Abstract: A magnetic thin film includes a magnetic tunnel junction defined by a surrounding region including a fluorinated, non-magnetic, electrically insulating material.

Abstract: A method (and resulting structure) of patterning a magnetic thin film, includes using a chemical transformation of a portion of the magnetic thin film to transform the portion to be non-magnetic and electrically insulating.

Abstract: A plated test probe structure for testing electrical connections to integrated circuits (IC) devices with solder bumped interconnection pads that are an integral part of the fan-out wiring on the test substrate, or other printed wiring device.

Abstract: A probe structure for probing an electronic device.

Abstract: A three-part etching process is employed to selectively pattern exposed magnetic film layers of a magnetic thin film structure. The magnetic structure to be etched includes at least one bottom magnetic film layer and at least one top film layer which are separated by a tunnel barrier layer. The three-part etching process employs various etching steps that selective removing various layers of the magnetic thin film structure stopping on the tunnel barrier layer. The first etching step selective removes any surface oxide that may be present in the passivating layer that is formed on the top magnetic thin film layer, the second etching step selectively removes portions of the passivating layer and the third etching step selectively removes a portion of the exposed magnetic film layer of the structure stopping on the tunnel barrier layer.

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.

Abstract: A superconducting multilayer ceramic substrate is disclosed, prepared by firing a laminate of at least two polymer bonded cast sheets of a ceramic dielectric oxide powder, at least one sheet of which has a metallization pattern provided thereon, to thereby form a superconducting oxide reaction layer at the interface between the sintered ceramic material and the embedded metallic conductor lines of the metallization pattern.

Abstract: A process for electrolessly depositing cobalt-tin alloys with adjustable tin contents from 1 to over 25 atomic percent tin is disclosed. The deposited alloy is useful in the electronics and computer industries for device, chip interconnection and packaging applications. When used for chip interconnection applications, for example, the invention replaces the currently used complicated ball-limiting-metallurgy. The invention may also be used to inhibit hillock formation and electromigration in copper wire structures found in computers and micron dimension electronic devices.