Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

Abstract: Methods of modulating flow during vapor jet deposition of organic materials are provided. A method may include ejecting a vapor entrained in a delivery gas from a nozzle onto a substrate upon which the vapor condenses. A confinement gas may be provided that has a flow direction opposing a flow direction of the delivery gas ejected from the nozzle. A vacuum source may be provided that is adjacent to a delivery gas aperture of the nozzle. The method may include adjusting, by an actuator, a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target.

Abstract: Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.

Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

Abstract: Systems and arrangements of OVJP deposition devices are provided, in which one or more organic material crucibles are directly attached to an injection block and a print head without the need for external delivery components such as feedtubes. Each crucible may be hermetically sealed until it is attached to the injection block, allowing for a single device to provide for storage, transport, and deposition of the organic material.

Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.

Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.

Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.

Abstract: Systems and arrangements of OVJP deposition devices are provided, in which one or more organic material crucibles are directly attached to an injection block and a print head without the need for external delivery components such as feedtubes. Each crucible may be hermetically sealed until it is attached to the injection block, allowing for a single device to provide for storage, transport, and deposition of the organic material.

Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.

Abstract: Embodiments of the disclosed subject matter provide a nozzle assembly and method of making the same, the nozzle assembly including a first aperture formed on a first aperture plate to eject a carrier gas flow having organic vapor onto a substrate in a deposition chamber, second apertures formed on a second aperture plate disposed adjacent to the first aperture to form a vacuum aperture, where the first aperture plate and the second aperture plate are separated by a first separator plate, third apertures formed on a third aperture plate to eject purge gas that are disposed adjacent to the second aperture plate, where the second aperture plate and the third aperture plate are separated by second separator plate, and a third separator plate is disposed adjacent to the one or more third aperture plates to form a gas channel in the one or more third aperture plates.

Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

Abstract: Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.

Abstract: We have discovered advantageous substrates for III-V nitride semiconductors such as GaN. The substrate material is of the YbFe.sub.2 O.sub.4 or InFeO.sub.3 (ZnO).sub.n structure type and has general composition RAO.sub.3 (MO).sub.n, where R is one or more of Sc, In, Y and the lanthanides (atomic number 67-71); A is one or more of Fe(III), Ga, and Al; M is one or more of Mg, Mn, Fe(II), Co, Cu, Zn and Cd; and n is an integer.gtoreq.1, typically<9. Furthermore, the substrate material is selected to have a lattice constant that provides less than .+-.5% lattice mismatch with the III-V nitride semiconductor material that is to be deposited thereon. At least some of the substrate materials (e.g., ScMgAlO.sub.4) typically can be readily and relatively cheaply produced in single crystal form, are readily clearable on the basal plane, and do essentially not interact chemically with the III-V nitride under typical deposition conditions.

Abstract: Disclosed is an article that comprises a superconductor-insulator (s-i) layer structure. The superconductor material has nominal composition Ba.sub.1-x M.sub.x BiO.sub.3-y (M is K, Rb, or K and Rb, 0.35<x.ltorsim.0.5, 0<y.ltorsim.0.25). In some preferred embodiments the insulator is a Ba- and Bi containing oxide, exemplarily BaBi.sub.2 O.sub.4, Ba.sub.1-x M.sub.x BiO.sub.3 (0.ltoreq.x<0.35), or Ba.sub.1-x Bi.sub.1+x O.sub.3 (0.ltoreq.x.ltorsim.0.5). In other embodiments the insulator is an insulating oxide with the NaCl structure (e.g., Mg.sub.1-x Ca.sub.x O), an insulating perovskite (e.g., BaZrO.sub.3 ), an insulator with the K.sub.2 NiF.sub.4 structure (e.g., Ba.sub.2 PbO.sub.4), an insulating fluoride with the BaF.sub.2 structure (e.g., Ba.sub.1-x Sr.sub.x F.sub.2), or an insulating fluoride with the NaCl structure (e.g., LiF). Disclosed are also advantageous methods of making an article according to the invention.