Abstract: A method of use for a lithographic tool includes scanning a substrate relative to a first micro-lens array (MLA) and a second MLA each having rows of lenslets. The first MLA has functional lenslets and extra lenslets and the scanning includes delivering light through the lenslets of the first MLA and second MLA to the substrate. The delivering includes delivering light through the functional lenslets to form a pattern on the substrate, the pattern having gaps caused by a positional or rotational misalignment between the functional lenslets of the first MLA and the second MLA. The delivering also includes delivering light through the extra lenslets to fill the gaps in the pattern.

Abstract: Systems and methods are disclosed for stabilizing an optical column. One system can include an optical column; a frame configured to support the optical column, the frame having a first coefficient of thermal expansion (CTE); and a subframe configured to be coupled to the optical column in at least two places by a first anchor and a second anchor to stabilize the optical column against a displacement or a rotation caused by thermal expansion in the frame or the optical column, the subframe having a second CTE lower than the first CTE.

Abstract: A method for improved sequencing of light delivery in a lithographic process includes determining a sequence of intensities of light to be delivered that includes an interval within the sequence of intensities where substantially no light is delivered to the substrate and delivering light to a substrate by a light source utilizing a digital mirror device (DMD) according to the sequence of intensities.

Abstract: Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.

Abstract: Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.

Abstract: Quantum network nodes use light from a laser to stimulate emission of single photons. A detection station detects arrival of the photons from the quantum network nodes at a photon arrival detector. In time slots between single photon emissions, the quantum network node supply light from the laser to the detection station. The detection station measures a phase differences between light from a reference laser and the light received from different quantum network nodes in said time slots. The detection station has optical phase and/or frequency modulators between the optical inputs for light from the quantum network nodes and the photon arrival detector.

Abstract: Quantum network nodes use light from a laser to stimulate emission of single photons. A detection station detects arrival of the photons from the quantum network nodes at a photon arrival detector. In time slots between single photon emissions, the quantum network node supply light from the laser to the detection station. The detection station measures a phase differences between light from a reference laser and the light received from different quantum network nodes in said time slots. The detection station has optical phase and/or frequency modulators between the optical inputs for light from the quantum network nodes and the photon arrival detector.

Abstract: This document relates to an optical detection method and system for detecting a spatial feature on or below a surface of a substrate. The method includes providing, using an optical radiation source, a beam of optical radiation; directing the optical radiation beam using beam-directing optics towards the substrate surface for impinging the optical radiation beam on the surface; receiving, by a focusing objective, a returning portion of the optical radiation that is returned by the substrate surface, said returning portion including a scattered portion that is scattered by the substrate; and providing a reference radiation having an equal phase with the returning portion of the optical radiation.

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

Abstract: A subsurface inspection method and system (1) for detecting internal defects (2) and/or overlay/misalignment in a semiconductor wafer (4). A measurement laser beam (6) is split into a laser probe beam (8) and a reference laser beam (10). The laser probe beam is transmitted to a wafer surface (12). A laser excitation pulse (14) is transmitted impinging the wafer surface for causing an ultrasound wave propagating through the wafer and causing wafer surface movement when reflected back from an encountered subsurface feature. The laser probe beam and the reference laser beam are recombined in an optical interference detector (18) and the subsurface feature inside the wafer is detected by a deviation of a detected phase difference. The laser probe beam and the reference laser beam are guided through an optic (20) prior to arriving at the optical interference detector.

Abstract: According to an aspect of the invention, there is provided a mirror structure for adaptive optics devices, characterized in that it comprises: an elastically deformable layer in response to an applied force, said deformable layer comprising a central portion reflective to said an incident light beam (F); a support substrate positioned spaced with respect to said deformable layer; a spacer element connected to said elastically deformable layer and support substrate and positioned there between, said spacer element being arranged so that the separation distance between said first and second inner surface is in the range between 2 and 100 micron; an inner chamber at least partially defined by said first and substrate and by said spacer element, said inner chamber containing a pressurized gas (G); an actuator system capable of causing a deformation of said central portion counteracting the pressure of said pressurized gas; wherein, in use, said central portion is deformed according to profiles such as to control

Abstract: This document describes a method of determining an overlay error during manufacturing of a multilayer semiconductor device. Manufacturing of the semiconductor device comprises forming a stack of material layers comprising depositing of at least two subsequent patterned layers of semiconductor material, the patterned layers comprising a first patterned layer having a first marker element and a second patterned layer having a second marker element. The determining of the overlay error comprises determining relative positions of the first and second marker element in relation to each other, such as to determine the overlay error between the first patterned layer and the second patterned layer. In addition an imaging step is performed on at least one of said first and second patterned layer, for determining relative positions of the respective first or second marker element and a pattern feature of a device pattern comprised by said respective first and second patterned layer.

