Abstract: A semiconductor die package. The semiconductor die package includes a premolded clip structure assembly having a clip structure, a semiconductor die attached to the clip structure, and a first molding material covering at least a portion of the clip structure and the semiconductor die. The semiconductor die package also includes a leadframe structure having a die attach pad, where the leadframe structure is attached to premolded clip structure assembly.

Abstract: A semiconductor die package. The semiconductor die package includes a premolded clip structure assembly having a clip structure, a semiconductor die attached to the clip structure, and a first molding material covering at least a portion of the clip structure and the semiconductor die. The semiconductor die package also includes a leadframe structure having a die attach pad, where the leadframe structure is attached to premolded clip structure assembly.

Abstract: A semiconductor die package. The semiconductor die package includes a premolded clip structure assembly having a clip structure, a semiconductor die attached to the clip structure, and a first molding material covering at least a portion of the clip structure and the semiconductor die. The semiconductor die package also includes a leadframe structure having a die attach pad, where the leadframe structure is attached to premolded clip structure assembly.

Abstract: A clip structure for a semiconductor package is disclosed. The clip structure includes a major portion, at least one pedestal extending from the major portion, a downset portion, and a lead portion. The downset portion is between the lead portion and the major portion. The clip structure can be used in a MLP (micro-leadframe package).

Abstract: A clip structure and semiconductor die package. The clip structure includes a first portion and a second portion, with a connecting structure located between the first and second portion. The clip structure is substantially planar. The semiconductor die package includes a semiconductor die located between a leadframe structure and a clip structure. Slots are formed within the molding material covering portions of the semiconductor die package. The slots are located between a first portion and the second portion of the clip structure, and the slot overlap with the semiconductor die.

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract: A semiconductor die package. The semiconductor die package includes a premolded clip structure assembly having a clip structure, a semiconductor die attached to the clip structure, and a first molding material covering at least a portion of the clip structure and the semiconductor die. The semiconductor die package also includes a leadframe structure having a die attach pad, where the leadframe structure is attached to premolded clip structure assembly.

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract: A folded frame carrier has a die attach pad (DAP) 30 and one or more folded edges 32, 33, 34, 35. Each folded edge has one or more studs 36 and each stud has a trapezoidal tip. The folded frame carrier may be made of single gauge copper or copper alloy. Multiple folded frame carriers may be formed between opposite rails of a lead frame. The folded edges are cut with a relief groove. The tips are formed in edges of the DAP and then the tips are folded upright. The tips provide electrical connection to the terminal on the rear surface of a power semiconductor mounted on the DAP.

Abstract: A clip structure for a semiconductor package is disclosed. The clip structure includes a major portion, at least one pedestal extending from the major portion, a downset portion, and a lead portion. The downset portion is between the lead portion and the major portion. The clip structure can be used in a MLP (micro-leadframe package).

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract: A clip structure for a semiconductor package is disclosed. The clip structure includes a major portion, at least one pedestal extending from the major portion, a downset portion, and a lead portion. The downset portion is between the lead portion and the major portion. The clip structure can be used in a MLP (micro-leadframe package).

Abstract: A packaging assembly for semiconductor devices and a method for making such packaging is described. The invention provides a non-Pb bump design during a new flip-chip method of packaging. The design uses special conductive materials in a stud form, rather than a solder ball containing Pb. This configuration maintains a desirable solder thickness between the die and the leadframe and forms a high standoff by restricting solder wettabilty on the leadframe side. This configuration also absorbs any stress and protects the die from cracking. The invention also provides methods for making such semiconductor packages.

Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract: A packaging assembly for semiconductor devices and a method for making such packaging is described. The invention provides a non-Pb bump design during a new flip-chip method of packaging. The design uses special conductive materials in a stud form, rather than a solder ball containing Pb. This configuration maintains a desirable solder thickness between the die and the leadframe and forms a high standoff by restricting solder wettabilty on the leadframe side. This configuration also absorbs any stress and protects the die from cracking. The invention also provides methods for making such semiconductor packages.

Abstract: A method for forming a semiconductor die package is disclosed. In one embodiment, the method includes forming a semiconductor die comprising a semiconductor device. A plurality of copper bumps is formed on the semiconductor die using a plating process. An adhesion layer is formed on each of the copper bumps, and a noble metal layer is formed on each of the copper bumps.

Abstract: A method for forming a semiconductor die package is disclosed. In one embodiment, the method includes forming a semiconductor die comprising a semiconductor device. A plurality of copper bumps is formed on the semiconductor die using a plating process. An adhesion layer is formed on each of the copper bumps, and a noble metal layer is formed on each of the copper bumps.