Abstract: A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

Abstract: A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

Abstract: A process for producing at least two adjacent regions, each comprising an array of light-emitting wires connected together in a given region by a transparent conductive layer, comprises: producing, on a substrate, a plurality of individual zones for growing wires extending over an area greater than the cumulative area of the two chips; growing wires in the individual growth zones; removing wires from at least one zone forming an initial free area to define the arrays of wires, the initial free area comprising individual growth zones level with the removed wires; and depositing a transparent conductive layer on each array of wires to electrically connect the wires of a given array of wires, each conductive layer being separated from the conductive layer of the neighbouring region by a free area. A device obtained using the process of the invention is also provided.

Abstract: The present application relates to the fabrication of an electronic component. The component comprises two, superposed integrated circuits: one of which is formed on the front side of a thinned first substrate, and the other of which is produced on the front side of a second substrate, with an insulating planarization layer interposed between the front sides of the two substrates. The silicon of the backside of the thinned substrate is opened locally above a first conducting area located in the thinned substrate and above a second conducting area located in the second substrate. A conducting layer portion, deposited on both areas, electrically connects them so as to provide the interconnection between the two circuits. The external connection pads may also be formed in this conducting layer.

Abstract: The invention relates to the fabrication of an electronic component having a very high integration density, notably an image sensor. The component comprises two, superposed integrated circuits, one of which one (the image sensor) is formed on the front side of a thinned first silicon substrate (12) and the other of which is produced on the front side of a second substrate (30), with an insulating planarization layer (28, 48) interposed between the front sides of the two substrates. The silicon (12) of the backside of the thinned substrate is opened locally above a first conducting area (P1) located in the thinned substrate and above a second conducting area (P2) located in the second substrate. A conducting layer portion (50), deposited on both areas, electrically connects them so as to provide the interconnection between the two circuits. The external connection pads (PL1) may also be formed in this conducting layer (50).

Abstract: The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters (18) on the semiconductive layer thus thinned.

Abstract: The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned.

Abstract: The invention relates to method for making a color image sensor. The method comprises: the formation, on the front face of a semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone being surrounded by input/output pads (22), the transfer of the wafer by its front face against the front face of a temporary supporting substrate (20), the elimination of the major part of the thickness of the silicon wafer, leaving a fine silicon layer (30) on the substrate, this fine silicon layer comprising the image detection circuits.

Abstract: The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor. The image sensor comprises a transparent substrate (40) on the upper part of which are superimposed, successively, a mosaic of color filters (18), a very thin silicon layer (30) comprising photosensitive zones, and a stack of conductive layers (14) and insulating layers (16) defining image detection circuits enabling the collection of the electrical charges generated by the illumination of the photosensitive zones through the transparent substrate. The manufacturing method consists in producing the photosensitive circuits on a silicon wafer, transferring said wafer on to a temporary substrate, thinning the wafer down to a thickness of about three to 30 micrometers, depositing color filters on the surface of the remaining silicon layer and transferring the structure to a permanent transparent substrate and eliminating the temporary substrate.

Abstract: The invention relates to method for making a color image sensor. The method comprises: the formation, on the front face of a semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone being surrounded by input/output pads (22), the transfer of the wafer by its front face against the front face of a temporary supporting substrate (20), the elimination of the major part of the thickness of the silicon wafer, leaving a fine silicon layer (30) on the substrate, this fine silicon layer comprising the image detection circuits.

Abstract: The invention relates to the making of color image sensors for miniature cameras.

Abstract: The invention relates to very small-sized color image sensors.