Patents by Inventor Eric H. Lenz

Eric H. Lenz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140033828
    Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.
    Type: Application
    Filed: October 3, 2013
    Publication date: February 6, 2014
    Applicant: Lam Research Corporation
    Inventors: Dean J. Larson, Robert C. Hefty, James V. Tietz, William S. Kennedy, Eric H. Lenz, William M. Denty, JR., Enrico Magni
  • Publication number: 20130342951
    Abstract: A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.
    Type: Application
    Filed: August 10, 2005
    Publication date: December 26, 2013
    Inventors: Jose Tong, Eric H. Lenz
  • Patent number: 8562272
    Abstract: In various exemplary embodiments described herein, a system includes a plurality of carrier arms each having concentrically mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner. A linear wafer transport mechanism moves wafers to or from select ones of the wafer carriers on the plurality of carrier arms to an easy handoff location for a load/unload robot.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: October 22, 2013
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Patent number: 8343876
    Abstract: A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: January 1, 2013
    Assignee: Lam Research Corporation
    Inventors: S. M. Reza Sadjadi, Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa
  • Patent number: 8282698
    Abstract: In various exemplary embodiments described herein, a system and related method to reduce particle contamination on substrates is disclosed. The system includes a substrate traverser mechanism having tracks to transport substrate carriers with one or more traverser ducts arranged to surround, at least partially, the tracks. The one or more ducts have slits along at least a substantial portion of a length of the tracks. A traverser exhaust fan is coupled to one end of each of the one or more traverser ducts. The fan provides sufficient volumetric airflow such that a velocity of the volumetric airflow through the slits is greater than a terminal settling velocity of a predetermined particle size. The fan draws particles less than approximately the predetermined particle size generated by the substrate traverser mechanism into the one or more traverser ducts.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: October 9, 2012
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Patent number: 8080760
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Grant
    Filed: January 25, 2010
    Date of Patent: December 20, 2011
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • Publication number: 20110281435
    Abstract: A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
    Type: Application
    Filed: July 22, 2011
    Publication date: November 17, 2011
    Applicant: LAM RESEARCH CORPORATION
    Inventors: S. M. Reza Sadjadi, Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa
  • Publication number: 20110232771
    Abstract: In various exemplary embodiments described herein, a system and related method to provide airflow management system in a substrate production tool includes a housing to couple the substrate production tool to a fan filter unit to provide filtered air to the housing, a facility connection to couple the substrate production tool to a reduced pressure exhaust mechanism, a substrate transfer section coupled below the housing and in airflow communication with the facility connection, and a substrate process area coupled to the substrate transfer section by one or more substrate transfer slots. A chamber substantially containing the substrate transfer section and the substrate process area is coupled to the housing to receive the filtered air and to the facility connection to provide an exhaust for excess gas flow. The chamber maintains a low pressure in the substrate process area relative to the substrate transfer section.
    Type: Application
    Filed: March 24, 2010
    Publication date: September 29, 2011
    Applicant: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Publication number: 20110236159
    Abstract: In various exemplary embodiments described herein, a system and related method to reduce particle contamination on substrates is disclosed. The system includes a substrate traverser mechanism having tracks to transport substrate carriers with one or more traverser ducts arranged to surround, at least partially, the tracks. The one or more ducts have slits along at least a substantial portion of a length of the tracks. A traverser exhaust fan is coupled to one end of each of the one or more traverser ducts. The fan provides sufficient volumetric airflow such that a velocity of the volumetric airflow through the slits is greater than a terminal settling velocity of a predetermined particle size. The fan draws particles less than approximately the predetermined particle size generated by the substrate traverser mechanism into the one or more traverser ducts.
    Type: Application
    Filed: March 24, 2010
    Publication date: September 29, 2011
    Applicant: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Publication number: 20110200415
    Abstract: In various exemplary embodiments described herein, a system includes a plurality of carrier arms each having concentrically mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner. A linear wafer transport mechanism moves wafers to or from select ones of the wafer carriers on the plurality of carrier arms to an easy handoff location for a load/unload robot.
    Type: Application
    Filed: February 16, 2010
    Publication date: August 18, 2011
    Applicant: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Patent number: 7867356
    Abstract: An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.
    Type: Grant
    Filed: May 21, 2007
    Date of Patent: January 11, 2011
    Assignee: Lam Research Corporation
    Inventors: Jose Tong, Eric H. Lenz
  • Patent number: 7838086
    Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.
    Type: Grant
    Filed: October 16, 2008
    Date of Patent: November 23, 2010
    Assignee: Lam Research Corporation
    Inventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
  • Publication number: 20100159707
    Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.
    Type: Application
    Filed: March 3, 2010
    Publication date: June 24, 2010
    Applicant: Lam Research Corporation
    Inventors: Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa, Reza Sadjadi
  • Patent number: 7732728
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Grant
    Filed: January 17, 2007
    Date of Patent: June 8, 2010
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • Publication number: 20100124822
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Application
    Filed: January 25, 2010
    Publication date: May 20, 2010
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • Patent number: 7708859
    Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.
    Type: Grant
    Filed: April 30, 2004
    Date of Patent: May 4, 2010
    Assignee: Lam Research Corporation
    Inventors: Zhisong Huang, Jose Tong Sam, Eric H. Lenz, Rajinder Dhindsa, Reza Sadjadi
  • Publication number: 20090245984
    Abstract: A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers.
    Type: Application
    Filed: June 25, 2008
    Publication date: October 1, 2009
    Applicant: LAM RESEARCH CORPORATION
    Inventor: Eric H. Lenz
  • Patent number: 7524397
    Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.
    Type: Grant
    Filed: January 3, 2002
    Date of Patent: April 28, 2009
    Assignee: Lam Research Corporation
    Inventors: Fangli Hao, Albert R. Ellingboe, Eric H. Lenz
  • Patent number: RE41266
    Abstract: An electrode assembly for a plasma reactor, such as a plasma etch or plasma-enhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof. The electrode plate is composed of a substantially pure material which is compatible with a particular reaction being performed in the reactor, while the support frame is composed of a material having desirable thermal, electrical, and structural characteristics. The support frame is bonded to the electrode plate using a bonding layer, usually a ductile metallic bonding layer, which provides effective thermal and electrical coupling while permitting a degree of thermal expansion mismatch between the support frame and the electrode plate.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: April 27, 2010
    Assignee: Lam Research Corporation
    Inventors: Raymond L. Degner, Eric H. Lenz
  • Patent number: RE43508
    Abstract: A confinement assembly for confining a discharge within an interaction space of a plasma processing apparatus comprising a stack of rings and at least one electrically conductive member. The rings are spaced apart from each other to form slots therebetween and are positioned to surround the interaction space. At least one electrically conductive member electrically couples each ring. The electrically conductive member contacts each ring at least at a point inside of the outer circumference of each ring.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: July 17, 2012
    Assignee: LAM Research Corporation
    Inventor: Eric H. Lenz