Abstract: A multi-beam laser cavity unit (10) comprises a laser crystal (13) and lens array (14) disposed in the laser cavity (LC). The lens array comprises an integral piece formed by a plurality of interconnected lenses. Each lens (14a) is configured to form a respective closed optical path (OPa) along the length (Z) of the laser cavity (LC) between the cavity mirrors (11,12) through the laser crystal (13) corresponding to a cavity mode for generating one (LBa) of the plurality of parallel laser beams (LB). The cavity unit (10) can be comprised in a laser system receiving pump light (PL) from a plurality of light sources. For example, the system can be used in a maskless patterning device.

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

Abstract: According to an aspect of the invention, there is provided a mirror structure for adaptive optics devices, characterized in that it comprises: an elastically deformable layer in response to an applied force, said deformable layer comprising a central portion reflective to said an incident light beam (F); a support substrate positioned spaced with respect to said deformable layer; a spacer element connected to said elastically deformable layer and support substrate and positioned there between, said spacer element being arranged so that the separation distance between said first and second inner surface is in the range between 2 and 100 micron; an inner chamber at least partially defined by said first and substrate and by said spacer element, said inner chamber containing a pressurized gas (G); an actuator system capable of causing a deformation of said central portion counteracting the pressure of said pressurized gas; wherein, in use, said central portion is deformed according to profiles such as to control

Abstract: This document describes a method of determining an overlay error during manufacturing of a multilayer semiconductor device. Manufacturing of the semiconductor device comprises forming a stack of material layers comprising depositing of at least two subsequent patterned layers of semiconductor material, the patterned layers comprising a first patterned layer having a first marker element and a second patterned layer having a second marker element. The determining of the overlay error comprises determining relative positions of the first and second marker element in relation to each other, such as to determine the overlay error between the first patterned layer and the second patterned layer. In addition an imaging step is performed on at least one of said first and second patterned layer, for determining relative positions of the respective first or second marker element and a pattern feature of a device pattern comprised by said respective first and second patterned layer.

Abstract: The invention is directed at an exposure head for use in an exposure apparatus for illuminating a surface, the exposure head comprising one or more radiative sources for providing one or more beams, an optical scanning unit arranged for receiving the one or more beams and for directing the beams towards the surface for impinging each of the beams on an impingement spot, a rotation actuating unit connected to the optical scanning unit for at least partially rotating the optical scanning unit, wherein the impingement spots of the one or more beams are scanned across the surface by said at least partial rotation of the optical scanning unit, wherein the optical scanning unit comprises a transmissive element including one or more facets for receiving the one or more beams and for outputting the beams after conveying thereof through the transmissive element, for displacing the beams upon said rotation of the transmissive element for enabling the scanning of the impingement spots.

Abstract: A radiation sensor device is disclosed for use with a radiation source, capable of emitting radiation with photon energies larger than the work function of the target comprising a target plate to be impacted by the radiation to generate photo-electrons, the target plate being electrically isolated from a shielding electrode. The shielding electrode is arranged to collect energy-filtered photo-electrons from the target plate, using an electrostatic barrier for the filtering. The target plate is constructed of a carbon material. A current measurement device is operative to keep the target plate at a preset voltage difference with respect to the shielding electrode and measure a photo-electron deficit current as a result of radiation impact on the target plate.

Abstract: A multi-beam laser cavity unit (10) comprises a laser crystal (13) and lens array (14) disposed in the laser cavity (LC). The lens array comprises an integral piece formed by a plurality of interconnected lenses. Each lens (14a) is configured to form a respective closed optical path (OPa) along the length (Z) of the laser cavity (LC) between the cavity mirrors (11,12) through the laser crystal (13) corresponding to a cavity mode for generating one (LBa) of the plurality of parallel laser beams (LB). The cavity unit (10) can be comprised in a laser system receiving pump light (PL) from a plurality of light sources. For example, the system can be used in a maskless patterning device.

Abstract: A device having a waveguide formed of a continuous body of material that is transparent to radiation that passes through the waveguide, wherein the body has an input surface and an output surface, and a cooler configured to cool the input surface and/or the output surface. An exposure apparatus having a programmable patterning device that comprises a plurality of radiation emitters, configured to provide a plurality of radiation beams; and a projection system, comprising a stationary part and a moving part, configured to project the plurality of radiation beams onto locations on a target that are selected based on a pattern, wherein at least one of the radiation emitters comprises a waveguide configured to output a radiation beam that comprises unpolarized and/or circularly polarized radiation.