Patents by Inventor Erik William Young
Erik William Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961875Abstract: A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.Type: GrantFiled: January 19, 2023Date of Patent: April 16, 2024Assignee: Lumileds LLCInventors: Ashish Tandon, Rajat Sharma, Joseph Flemish, Andrei Papou, Wen Yu, Erik William Young, Yu-Chen Shen, Luke Gordon
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Patent number: 11942507Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.Type: GrantFiled: March 5, 2021Date of Patent: March 26, 2024Assignee: Lumileds LLCInventors: Erik William Young, Dennis Scott, Rajat Sharma, Toni Lopez, Yu-Chen Shen
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Patent number: 11935987Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.Type: GrantFiled: October 25, 2022Date of Patent: March 19, 2024Assignee: Lumileds LLCInventors: Toni Lopez, Erik William Young, Rajiv Pathak
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Patent number: 11848402Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A multilayer composite film is on the P-type layer, the multilayer composite film comprising: a current spreading layer on the P-type layer, the current spreading layer having a first portion and a second portion; a dielectric layer on the second portion of the current spreading layer; a via opening defined by sidewalls in the dielectric layer and the first portion of the current spreading layer; and a P-contact layer in the via opening on the first portion of the current spreading layer, the sidewalls in the dielectric layer, and on at least a portion of the dielectric layer.Type: GrantFiled: March 5, 2021Date of Patent: December 19, 2023Assignee: Lumileds LLCInventors: Erik William Young, Rajat Sharma, Dennis Scott
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Patent number: 11789341Abstract: An illumination system can include a dual junction light-emitting diode (LED) array including first and second junctions that extend in a plane. The first junction can emit first light from a plurality of first light-emitting areas that are separated by first boundaries. The second junction can be disposed on the first junction such that the first light passes through the second junction. The second junction can emit second light from a plurality of second light-emitting areas. The second light-emitting areas can be separated by second boundaries that correspond in a one-to-one correspondence to the first boundaries. The second boundaries can be offset in the plane from the corresponding first boundaries. The offset can help reduce or eliminate dark bands in the combined first and second light, which could be present if the second boundaries were not offset from the first boundaries.Type: GrantFiled: November 7, 2022Date of Patent: October 17, 2023Assignee: Lumileds LLCInventors: Arjen Gerben Van der Sijde, Nicola Bettina Pfeffer, Erik William Young
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Patent number: 11784286Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: GrantFiled: December 7, 2022Date of Patent: October 10, 2023Assignee: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
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Patent number: 11735695Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A current spreading layer is on the P-type layer, the current spreading layer having a first portion and a second portion; a hard mask layer above the second portion of the current spreading layer, the hard mask layer comprising sidewalls defining a hard mask opening; a liner layer conformally-deposited in the hard mask opening above the first portion of the current spreading layer and on the sidewalls of the hard mask layer; a P-metal material plug on the liner layer; a passivation layer on the hard mask layer; and an under bump metallization layer on the passivation layer.Type: GrantFiled: March 5, 2021Date of Patent: August 22, 2023Assignee: Lumileds LLCInventors: Erik William Young, Rajat Sharma, Dennis Scott
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Publication number: 20230155070Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Toni Lopez, Isaac Wildeson, Erik William Young
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Publication number: 20230154968Abstract: Described are light emitting diode (LED) devices having a patterned dielectric layer on a substrate and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The patterned dielectric layer comprises a first plurality of features and a second plurality of features, where the second plurality of features has a height larger than the height of the first plurality of features. The second plurality of features aligns with the cathode layer of the trench.Type: ApplicationFiled: November 7, 2022Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Toni Lopez, Isaac Wildeson, Erik William Young
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Publication number: 20230154970Abstract: A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.Type: ApplicationFiled: January 19, 2023Publication date: May 18, 2023Applicant: Lumileds LLCInventors: Ashish Tandon, Rajat Sharma, Joseph Flemish, Andrei Papou, Wen Yu, Erik William Young, Yu-Chen Shen, Luke Gordon
