Abstract: Methods for forming semiconductor fins include forming a sacrificial semiconductor structure around a hardmask fin on an underlying semiconductor layer. A first etch is performed that partially etches away a portion of the hardmask fin and the sacrificial semiconductor structure with a first etch chemistry. A second etch is performed that etches away remaining material of the portion of the hardmask fin and partially etches remaining material of the sacrificial semiconductor structure with a second etch chemistry. A semiconductor fin is etched from the semiconductor layer using the etched hardmask fin as a mask.

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Abstract: A semiconductor device includes etching fins into a bulk substrate in an active region, the bulk substrate including an intermediate layer formed over a base layer and a first semiconductor layer formed over the intermediate layer such that the fins extend through the first semiconductor layer into the intermediate layer to form tapered bottom portions of the fins within the intermediate layer and vertical fin sidewalls of a semiconductor portions of the fins within the first semiconductor layer. A second semiconductor layer is formed around the tapered bottom portions below the semiconductor portions of the fins such that the second semiconductor layer covers the tapered bottom portions to form a top surface proximal to the semiconductor portions of the fins that is substantially parallel to a bottom surface of the top surface of the base layer. A gate structure is formed around the fins.

Abstract: A semiconductor device includes etching fins into a bulk substrate in an active region, the bulk substrate including an intermediate layer formed over a base layer and a first semiconductor layer formed over the intermediate layer such that the fins extend through the first semiconductor layer into the intermediate layer to form tapered bottom portions of the fins within the intermediate layer and vertical fin sidewalls of a semiconductor portions of the fins within the first semiconductor layer. A second semiconductor layer is formed around the tapered bottom portions below the semiconductor portions of the fins such that the second semiconductor layer covers the tapered bottom portions to form a top surface proximal to the semiconductor portions of the fins that is substantially parallel to a bottom surface of the top surface of the base layer. A gate structure is formed around the fins.

Abstract: Methods for forming semiconductor fins include forming a sacrificial semiconductor structure around a hardmask fin on an underlying semiconductor layer. A first etch is performed that partially etches away a portion of the hardmask fin and the sacrificial semiconductor structure with a first etch chemistry. A second etch is performed that etches away remaining material of the portion of the hardmask fin and partially etches remaining material of the sacrificial semiconductor structure with a second etch chemistry. A semiconductor fin is etched from the semiconductor layer using the etched hardmask fin as a mask.

Abstract: Methods for forming semiconductor fins include forming a protective layer around a base of a hardmask fin on an underlying semiconductor layer. A portion of the hardmask fin is etched away with an etch that is selective to the protective layer. A semiconductor fin is etched from the semiconductor layer using the etched hardmask fin as a mask.

Abstract: A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Abstract: A method of manufacturing a wafer assembly includes forming an array of planar wafer level metal posts extending from a surface of a substrate of a first wafer. After forming the array of posts, an oxide layer is applied over the surface of the first wafer and around the array of posts, the oxide layer being applied at a temperature of below 150 degrees Celsius.

Abstract: Embodiments are directed to methods and resulting structures for a vertical field effect transistor (VFET) having a super long channel. A pair of semiconductor fins is formed on a substrate. A semiconductor pillar is formed between the semiconductor fins on the substrate. A region that extends under all of the semiconductor fins and under part of the semiconductor pillar is doped. A conductive gate is formed over a channel region of the semiconductor fins and the semiconductor pillar. A surface of the semiconductor pillar serves as an extended channel region when the gate is active.

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Abstract: Methods, assemblies, and equipment are described for bonding one or more die that may be of dissimilar thickness to a wafer. The die may be fabricated and singulated with a planarized oxide layer protecting from wafer dicing and handling debris one or more metallized post structures connecting to an integrated circuit. Face sides of the die are bonded to a first handle wafer, such that the respective post structures are aligned in a common plane. The substrate material back sides of the bonded die are then thinned to a uniform thickness and bonded to a second handle wafer. The assembly may then be flipped, and the first handle wafer and protective layer including potential dicing and handling debris removed. The post structures are revealed, resulting in a composite wafer assembly including the second handle and one or more uniformly thinned die mounted thereto.

Abstract: A method of manufacturing an array of planar wafer level metal posts includes plating an array of posts within a photoresist (PR) pattern mold on a substrate of a first wafer. Stripping the PR pattern mold from the substrate and array of posts. Applying an oxide layer, at a temperature of below 150 degrees Celsius, over a surface of the first wafer. Applying chemical-mechanical polishing (CMP) to planarize the oxide layer and the array of posts.

