Patents by Inventor Eugene J. O'Sullivan

Eugene J. O'Sullivan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming magnetic microelectromechanical inductive components
    Patent number: 9321634
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: April 26, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Planar inductors with closed magnetic loops
    Patent number: 9324495
    Abstract: A planar closed-magnetic-loop inductor and a method of fabricating the inductor are described. The inductor includes a first material comprising a cross-sectional shape including at least four segments, at least one of the at least four segments including a first edge and a second edge on opposite sides of an axial line through the at least one of the at least four segments. The first edge and the second edge are not parallel.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: April 26, 2016
    Assignee: International Business Machines Corporation
    Inventors: Robert E. Fontana, Jr., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • METHOD OF FORMING AN ON-PITCH SELF-ALIGNED HARD MASK FOR CONTACT TO A TUNNEL JUNCTION USING ION BEAM ETCHING
    Publication number: 20150372225
    Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.
    Type: Application
    Filed: June 20, 2014
    Publication date: December 24, 2015
    Inventors: Michael C. Gaidis, Erwan Gapihan, Rohit Kilaru, Eugene J. O'Sullivan
  • Forming magnetic microelectromechanical inductive components
    Patent number: 9193584
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: November 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Forming magnetic microelectromechanical inductive components
    Patent number: 9105841
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: August 11, 2015
    Assignee: International Business Machines Corporation
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Selective nanotube growth inside vias using an ion beam
    Patent number: 9099537
    Abstract: A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: August 4, 2015
    Assignee: International Business Machines Corporation
    Inventors: Katherina E. Babich, Alessandro C. Callegari, John J. Connolly, Eugene J. O'Sullivan
  • MAGNETIC MULTILAYER STRUCTURE
    Publication number: 20150200231
    Abstract: A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
    Type: Application
    Filed: January 15, 2014
    Publication date: July 16, 2015
    Applicant: International Business Machines Corporation
    Inventors: Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • Inductor with stacked conductors
    Patent number: 9064628
    Abstract: A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: June 23, 2015
    Assignee: International Business Machines Corporation
    Inventors: Robert E. Fontana, Jr., Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • FORMING MAGNETIC MICROELECTROMECHANICAL INDUCTIVE COMPONENTS
    Publication number: 20150140687
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 21, 2015
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • FORMING MAGNETIC MICROELECTROMECHANICAL INDUCTIVE COMPONENTS
    Publication number: 20150140686
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 21, 2015
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • PLANAR INDUCTORS WITH CLOSED MAGNETIC LOOPS
    Publication number: 20150064362
    Abstract: A planar closed-magnetic-loop inductor and a method of fabricating the inductor are described. The inductor includes a first material comprising a cross-sectional shape including at least four segments, at least one of the at least four segments including a first edge and a second edge on opposite sides of an axial line through the at least one of the at least four segments. The first edge and the second edge are not parallel.
    Type: Application
    Filed: October 2, 2013
    Publication date: March 5, 2015
    Applicant: International Business Machines Corporation
    Inventors: Robert E. Fontana, JR., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • PLANAR INDUCTORS WITH CLOSED MAGNETIC LOOPS
    Publication number: 20150061815
    Abstract: A planar closed-magnetic-loop inductor and a method of fabricating the inductor are described. The inductor includes a first material comprising a cross-sectional shape including at least four segments, at least one of the at least four segments including a first edge and a second edge on opposite sides of an axial line through the at least one of the at least four segments. The first edge and the second edge are not parallel.
    Type: Application
    Filed: September 4, 2013
    Publication date: March 5, 2015
    Applicant: International Business Machines Corporation
    Inventors: Robert E. Fontana, JR., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • Electroless plated material formed directly on metal
    Patent number: 8956975
    Abstract: A method for forming magnetic conductors includes forming a metal structure on a substrate. Plating surfaces are prepared on the metal structure for electroless plating by at least one of: masking surfaces of the metal structure to prevent electroless plating on masked surfaces and/or activating a surface of the metal structure. Magnetic material is electrolessly plated directly on the plating surfaces to form a metal and magnetic material structure.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: February 17, 2015
    Assignee: International Business Machines Corporation
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Pillar-based interconnects for magnetoresistive random access memory
    Patent number: 8884387
    Abstract: A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: November 11, 2014
    Assignee: International Business Machines Corporation
    Inventors: Solomon Assefa, Michael C. Gaidis, Eric A. Joseph, Eugene J. O'Sullivan
  • Electroless plating of cobalt alloys for on chip inductors
    Patent number: 8846529
    Abstract: A method for forming an on-chip magnetic structure includes forming a seed layer over a substrate of a semiconductor chip. The seed layer is patterned to provide a plating location. A cobalt based alloy is electrolessly plated at the plating location to form an inductive structure on the semiconductor chip.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: September 30, 2014
    Assignee: International Business Machines Corporation
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • Self aligned carbide source/drain FET
    Patent number: 8841652
    Abstract: A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: September 23, 2014
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Josephine B. Chang, Alfred Grill, Michael A. Guillorn, Christian Lavoie, Eugene J. O'Sullivan
  • FORMING MAGNETIC MICROELECTROMECHANICAL INDUCTIVE COMPONENTS
    Publication number: 20140273283
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Application
    Filed: August 20, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • FORMING MAGNETIC MICROELECTROMECHANICAL INDUCTIVE COMPONENTS
    Publication number: 20140264676
    Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • ELECTROLESS PLATED MATERIAL FORMED DIRECTLY ON METAL
    Publication number: 20140239443
    Abstract: A method for forming magnetic conductors includes forming a metal structure on a substrate. Plating surfaces are prepared on the metal structure for electroless plating by at least one of: masking surfaces of the metal structure to prevent electroless plating on masked surfaces and/or activating a surface of the metal structure. Magnetic material is electrolessly plated directly on the plating surfaces to form a metal and magnetic material structure.
    Type: Application
    Filed: August 16, 2013
    Publication date: August 28, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: William J. Gallagher, Eugene J. O'Sullivan, Naigang Wang
  • ELECTROLESS PLATED MATERIAL FORMED DIRECTLY ON METAL
    Publication number: 20140239442
    Abstract: A method for forming magnetic conductors includes forming a metal structure on a substrate. Plating surfaces are prepared on the metal structure for electroless plating by at least one of: masking surfaces of the metal structure to prevent electroless plating on masked surfaces and/or activating a surface of the metal structure. Magnetic material is electrolessly plated directly on the plating surfaces to form a metal and magnetic material structure.
    Type: Application
    Filed: February 28, 2013
    Publication date: August 28, 2014
    Applicant: lNTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: WILLIAM J. GALLAGHER, EUGENE J. O'SULLIVAN, NAIGANG WANG