Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).

Abstract: The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.

Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).

Abstract: The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV) solar cells or photo sensors (b) comprising three-dimensional arrays of semi-conductive micro- or nano-pillars (3b) deposited from suspensions e.g. by inkjet printing. Said pillars additionally increase the surface area of the device composed of an interpenetrating network of semiconductor particles of mesoscopic (2-50 nm) size forming junctions. In the present invention the active surface area is significantly increased when compared to previous flat structures (a, 3a), being fabricated preferably by inkjet patterning. Additionally, the invention allows for production of much more functional devices when compared with conventional mesoscopic PV cells due to smaller structure density what makes the layer more resistive to mechanical failure when bending.

Abstract: The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05?x<1 and 0.01?y?0.9]; of tin (OSn)?x with embedded metal tin (Sn?x) [(OSn)z+(Sn1-2)w wherein 0.05?z<1 and 0.01?w?0.9]; Cucx—Sn?x alloys with embedded metal Sn and Cu [(O—Cu—Sn)a+(Cu?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.9]; and of nickel (ONi)x with embedded Ni and Sn species [(O—Ni)a+(Ni?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.

Abstract: The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.

Abstract: The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV) solar cells or photo sensors (b) comprising three-dimensional arrays of semi-conductive micro- or nano-pillars (3b) deposited from suspensions e.g. by inkjet printing. Said pillars additionally increase the surface area of the device composed of an interpenetrating network of semiconductor particles of mesoscopic (2-50 nm) size forming junctions. In the present invention the active surface area is significantly increased when compared to previous flat structures (a, 3a), being fabricated preferably by inkjet patterning. Additionally, the invention allows for production of much more functional devices when compared with conventional mesoscopic PV cells due to smaller structure density what makes the layer more resistive to mechanical failure when bending.

Abstract: The presently disclosed subject matter can include or consist of the creation and manufacture of electrochromic thin film transistors, either self-sustaining or not, with lateral or vertical structure, deposited on any kind of functionalized substrate, referred to as electrochromic substrate, or non-functionalized substrate. The electrolyte material and the presence or not of an ultra-thin membrane can act as dielectric element. The electrochromic material can act as active semiconductor of the channel region. The gate, source and drain electrodes can be based on metal materials, such as Titanium, Gold, Aluminum, or degenerate semiconductive oxides, like Indium and Zinc oxide, Gallium-doped Zinc oxide. The device operation control process can be made by means of electronic and ionic current, and the off-state to on-state switch, or vice-versa, can be followed by a change of color of the device.

Abstract: The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2), with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05?x<1 and 0.01?y?0.9]; of tin (OSn)?x with embedded metal tin (Sn?x) [(OSn)z+(Sn1-2)w wherein 0.05?z<1 and 0.01?w?0.9]; Cucx—Sn?x alloys with embedded metal Sn and Cu [(O—Cu—Sn)a+(Cu?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.9]; and of nickel (ONi)x with embedded Ni and Sn species [(O—Ni)a+(Ni?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.

Abstract: The present invention relates to a system and process for detection and/or qualitative and quantitative identification of the biological material, such as specific sequences of nucleic acids or proteins as antibodies, present in biological samples. The system is composed by one or more light sources (1) combined with one or more integrated optical photo sensors, or not, and various electronic components (4), necessary for obtaining/processing of the signal emitted by the metal nanoprobes functionalized with a solution of biological composite, as well as also a micro-controller and a microprocessor, fixed or portable. This photosensor structure is able to detect and to quantify the color variations produced by metal nanoprobes, being this preferentially gold, functionalized by oligonucleotides complementary to specific DNA/RNA sequences, proteins, as for instance antibodies and/or antigens related with certain disease, or other sample or solution of biological composite, that are to be investigated.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.

Abstract: The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCuxNiy, with 0<x<3; 0<y<3) or multicomponent Gallium-Tin-Zinc-Copper-Titanium oxide, designated here after as GSZTCO, in different molar compositions, having an amorphous or crystalline structure and with the electrical characteristics of a donor or electron acceptor semiconductor, doped or not doped with impurities, such as, Zirconium or nickel or nitrogen, as a way to control the semiconductor electronic behaviour (valence); including the manufacture process at room temperature or temperatures below 100° C.

Abstract: The presently disclosed subject matter can include or consist of the creation and manufacture of electrochromic thin film transistors, either self-sustaining or not, with lateral or vertical structure, deposited on any kind of functionalized substrate, referred to as electrochromic substrate, or non-functionalized substrate. The electrolyte material and the presence or not of an ultra-thin membrane can act as dielectric element. The electrochromic material can act as active semiconductor of the channel region. The gate, source and drain electrodes can be based on metal materials, such as Titanium, Gold, Aluminium, or degenerate semiconductive oxides, like Indium and Zinc oxide, Gallium-doped Zinc oxide. The device operation control process can be made by means of electronic and ionic current, and the off-state to on-state switch, or vice-versa, can be followed by a change of colour of the device.

Abstract: The present invention consists of the direct deposition over paper of electric and electronic elements, single or integrated, including at nano-scale. The deposition, by virtue of the materials and scale utilized, is furthermore transparent, which allows the application of the present invention in the domain of graphic arts. The deposition is executed at close-to-ambient temperatures, an in a less controlled environment than that of traditional deposition processes. Furthermore, the low cost of printing obtained allows for the application of electronic paper to large surfaces.

Abstract: The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCux Niy, with 0<x<3; 0<y<3) or multicomponent Gallium-Tin-Zinc-Copper-Titanium oxide, designated here after as GSZTCO, in different molar compositions, having an amorphous or crystalline structure and with the electrical characteristics of a donor or electron acceptor semiconductor, doped or not doped with impurities, such as, Zirconium or nickel or nitrogen, as a way to control the semiconductor electronic behaviour (valence); including the manufacture process at room temperature or temperatures below 100° C.

Abstract: The present invention relates to a system and process for detection and/or qualitative and quantitative identification of the biological material, such as specific sequences of nucleic acids or proteins as antibodies, present in biological samples. The system is composed by one or more light sources (1) combined with one or more integrated optical photo sensors, or not, and various electronic components (4), necessary for obtaining/processing of the signal emitted by the metal nanoprobes functionalized with a solution of biological composite, as well as also a micro-controller and a microprocessor, fixed or portable. This photosensor structure is able to detect and to quantify the colour variations produced by metal nanoprobes, being this preferentially gold, functionalized by oligonucleotides complementary to specific DNA/RNA sequences, proteins, as for instance antibodies and/or antigens related with certain disease, or other sample or solution of biological composite, that are to be investigated.