Abstract: Sub-fin removal techniques for SOI like isolation in finFET devices are provided. In one aspect, a method for forming a finFET device includes: etching partial fins in a substrate, wherein the partial fins include top portions of fins of the finFET device; forming a bi-layer spacer on the top portions of the fins; complete etching of the fins in the substrate to form bottom portions of the fins of the finFET device; depositing an insulator between the fins; recessing the insulator enough to expose a region of the fins not covered by the bi-layer spacer; removing the exposed region of the fins to create a gap between the top and bottom portions of the fins; filling the gap with additional insulator. A method for forming a finFET device is also provided where placement of the fin spacer occurs after (rather than before) insulator deposition. A finFET device is also provided.

Abstract: A method of constructing a micro-valve includes providing a substrate for an actuating beam of the micro-valve, the substrate including a first surface and a second surface. The method also includes forming a plurality of constituent layers on the first surface of the actuating beam, including a layer of piezoelectric material. The method also includes removing a portion of the substrate from at least one of the first surface or the second surface to define a cantilevered portion of the actuating beam. The method also includes providing an orifice plate including an orifice. The method also includes providing a valve seat on a surface of the orifice plate, the valve seat having an opening aligned with the orifice. The method also includes attaching the surface of the orifice plate to the second surface via an adhesive such that an overlapping portion of the cantilevered portion overlaps the orifice.

Abstract: A micro-valve includes an orifice plate having a first surface, a second surface and an orifice extending from the first surface to the second surface. An actuating beam is disposed in spaced relation to the orifice plate. The actuating beam includes a base portion and a cantilevered portion. The base portion is separated from the orifice plate by a predetermined distance. The cantilevered portion extends from the base portion such that an overlapping portion thereof overlaps the orifice. The actuating beam is movable between a closed position and an open position. The micro-valve also includes a sealing structure including a sealing member disposed at the overlapping portion of the cantilevered portion. When the actuating beam is in the closed position, the cantilevered portion is positioned such that the sealing structure seals the orifice so as to close the micro-valve.

Abstract: A micro-valve includes an orifice plate including an orifice. The micro-valve further includes an actuating beam having a first end and a second end. The actuating beam also includes a base layer and a layer of piezoelectric material disposed on the base layer, a bottom electrode layer, and a top electrode layer. At an electrical connection portion of the actuating beam, the layer of piezoelectric material includes a first via, and a portion of the top electrode layer disposed within the first via, and a portion of the bottom electrode disposed beneath the first via. The actuating beam includes a base portion extending from the electrical connection portion and a cantilevered portion extending from the base portion. The cantilevered portion is movable in response to application of a differential electrical signal between the bottom electrode layer and the top electrode layer to one of open or close the micro-valve.

Abstract: A marking system includes a valve body including an orifice plate including multiple orifices and multiple micro-valves. Each micro-valve includes an actuating beam movable from a closed position in which a corresponding one of the orifices is sealed by a portion of the actuating beam such that the micro-valve is closed, into a peak position in response to application of a control signal. A controller is configured to generate a control signal for each of the actuating beams, each control signal including a drive pulse having a predetermined voltage such that the actuating beam moves from the closed position into the peak position in which the corresponding orifice is open and returns to the closed position in a characteristic period, wherein the drive pulse has a duration that substantially corresponds to the characteristic period such that the actuating beam is in the closed position after the drive pulse is complete.

Abstract: A micro-valve includes an orifice plate including a first surface and a second surface, and an orifice extending from the first surface to the second surface. The micro-valve also includes a spacing member disposed on the first surface and offset from the orifice, a valve seat disposed on the first surface. The valve seat defines an opening in fluid communication with the orifice in a flow direction. The micro-valve also includes an actuating beam disposed on the spacing member extending from the spacing member toward the orifice, the actuating beam being moveable between an open position and a closed position. The micro-valve also includes a sealing member affixed to an end portion of the actuating beam. In a closed position, a sealing surface of the sealing member contacts the valve seat to close the micro-valve.

Abstract: Embodiments are directed to methods and resulting structures for a vertical field effect transistor (VFET) having a super long channel. A pair of semiconductor fins is formed on a substrate. A semiconductor pillar is formed between the semiconductor fins on the substrate. A region that extends under all of the semiconductor fins and under part of the semiconductor pillar is doped. A conductive gate is formed over a channel region of the semiconductor fins and the semiconductor pillar. A surface of the semiconductor pillar serves as an extended channel region when the gate is active.