Abstract: Sputter targets and a process for producing sputter targets are provided, comprised of carbides and/or nitrides and/or borides of refractory metals. In a first step, a dense composite body is produced comprised of one or more carbides and/or nitrides and/or borides of the metals of Groups IV A-VI A of the periodic table and a metallic binding agent comprised of one or more metals of the iron group of the periodic table. This composite body in the form of a shaped blank is machined, if necessary, and the binding agent is removed by chemical or electrochemical treatment. The sputter target as so produced has excellent mechanical strength and high thermal shock resistance. Levels of contaminating elements and the residual metallic binding agent are extremely low, meeting the requirements typically placed on sputter targets.

Abstract: Organotin semiconductor thin films are deposited on a substrate by plasma deposition of reactive organotin species. Conductivity can be increased by heat-treating organotin semiconductors in a reducing atmosphere at a temperature below the melting point of tin. Organotin semiconductors are rendered conductive by exposure to electron or particle beam.