Abstract: A thin film transistor includes an oxide semiconductor layer having a polycrystalline structure over a substrate, a gate electrode over the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a first region having a first carrier concentration and overlapping the gate electrode, a second region having a second carrier concentration and not overlapping the gate electrode, and a third region between the first region and the second region and overlapping the gate electrode. The second carrier concentration is larger than the first carrier concentration. A carrier concentration of the third region decreases from the second region to the first region in a channel length direction. A length of the third region is greater than or equal to 0.00 ?m and less than or equal to 0.60 ?m in the channel length direction.

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 ?m to 0.5 ?m.

Abstract: An oxide semiconductor film having crystallinity over a substrate contains indium (In) and a first metal element (M1). The oxide semiconductor film includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an electron backscatter diffraction (EBSD) method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <111> is greater than an occupancy rate of the crystal orientation <001> and an occupancy rate of the crystal orientation <101>.

Abstract: A thin film transistor includes a metal oxide layer over the substrate, an oxide semiconductor layer having crystallinity in contact with the metal oxide layer, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an EBSD method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <001> is less than or equal to 5%.

Abstract: A thin film transistor includes an oxide semiconductor layer having crystallinity over a substrate, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an EBSD method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <111> is greater than an occupancy rate of the crystal orientation <001> and an occupancy rate of the crystal orientation <101>.

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 ?, b=10.45±0.15 ?, c=11.01±0.15 ?, ?=111.70±0.50°, ?=107.70±0.50° and ?=90.00±0.50°.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 ?m to 0.5 ?m.

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Abstract: A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement. (InxGayAlz)2O3??(2) In the formula (2), 0.47?x?0.53, 0.17?y?0.43, 0.07?z?0.33, and x+y+z=1. 31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 ?, b=10.45±0.15 ?, c=11.01±0.15 ?, ?=111.70±0.50°, ?=107.70±0.50° and ?=90.00±0.50°.

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n < ? ? ? V e qL 2 ( I ) in which n is a carrier concentration (cm?3) of the semiconductor layer, ? is a dielectric constant (F/cm) of the semiconductor layer, Ve is a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.