Type: Application
    Filed: March 6, 2014
    Publication date: September 18, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu SHIMOMURA, Eiji KITAGAWA, Minoru AMANO, Daisuke SAIDA, Kay YAKUSHIJI, Takayuki NOZAKI, Shinji YUASA, Akio FUKUSHIMA, Hiroshi IMAMURA, Hitoshi KUBOTA
  • Publication number: 20140264673
    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.
    Type: Application
    Filed: February 28, 2014
    Publication date: September 18, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Eiji Kitagawa, Takao Ochiai, Kay Yakushiji, Makoto Konoto, Hitoshi Kubota, Shinji Yuasa, Takayuki Nozaki, Akio Fukushima
  • Patent number: 8803267
    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold.
    Type: Grant
    Filed: September 18, 2012
    Date of Patent: August 12, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadaomi Daibou, Yushi Kato
  • Patent number: 8787077
    Abstract: According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes a magnetic memory element which includes: a first and second ferromagnetic layers; and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The memory unit includes a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer, the magnetic field having a component in a first in-plane direction perpendicular to a stacking direction. The control unit is electrically connected to the magnetic memory element, and is configured to implement a setting operation of changing a voltage between the first and the second ferromagnetic layers from a first set voltage to a second set voltage. The magnetic field applied by the magnetic field application unit satisfies the condition of ? ? ? H > ( H u + H dx ) ? ( H u + H dx - H ext ) ( H u + H dx + H ext ) .
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: July 22, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Daisuke Saida, Naoharu Shimomura, Minoru Amano, Eiji Kitagawa, Yoshishige Suzuki
  • Patent number: 8750029
    Abstract: According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: June 10, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda
  • Patent number: 8750030
    Abstract: According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: June 10, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Ueda, Tadashi Kai, Toshihiko Nagase, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Hiroaki Yoda