Patents by Inventor Eran NEWMAN

Eran NEWMAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9698009
    Abstract: Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases, second reactive gases, and purge gas in at least one of the processing regions to deposit a film.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: July 4, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya E. Sato, Eran Newman
  • Publication number: 20160217999
    Abstract: Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases, second reactive gases, and purge gas in at least one of the processing regions to deposit a film.
    Type: Application
    Filed: January 20, 2016
    Publication date: July 28, 2016
    Inventors: Tatsuya E. Sato, Eran Newman
  • Publication number: 20160215392
    Abstract: Apparatus and methods for spatial atomic layer deposition are disclosed. The apparatus include a gas delivery system comprising a first gas flowing through a plurality of legs in fluid communication with a valve and a second gas flowing through a plurality of legs into the valves.
    Type: Application
    Filed: January 20, 2016
    Publication date: July 28, 2016
    Inventors: Joseph Yudovsky, Kevin Griffin, Aaron Miller, Jeff Tobin, Eran Newman, Tatsuya E. Sato, Patricia M. Liu
  • Patent number: 9275853
    Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: March 1, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tatsuya Sato, Steven C. H. Hung, Eran Newman
  • Publication number: 20150031196
    Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.
    Type: Application
    Filed: July 28, 2014
    Publication date: January 29, 2015
    Inventors: Tatsuya SATO, Steven C. H. HUNG, Eran NEWMAN