Patents by Inventor Eric H. Lenz

Eric H. Lenz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090041951
    Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.
    Type: Application
    Filed: October 16, 2008
    Publication date: February 12, 2009
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
  • Patent number: 7455748
    Abstract: A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
    Type: Grant
    Filed: June 20, 2003
    Date of Patent: November 25, 2008
    Assignee: Lam Research Corporation
    Inventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
  • Publication number: 20080171444
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Application
    Filed: January 17, 2007
    Publication date: July 17, 2008
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • Patent number: 7252738
    Abstract: An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: August 7, 2007
    Assignee: Lam Research Corporation
    Inventors: Jose Tong, Eric H Lenz
  • Patent number: 7093560
    Abstract: A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.
    Type: Grant
    Filed: April 16, 2003
    Date of Patent: August 22, 2006
    Assignee: Lam Research Corporation
    Inventors: Jose Tong, Eric H. Lenz
  • Patent number: 7094315
    Abstract: A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: August 22, 2006
    Assignee: LAM Research Corporation
    Inventors: Jian J. Chen, Mukund Srinivasan, Eric H. Lenz
  • Patent number: 6872281
    Abstract: A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: March 29, 2005
    Assignee: Lam Research Corporation
    Inventors: Jian J. Chen, Mukund Srinivasan, Eric H. Lenz
  • Patent number: 6863784
    Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.
    Type: Grant
    Filed: November 5, 2003
    Date of Patent: March 8, 2005
    Assignee: Lam Research Corporation
    Inventors: Fangli Hao, Keith Dawson, Eric H. Lenz
  • Patent number: 6838012
    Abstract: Methods of etching dielectric materials in a semiconductor processing apparatus use a thick silicon upper electrode that can be operated at high power levels for an extended service life.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: January 4, 2005
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Publication number: 20040187787
    Abstract: A substrate support having a temperature controlled substrate support surface includes a liquid supply system having at least one liquid source and a plurality of liquid flow passages. The liquid supply system can include valves to control the distribution of liquid to the liquid flow passages. The liquid supply system also can include a controller to control its operation. Liquid can be distributed through the liquid flow passages in various patterns. The substrate support can also include a heat transfer gas supply system, which supplies a heat transfer gas between the substrate support surface and a substrate supported on the substrate support surface.
    Type: Application
    Filed: March 31, 2003
    Publication date: September 30, 2004
    Inventors: Keith E. Dawson, Eric H. Lenz
  • Publication number: 20040108301
    Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.
    Type: Application
    Filed: November 5, 2003
    Publication date: June 10, 2004
    Inventors: Fangli Hao, Keith Dawson, Eric H. Lenz
  • Publication number: 20040083975
    Abstract: An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.
    Type: Application
    Filed: September 20, 2002
    Publication date: May 6, 2004
    Applicant: Lam Research Corporation
    Inventors: Jose Tong, Eric H. Lenz
  • Publication number: 20040084410
    Abstract: Methods of etching dielectric materials in a semiconductor processing apparatus use a thick silicon upper electrode that can be operated at high power levels for an extended service life.
    Type: Application
    Filed: October 31, 2002
    Publication date: May 6, 2004
    Inventor: Eric H. Lenz
  • Patent number: 6716762
    Abstract: A confinement assembly for confining a discharge within an interaction space of a plasma processing apparatus comprising a stack of rings and at least one electrically conductive member. The rings are spaced apart from each other to form slots therebetween and are positioned to surround the interaction space. At least one electrically conductive member electrically couples each ring. The electrically conductive member contacts each ring at least at a point inside of the outer circumference of each ring.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: April 6, 2004
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Patent number: 6669811
    Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.
    Type: Grant
    Filed: November 5, 2001
    Date of Patent: December 30, 2003
    Assignee: Lam Research Corporation
    Inventors: Fangli Hao, Keith Dawson, Eric H. Lenz
  • Publication number: 20030198753
    Abstract: A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.
    Type: Application
    Filed: April 16, 2003
    Publication date: October 23, 2003
    Applicant: Lam Research Corporation
    Inventors: Jose Tong, Eric H. Lenz
  • Patent number: 6602381
    Abstract: A confinement assembly for confining a discharge within an interaction space of a plasma processing apparatus comprising a stack of rings and at least one electrically conductive member. The rings are spaced apart from each other to form slots therebetween and are positioned to surround the interaction space. At least one electrically conductive member electrically couples each ring. The electrically conductive member contacts each ring at least at a point inside of the outer circumference of each ring.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: August 5, 2003
    Assignee: Lam Research Corporation
    Inventor: Eric H. Lenz
  • Patent number: 6536777
    Abstract: The invention relates to a fluid connector for sealing an interface between first and second fluid passages in a plasma processing apparatus. The fluid connector includes a first end member having a first geometry. The first geometry is arranged to substantially seal a first mating region of the first fluid passage. The fluid connector further includes a second end member having a second geometry. The second geometry is arranged to substantially seal a second mating region of the second fluid passage and the second geometry is configured differently than the first geometry. The fluid connector additionally includes an opening that extends through the first end member and the second end member through which a fluid may pass for use by the, semiconductor processing apparatus so as to fluidly couple the first fluid passage to the second fluid passage.
    Type: Grant
    Filed: March 31, 1999
    Date of Patent: March 25, 2003
    Assignee: Lam Research Corporation
    Inventors: Fangli J. Hao, Eric H. Lenz, Keith E. Dawson
  • Publication number: 20020100555
    Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.
    Type: Application
    Filed: November 5, 2001
    Publication date: August 1, 2002
    Applicant: LAM RESEARCH
    Inventors: Fangli Hao, Keith Dawson, Eric H. Lenz
  • Publication number: 20020059981
    Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.
    Type: Application
    Filed: January 3, 2002
    Publication date: May 23, 2002
    Inventors: Fangi Hao, Albert R. Ellingboe, Eric H. Lenz