Patents by Inventor Erdem Arkun

Erdem Arkun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8501635
    Abstract: A method of growing single crystal III-N material on a semiconductor substrate includes providing a substrate including one of crystalline silicon or germanium and a layer of rare earth oxide. A layer of single crystal III-N material is epitaxially grown on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N or a III containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.
    Type: Grant
    Filed: September 29, 2012
    Date of Patent: August 6, 2013
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Rytis Dargis, Erdem Arkun, Michael Lebby
  • Patent number: 8455881
    Abstract: A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: June 4, 2013
    Assignee: Translucent, Inc.
    Inventors: Erdem Arkun, Andrew Clark
  • Publication number: 20130099357
    Abstract: A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 25, 2013
    Inventors: Rytis Dargis, Erdem Arkun, Radek Roucka, Andrew Clark, Michael Lebby
  • Publication number: 20130069039
    Abstract: A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.
    Type: Application
    Filed: September 19, 2011
    Publication date: March 21, 2013
    Inventors: Erdem Arkun, Andrew Clark
  • Publication number: 20130032858
    Abstract: Rare earth oxy-nitride buffered III-N on silicon includes a silicon substrate with a rare earth oxide (REO) structure, including several REO layers, is deposited on the silicon substrate. A layer of single crystal rare earth oxy-nitride is deposited on the REO structure. The REO structure is stress engineered to approximately crystal lattice match the layer of rare earth oxy-nitride so as to provide a predetermined amount of stress in the layer of rare earth oxy-nitride. A III oxy-nitride structure, including several layers of single crystal rare earth oxy-nitride, is deposited on the layer of rare earth oxy-nitride. A layer of single crystal III-N nitride is deposited on the III oxy-nitride structure. The III oxy-nitride structure is chemically engineered to approximately crystal lattice match the layer of III-N nitride and to transfer the predetermined amount of stress in the layer of rare earth oxy-nitride to the layer of III-N nitride.
    Type: Application
    Filed: August 3, 2011
    Publication date: February 7, 2013
    Inventors: Andrew Clark, Erdem Arkun, Robin Smith, Michael Lebby
  • Publication number: 20120280276
    Abstract: A single crystal germanium-on-silicon structure includes a single crystal silicon substrate. A single crystal layer of gadolinium oxide is epitaxially grown on the substrate. The gadolinium oxide has a cubic crystal structure and a lattice spacing approximately equal to the lattice spacing or a multiple of the single crystal silicon. A single crystal layer of lanthanum oxide is epitaxially grown on the gadolinium oxide with a thickness of approximately 12 nm or less. The lanthanum oxide has a lattice spacing approximately equal to the lattice spacing or a multiple of single crystal germanium and a cubic crystal structure approximately similar to the cubic crystal structure of the gadolinium oxide. A single crystal layer of germanium with a (111) crystal orientation is epitaxially grown on the layer of lanthanum oxide.
    Type: Application
    Filed: March 20, 2012
    Publication date: November 8, 2012
    Inventors: Rytis Dargis, Erdem Arkun, Andrew Clark, Michael Lebby
  • Publication number: 20120256232
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Application
    Filed: September 30, 2011
    Publication date: October 11, 2012
    Applicant: Translucent, Inc.
    Inventors: Andrew Clark, F. Erdem Arkun, Michael Lebby
  • Publication number: 20120241890
    Abstract: A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
    Type: Application
    Filed: March 22, 2011
    Publication date: September 27, 2012
    Inventors: Andrew Clark, Erdem Arkun, Rytis Dargis, David L. Williams
  • Publication number: 20120104443
    Abstract: A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
    Type: Application
    Filed: August 30, 2011
    Publication date: May 3, 2012
    Inventors: Andrew Clark, Michael Lebby, Erdem Arkun, Rytis Dargis
  • Publication number: 20120104567
    Abstract: An insulative layer on a semiconductor substrate and a method of fabricating the structure includes the steps of depositing a single crystal layer of rare earth oxide on a semiconductor substrate to provide electrical insulation and thermal management. The rare earth oxide is crystal lattice matched to the substrate. A layer of single crystal IIIOxNy is formed in overlying relationship on the rare earth oxide by transitioning from the layer of rare earth oxide to a single crystal layer of IIIOxNy within a one wafer single epitaxial process. In the preferred embodiment the substrate is silicon, the rare earth oxide is Gd2O3, and the IIIOxNy includes AlOxNy.
    Type: Application
    Filed: August 12, 2011
    Publication date: May 3, 2012
    Inventors: Andrew Clark, Erdem Arkun, Michael Lebby
  • Publication number: 20120073648
    Abstract: The invention relates to photovoltaic device structures of more than one layer comprising rare earth compounds and Group IV materials enabling spectral harvesting outside the conventional absorption limits for silicon.
    Type: Application
    Filed: September 24, 2010
    Publication date: March 29, 2012
    Inventors: Andrew Clark, Robin Smith, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8049100
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: November 1, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8039738
    Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8039737
    Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100122720
    Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 20, 2010
    Applicant: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100116315
    Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 13, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100109047
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 6, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby