Patents by Inventor Elliot H. Hartford, Jr.

Elliot H. Hartford, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10566534
    Abstract: Systems and arrangements of OVJP deposition devices are provided, in which one or more organic material crucibles are directly attached to an injection block and a print head without the need for external delivery components such as feedtubes. Each crucible may be hermetically sealed until it is attached to the injection block, allowing for a single device to provide for storage, transport, and deposition of the organic material.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: February 18, 2020
    Assignee: Universal Display Corporation
    Inventors: Matthew King, William E. Quinn, Gregory McGraw, Siddharth Harikrishna Mohan, Elliot H. Hartford, Jr., Benjamin Swedlove, Gregg Kottas, Tomasz Trojacki, Julia J. Brown
  • Publication number: 20180331327
    Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.
    Type: Application
    Filed: February 24, 2017
    Publication date: November 15, 2018
    Inventors: William E. QUINN, Gregory McGRAW, Siddharth HARIKRISHNA MOHAN, Matthew KING, Elliot H. HARTFORD, Jr.
  • Patent number: 10128468
    Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: November 13, 2018
    Assignee: Universal Display Corporation
    Inventors: William E. Quinn, Gregory McGraw, Siddharth Harikrishna Mohan, Matthew King, Elliot H. Hartford, Jr.
  • Publication number: 20170162835
    Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.
    Type: Application
    Filed: February 24, 2017
    Publication date: June 8, 2017
    Inventors: William E. QUINN, Gregory McGRAW, Siddharth HARIKRISHNA MOHAN, Matthew KING, Elliot H. HARTFORD, Jr.
  • Publication number: 20170104159
    Abstract: Systems and arrangements of OVJP deposition devices are provided, in which one or more organic material crucibles are directly attached to an injection block and a print head without the need for external delivery components such as feedtubes. Each crucible may be hermetically sealed until it is attached to the injection block, allowing for a single device to provide for storage, transport, and deposition of the organic material.
    Type: Application
    Filed: October 12, 2016
    Publication date: April 13, 2017
    Inventors: Matthew KING, William E. QUINN, Gregory MCGRAW, Siddharth HARIKRISHNA MOHAN, Elliot H. HARTFORD, Jr., Benjamin SWEDLOVE, Gregg KOTTAS, Tomasz TROJACKI, Julia J. BROWN
  • Patent number: 9583707
    Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: February 28, 2017
    Assignee: Universal Display Corporation
    Inventors: William E. Quinn, Gregory McGraw, Siddharth Harikrishna Mohan, Matthew King, Elliot H. Hartford, Jr.
  • Publication number: 20160083845
    Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.
    Type: Application
    Filed: September 18, 2015
    Publication date: March 24, 2016
    Inventors: William E. QUINN, Gregory McGRAW, Siddharth HARIKRISHNA MOHAN, Matthew KING, Elliot H. HARTFORD, JR.
  • Publication number: 20150380648
    Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.
    Type: Application
    Filed: June 4, 2015
    Publication date: December 31, 2015
    Inventors: Gregory McGRAW, William E. QUINN, Matthew KING, Elliot H. HARTFORD, JR., Siddharth Harikrishna MOHAN, Benjamin SWEDLOVE, Gregg KOTTAS
  • Publication number: 20150376787
    Abstract: Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.
    Type: Application
    Filed: March 10, 2015
    Publication date: December 31, 2015
    Inventors: Gregory MCGRAW, William E. QUINN, Matthew KING, Elliot H. HARTFORD, JR., Siddharth HARIKRISHNA MOHAN
  • Patent number: 5530267
    Abstract: We have discovered advantageous substrates for III-V nitride semiconductors such as GaN. The substrate material is of the YbFe.sub.2 O.sub.4 or InFeO.sub.3 (ZnO).sub.n structure type and has general composition RAO.sub.3 (MO).sub.n, where R is one or more of Sc, In, Y and the lanthanides (atomic number 67-71); A is one or more of Fe(III), Ga, and Al; M is one or more of Mg, Mn, Fe(II), Co, Cu, Zn and Cd; and n is an integer.gtoreq.1, typically<9. Furthermore, the substrate material is selected to have a lattice constant that provides less than .+-.5% lattice mismatch with the III-V nitride semiconductor material that is to be deposited thereon. At least some of the substrate materials (e.g., ScMgAlO.sub.4) typically can be readily and relatively cheaply produced in single crystal form, are readily clearable on the basal plane, and do essentially not interact chemically with the III-V nitride under typical deposition conditions.
    Type: Grant
    Filed: March 14, 1995
    Date of Patent: June 25, 1996
    Assignee: AT&T Corp.
    Inventors: Charles D. Brandle, Jr., Denis N. Buchanan, Elliot H. Hartford, Jr., Eric S. Hellman, Lynn F. Schneemeyer
  • Patent number: 5364836
    Abstract: Disclosed is an article that comprises a superconductor-insulator (s-i) layer structure. The superconductor material has nominal composition Ba.sub.1-x M.sub.x BiO.sub.3-y (M is K, Rb, or K and Rb, 0.35<x.ltorsim.0.5, 0<y.ltorsim.0.25). In some preferred embodiments the insulator is a Ba- and Bi containing oxide, exemplarily BaBi.sub.2 O.sub.4, Ba.sub.1-x M.sub.x BiO.sub.3 (0.ltoreq.x<0.35), or Ba.sub.1-x Bi.sub.1+x O.sub.3 (0.ltoreq.x.ltorsim.0.5). In other embodiments the insulator is an insulating oxide with the NaCl structure (e.g., Mg.sub.1-x Ca.sub.x O), an insulating perovskite (e.g., BaZrO.sub.3 ), an insulator with the K.sub.2 NiF.sub.4 structure (e.g., Ba.sub.2 PbO.sub.4), an insulating fluoride with the BaF.sub.2 structure (e.g., Ba.sub.1-x Sr.sub.x F.sub.2), or an insulating fluoride with the NaCl structure (e.g., LiF). Disclosed are also advantageous methods of making an article according to the invention.
    Type: Grant
    Filed: March 8, 1993
    Date of Patent: November 15, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Robert C. Dynes, Elliot H. Hartford, Jr., Eric S. Hellman, Andrew N. Pargellis, Fred Sharifi