Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Abstract: Methods of forming micro-electromechanical device include a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitive to voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.

Abstract: A microelectromechanical gyroscope that includes a first mass oscillatable according to a first axis; an inertial sensor, including a second mass, drawn along by the first mass and constrained so as to oscillate according to a second axis, in response to a rotation of the gyroscope; a driving device coupled to the first mass so as to form a feedback control loop and configured to maintain the first mass in oscillation at a resonance frequency; and an open-loop reading device coupled to the inertial sensor for detecting displacements of the second mass according to the second axis. The driving device includes a read signal generator for supplying to the inertial sensor at least one read signal having the form of a square-wave signal of amplitude that sinusoidally varies with the resonance frequency.

Abstract: A detection circuit is provided with a differential capacitive sensor and with an interface circuit having a first sense input and a second sense input, electrically connected to the differential capacitive sensor. Provided in the interface circuit are: a sense amplifier connected at input to the first sense input and to the second sense input and supplying an output signal related to a capacitive unbalancing of the differential capacitive sensor; and a common-mode control circuit, connected to the first sense input and to the second sense input and configured to control a common-mode electrical quantity present on the first sense input and on the second sense input. The common-mode control circuit is of a totally passive type and is provided with a capacitive circuit, which is substantially identical to an equivalent electrical circuit of the differential capacitive sensor and is driven with a driving signal in phase opposition with respect to a read signal supplied to the differential capacitive sensor.

Abstract: A microelectromechanical gyroscope that includes a first mass oscillatable according to a first axis; an inertial sensor, including a second mass, drawn along by the first mass and constrained so as to oscillate according to a second axis, in response to a rotation of the gyroscope; a driving device coupled to the first mass so as to form a feedback control loop and configured to maintain the first mass in oscillation at a resonance frequency; and an open-loop reading device coupled to the inertial sensor for detecting displacements of the second mass according to the second axis. The driving device includes a read signal generator for supplying to the inertial sensor at least one read signal having the form of a square-wave signal of amplitude that sinusoidally varies with the resonance frequency.

Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.

Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.

Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitive to voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

Abstract: A microelectromechanical gyroscope that includes a first mass oscillatable according to a first axis; an inertial sensor, including a second mass, drawn along by the first mass and constrained so as to oscillate according to a second axis, in response to a rotation of the gyroscope; a driving device coupled to the first mass so as to form a feedback control loop and configured to maintain the first mass in oscillation at a resonance frequency; and an open-loop reading device coupled to the inertial sensor for detecting displacements of the second mass according to the second axis. The driving device includes a read signal generator for supplying to the inertial sensor at least one read signal having the form of a square-wave signal of amplitude that sinusoidally varies with the resonance frequency.

Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.

Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

Abstract: Described herein is a method for testing a microelectromechanical device provided with a microstructure having a fixed structure and a movable mass, which is capacitively coupled to the fixed structure and mechanically connected thereto so as to be movable between a rest position and at least one position of maximum extension. The method envisages: applying a test voltage between the movable mass and the fixed structure so as to set up an electrostatic force between them and displace the movable mass into the position of maximum extension; keeping the movable mass in the position of maximum extension for a time interval; releasing the movable mass from the position of maximum extension; and detecting a current position of the movable mass.

Abstract: A microelectromechanical gyroscope having a microstructure that includes a first mass and a second mass, wherein the first mass is oscillatable according to a first axis and the second mass is constrained to the first mass so as to be drawn along by the first mass according to the first axis and to oscillate according to a second axis, in response to a rotation of the microstructure, a driving device coupled to the microstructure to maintain the first mass in oscillation at the driving frequency, and a reading device that detects displacements of the second mass according to the second axis. The gyroscope is provided with a self-test actuation system coupled to the second mass for applying an electrostatic force at the driving frequency so as to move the second mass according to the second axis.

Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.