Patents by Inventor Erwan Dornel

Erwan Dornel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210366979
    Abstract: An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.
    Type: Application
    Filed: February 1, 2019
    Publication date: November 25, 2021
    Inventors: Ivan-Christophe ROBIN, Matthieu CHARBONNIER, Xavier HUGON, Erwan DORNEL
  • Publication number: 20210366983
    Abstract: The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.
    Type: Application
    Filed: June 19, 2019
    Publication date: November 25, 2021
    Inventors: Olivier JEANNIN, Erwan DORNEL, Eric POURQUIER, Tiphaine DUPONT
  • Publication number: 20210265534
    Abstract: There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.
    Type: Application
    Filed: June 19, 2019
    Publication date: August 26, 2021
    Inventors: Olivier JEANNIN, Erwan DORNEL, Eric POURQUIER, Tiphaine DUPONT
  • Publication number: 20210257512
    Abstract: The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.
    Type: Application
    Filed: June 19, 2019
    Publication date: August 19, 2021
    Inventors: Olivier JEANNIN, Erwan DORNEL, Eric POURQUIER, Tiphaine DUPONT
  • Publication number: 20210193639
    Abstract: An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.
    Type: Application
    Filed: June 24, 2019
    Publication date: June 24, 2021
    Applicant: Aledia
    Inventors: Ivan-Christophe Robin, Erwan Dornel, Frederic Mercier
  • Patent number: 10937777
    Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: March 2, 2021
    Assignee: Aledia
    Inventors: Christophe Bouvier, Erwan Dornel, Xavier Hugon, Carlo Cagli
  • Patent number: 10923528
    Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: February 16, 2021
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Sylvia Scaringella, Erwan Dornel, Philippe Gibert, Philippe Gilet, Xavier Hugon, Fabienne Goutaudier
  • Publication number: 20200335548
    Abstract: The disclosure relates to an optoelectronic device comprising: a plurality of separate first electrodes that extend longitudinally in parallel to an axis A1, each first electrode being formed of a longitudinal conductive portion and a conductive nucleation strip, the longitudinal conductive portion having an electrical resistance lower than that of the conductive nucleation strip; a plurality of diodes; at least one intermediate insulating layer covering the first electrodes; and a plurality of separate second electrodes in the form of transparent conductive strips that extend longitudinally in contact with second doped portions, and are electrically insulated from the first electrodes by means of the intermediate insulating layer, parallel to an axis A2, the axis A2 not being parallel to axis A1.
    Type: Application
    Filed: December 21, 2018
    Publication date: October 22, 2020
    Inventors: Vincent Beix, Erwan Dornel
  • Publication number: 20190326270
    Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.
    Type: Application
    Filed: July 3, 2019
    Publication date: October 24, 2019
    Applicant: Aledia
    Inventors: Christophe Bouvier, Erwan Dornel, Xavier Hugon, Carlo Cagli
  • Patent number: 10418506
    Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: September 17, 2019
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Patent number: 10411161
    Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: September 10, 2019
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Publication number: 20190165040
    Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: May 30, 2019
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Sylvia Scaringella, Erwan Dornel, Philippe Gibert, Philippe Gilet, Xavier Hugon, Fabienne Goutaudier
  • Patent number: 10153399
    Abstract: An optoelectronic device including semiconductor elements, each semiconductor element resting on a carrier through an aperture formed in a portion at least one first part of which is insulating and covers at least partially the carrier, the height of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height to the smallest diameter of the aperture being higher than or equal to 0.5 and lower than or equal to 10.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: December 11, 2018
    Assignee: Aledia
    Inventors: Erwan Dornel, Benoît Amstatt, Philippe Gilet
  • Publication number: 20180261584
    Abstract: A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
    Type: Application
    Filed: September 9, 2016
    Publication date: September 13, 2018
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Publication number: 20180254382
    Abstract: A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.
    Type: Application
    Filed: September 9, 2016
    Publication date: September 6, 2018
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Erwan Dornel
  • Patent number: 9960205
    Abstract: An optoelectronic device including a semiconductor substrate including first and second opposing faces, a first set of first light-emitting diodes resting on a first portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a first electrode covering each first light-emitting diode, a first conductive portion insulated from the substrate, extending through the substrate and connected to the first electrode; a second set of second light-emitting diodes resting on a second portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a second electrode covering each second light-emitting diode, a second conductive portion insulated from the substrate and connected to the second electrode, and a first conductive element connecting the first conductive portion to the second portion of the substrate on the side of the second face.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: May 1, 2018
    Assignee: Aledia
    Inventors: Christophe Bouvier, Erwan Dornel
  • Patent number: 9876142
    Abstract: An optoelectronic device including a support having a first face; a first set of first light-emitting diodes having first wire-like, conical or frustoconical semiconductor elements, each resting on a second face of a first contact stud, each first contact stud including, in addition, a third face opposite the second face; and a first conductive layer connecting the first contact studs and extending at least over part of the second face or the third face of each first contact stud, the first conductive layer and/or the first contact studs resting on the support.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: January 23, 2018
    Assignee: Aledia
    Inventors: Christophe Bouvier, Erwan Dornel
  • Patent number: 9854632
    Abstract: An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: December 26, 2017
    Assignee: Aledia
    Inventors: Frédéric Mercier, Erwan Dornel, Xavier Hugon
  • Publication number: 20170223784
    Abstract: An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set.
    Type: Application
    Filed: July 8, 2015
    Publication date: August 3, 2017
    Applicant: Aledia
    Inventors: Frédéric Mercier, Erwan Dornel, Xavier Hugon
  • Patent number: 9659781
    Abstract: A method includes forming a shallow trench isolation (STI) region in a substrate, the STI region comprising an etch stop layer; etching the STI region by a first etch to the etch stop layer to form a recess in the STI region; and forming a floating gate, the floating gate comprising a portion that extends into the recess in the STI region, wherein the etch stop layer separates the portion of the floating gate that extends into the recess in the STI region from the substrate.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: May 23, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Erwan Dornel