Abstract: Adaptive control of operating and body bias voltages. In accordance with a first embodiment of the present invention, a desirable operating frequency for the microprocessor is determined. Information stored within and specific to the microprocessor is accessed. The information can comprise coefficients of a quadratic approximation of a frequency-voltage characteristic of the microprocessor for a set of body biasing conditions. An efficient voltage for operating the microprocessor at the desirable operating frequency is computed. The microprocessor is operated at the efficient voltage and the set of body biasing conditions.

Abstract: Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.

Abstract: Adaptive control of operating and body bias voltages. In accordance with a first embodiment of the present invention, a desirable operating frequency for the microprocessor is determined. Information stored within and specific to the microprocessor is accessed. The information can comprise coefficients of a quadratic approximation of a frequency-voltage characteristic of the microprocessor for a set of body biasing conditions. An efficient voltage for operating the microprocessor at the desirable operating frequency is computed. The microprocessor is operated at the efficient voltage and the set of body biasing conditions.

Abstract: Adaptive control of operating and body bias voltages. In accordance with a first embodiment of the present invention, a desirable operating frequency for the microprocessor is determined. Information stored within and specific to the microprocessor is accessed. The information can comprise coefficients of a quadratic approximation of a frequency-voltage characteristic of the microprocessor for a set of body biasing conditions. An efficient voltage for operating the microprocessor at the desirable operating frequency is computed. The microprocessor is operated at the efficient voltage and the set of body biasing conditions.

Abstract: Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.

Abstract: Adaptive control of operating and body bias voltages. In accordance with a first embodiment of the present invention, a desirable operating frequency for the microprocessor is determined. Information stored within and specific to the microprocessor is accessed. The information can comprise coefficients of a quadratic approximation of a frequency-voltage characteristic of the microprocessor for a set of body biasing conditions. An efficient voltage for operating the microprocessor at the desirable operating frequency is computed. The microprocessor is operated at the efficient voltage and the set of body biasing conditions.

Abstract: Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.

Abstract: Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.

Abstract: A plurality of devices under test are each subject to a body bias voltage during burn-in testing. The body bias voltage reduces leakage current associated with the devices under test. A test controller can access a store of information including leakage current as a function of body bias voltage and can select a body bias voltage that corresponds to the minimum leakage current in the store of information. A voltage supply coupled to the test controller can provide the body bias voltage corresponding to the minimum leakage current to the devices under test during the burn-in testing.

Abstract: Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.

Abstract: Adaptive control of operating and body bias voltages. In accordance with a first embodiment of the present invention, a desirable operating frequency for the microprocessor is determined. Information stored within and specific to the microprocessor is accessed. The information can comprise coefficients of a quadratic approximation of a frequency-voltage characteristic of the microprocessor for a set of body biasing conditions. An efficient voltage for operating the microprocessor at the desirable operating frequency is computed. The microprocessor is operated at the efficient voltage and the set of body biasing conditions.

Abstract: Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.

Abstract: Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.

Abstract: Systems and methods for reducing temperature dissipation during burn-in testing are described. A plurality of devices under test are each subject to a body bias voltage. The body bias voltage reduces leakage current associated with the devices under test. Accordingly, heat dissipation is reduced during burn-in. The body bias voltage is selected to achieve a desired junction temperature at the devices under test.

Abstract: Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.

Abstract: Systems and methods for reducing temperature dissipation during burn-in testing are described. A plurality of devices under test are each subject to a body bias voltage. The body bias voltage is selected to substantially minimize leakage current associated with the plurality of devices under test. Accordingly, heat dissipation is reduced during burn-in.