Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: A method of fabricating a circuit comprising an nMOSFET includes providing a substrate, depositing a strain-inducing material comprising germanium over the substrate, and integrating a pMOSFET on the substrate, the pMOSFET comprising a strained channel having a surface roughness of less than 1 nm. The strain-inducing material is proximate to and in contact with the pMOSFET channel, the strain in the pMOSFET channel is induced by the strain-inducing material, and a source and a drain of the pMOSFET are at least partially formed in the strain-inducing material.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.

Abstract: Initiation conditions and strain techniques are described that enable forming high quality GaAsP semiconductor material on an SiGe semiconductor material with low threading defect density. Suitable initiation conditions include exposing the SiGe semiconductor material to a gas comprising arsenic. A tensilely-strained region may be formed in the semiconductor structure between regions of GaAsP semiconductor material and SiGe semiconductor material.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.

Abstract: An apparatus is provided comprising one or more matrices contained within a shell, wherein the one or more matrices comprise between 1-99 wt % of a water-insoluble host material and between 1-99 wt % of a guest substrate, wherein the guest substrate comprises between 1-100 wt % of one or more disinfectant compounds or one or more beneficial compounds; and wherein the shell comprises a water-insoluble shell polymer, and one or more apertures. The host material may be a polymer. The apparatus is used for treating an aqueous medium with one or more disinfectant compounds or one or more beneficial compounds.

Abstract: A method includes attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer. The second wafer comprises a first region including a material different from silicon. The method also includes forming devices in the first region or in a second region of the combined wafer having a material different from silicon.

Abstract: An apparatus for water filtration includes a base a filtration receptacle coupled to the base and a carafe removably coupled to the base. The filtration receptacle includes a water inlet and a water outlet. The filtration receptacle includes a pleated filter positioned between the water inlet and the water outlet. The pleated filter has a pleat face characterized by a surface having a plurality of peaks and a plurality of valleys, such that the surface is disposed in a plurality of planes. The filtration receptacle is structurally configured to maintain the pleated filter in an orientation wherein the pleat face of the pleated filter transverses a water-flow path extending from the water inlet to the water outlet. The filtration receptacle is further configured to induce water-flow along the water-flow path by at least one of a receptacle orientation and a receptacle geometry. The carafe includes an inlet coupled to the water outlet in the filtration receptacle.

Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

Abstract: In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.