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Publication number: 20230147783Abstract: An illumination system can include a dual junction light-emitting diode (LED) array including first and second junctions that extend in a plane. The first junction can emit first light from a plurality of first light-emitting areas that are separated by first boundaries. The second junction can be disposed on the first junction such that the first light passes through the second junction. The second junction can emit second light from a plurality of second light-emitting areas. The second light-emitting areas can be separated by second boundaries that correspond in a one-to-one correspondence to the first boundaries. The second boundaries can be offset in the plane from the corresponding first boundaries. The offset can help reduce or eliminate dark bands in the combined first and second light, which could be present if the second boundaries were not offset from the first boundaries.Type: ApplicationFiled: November 7, 2022Publication date: May 11, 2023Inventors: Arjen Gerben Van der Sijde, Nicola Bettina Pfeffer, Erik William Young
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Publication number: 20230133315Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.Type: ApplicationFiled: October 25, 2022Publication date: May 4, 2023Applicant: Lumileds LLCInventors: Toni Lopez, Erik William Young, Rajiv Pathak
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Publication number: 20230104020Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: ApplicationFiled: December 7, 2022Publication date: April 6, 2023Applicant: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
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Patent number: 11569415Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: GrantFiled: March 5, 2021Date of Patent: January 31, 2023Assignee: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo
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Publication number: 20220285425Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.Type: ApplicationFiled: March 5, 2021Publication date: September 8, 2022Applicant: Lumileds LLCInventors: Erik William Young, Dennis Scott, Rajat Sharma, Toni Lopez, Yu-Chen Shen
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Publication number: 20220140198Abstract: Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. A patterned transparent conductive oxide layer is on the top surface of the mesa. The patterned transparent conductive oxide layer has a first portion with a first thickness and a second portion with a second thickness, the second thickness less than the first thickness. Optical loss of the LED is reduced in the thinned region of the transparent conductive oxide layer.Type: ApplicationFiled: March 5, 2021Publication date: May 5, 2022Applicant: Lumileds LLCInventors: Jeffrey DiMaria, Erik William Young
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Publication number: 20210288223Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A current spreading layer is on the P-type layer, the current spreading layer having a first portion and a second portion; a hard mask layer above the second portion of the current spreading layer, the hard mask layer comprising sidewalls defining a hard mask opening; a liner layer conformally-deposited in the hard mask opening above the first portion of the current spreading layer and on the sidewalls of the hard mask layer; a P-metal material plug on the liner layer; a passivation layer on the hard mask layer; and an under bump metallization layer on the passivation layer.Type: ApplicationFiled: March 5, 2021Publication date: September 16, 2021Applicant: Lumileds LLCInventors: Erik William Young, Rajat Sharma, Dennis Scott
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Publication number: 20210288222Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. The plurality of mesas defines a matrix of pixels, the matrix of pixels is surrounded by a common electrode comprising a plurality of semiconductor stacks surrounded by a conducting metal. Each of the semiconductor stacks is inactive, and in one or more embodiments, comprises at least one layer of GaN.Type: ApplicationFiled: March 5, 2021Publication date: September 16, 2021Applicant: Lumileds LLCInventors: Erik William Young, Rajat Sharma, Dennis Scott
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Publication number: 20210288212Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A multilayer composite film is on the P-type layer, the multilayer composite film comprising: a current spreading layer on the P-type layer, the current spreading layer having a first portion and a second portion; a dielectric layer on the second portion of the current spreading layer; a via opening defined by sidewalls in the dielectric layer and the first portion of the current spreading layer; and a P-contact layer in the via opening on the first portion of the current spreading layer, the sidewalls in the dielectric layer, and on at least a portion of the dielectric layer.Type: ApplicationFiled: March 5, 2021Publication date: September 16, 2021Applicant: Lumileds LLCInventors: Erik William Young, Rajat Sharma, Dennis Scott
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Publication number: 20210288214Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A hard mask layer is above the semiconductor layers, the hard mask layer having a plurality of openings therein, each partially filled with a liner layer and partially filled with a P-metal material plug, the P-metal material plug having a width; and a passivation film is on the hard mask layer, the passivation film having a plurality of passivation film openings therein defining a width, the width of each passivation film opening being less than the width of a combination of the P-metal material plug and the liner layer.Type: ApplicationFiled: March 5, 2021Publication date: September 16, 2021Applicant: Lumileds LLCInventors: Erik William Young, Yu-Chen Shen, Chee Yin Foo, Yeow Meng Teo