Abstract: The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

Abstract: A method for treating a region of an optoelectronic device (Pix) further including a substrate adjacent to the region to be treated. The optoelectronic device includes, in the region to be treated, programmable elements configured to be modified when they are exposed to a laser beam. The method includes the exposure of at least one of the programmable elements to the laser beam focused through the substrate.

Abstract: The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.

Abstract: An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.

Abstract: An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

Abstract: Disclosed is a method for manufacturing a set of light emitters each including a light emitting structure and an electrical contact, the method including the steps of:—providing a wafer carrying a set of light emitting structures, each emitting structure being configured to emit a first radiation when an electric current flows through the emitting structure, and—manufacturing, for each emitting structure, an electric contact, the contact being electrically insulated from each other. The manufacturing includes:—forming a first set of at least two first contacts and at least one conductor, the contact of the first set being electrically connected to each other first contact of the one or the conductor,—injecting, for each contact belonging to the first set, a electric current through the contact and the corresponding emitting structure, and—observing a radiation emitted in response to the injection.

Abstract: There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

Abstract: The disclosure relates to an optoelectronic device comprising: a plurality of separate first electrodes that extend longitudinally in parallel to an axis A1, each first electrode being formed of a longitudinal conductive portion and a conductive nucleation strip, the longitudinal conductive portion having an electrical resistance lower than that of the conductive nucleation strip; a plurality of diodes; at least one intermediate insulating layer covering the first electrodes; and a plurality of separate second electrodes in the form of transparent conductive strips that extend longitudinally in contact with second doped portions, and are electrically insulated from the first electrodes by means of the intermediate insulating layer, parallel to an axis A2, the axis A2 not being parallel to axis A1.

Abstract: An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

Abstract: The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.

Abstract: There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

Abstract: The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

Abstract: An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.

Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: The disclosure relates to an optoelectronic device comprising: a plurality of separate first electrodes that extend longitudinally in parallel to an axis A1, each first electrode being formed of a longitudinal conductive portion and a conductive nucleation strip, the longitudinal conductive portion having an electrical resistance lower than that of the conductive nucleation strip; a plurality of diodes; at least one intermediate insulating layer covering the first electrodes; and a plurality of separate second electrodes in the form of transparent conductive strips that extend longitudinally in contact with second doped portions, and are electrically insulated from the first electrodes by means of the intermediate insulating layer, parallel to an axis A2, the axis A2 not being parallel to axis A1.

Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.

Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.