Abstract: The present invention relates to the field of chemical detection. More specifically, the invention provides devices that can detect various target analytes (e.g., chemicals and/or biological materials) present in an environment by adsorption or absorption of the target analyte(s) to or in a chemical sensing material such that an electrical parameter (e.g., capacitance, resistance, etc.) of the chemical sensing material is altered in a manner detectable by circuitry associated with the sensing electrode pair coated with the chemical sensing material. Here, the sensing electrode pair(s) of the devices of the invention are suspended over an inert substrate via one or more posts used to space the electrodes from the substrate.

Abstract: The present invention relates to the field of chemical detection. More specifically, the invention provides devices that can detect various target analytes (e.g., chemicals and/or biological materials) present in an environment by adsorption or absorption of the target analyte(s) to or in a chemical sensing material such that an electrical parameter (e.g., capacitance, resistance, etc.) of the chemical sensing material is altered in a manner detectable by circuitry associated with the sensing electrode pair coated with the chemical sensing material. Here, the sensing electrode pair(s) of the devices of the invention are suspended over an inert substrate via one or more posts used to space the electrodes from the substrate.

Abstract: In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

Abstract: In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

Abstract: In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

Abstract: In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.