Abstract: A washing device is disclosed, which is capable of preventing damage of a substrate caused by drooping of the substrate. The washing device includes a plasma irradiating part supplied with a substrate from a substrate loading part to remove dirt from the substrate by irradiating plasma to the substrate; a dirt washing part supplied from the substrate from the plasma irradiating part to remove dirt remaining on the substrate; a finishing washing part supplied with the substrate from the dirt washing part to wash the substrate; a drying part supplied with the substrate from the finishing washing part to dry the substrate; and a substrate unloading part supplied with the substrate from the drying part to unload the substrate, wherein the plasma irradiating part includes a plasma irradiation unit that irradiates plasma to the substrate and a floating unit that maintains the substrate in a floating state.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.

Abstract: A washing device is disclosed, which is capable of preventing damage of a substrate caused by drooping of the substrate. The washing device includes a plasma irradiating part supplied with a substrate from a substrate loading part to remove dirt from the substrate by irradiating plasma to the substrate; a dirt washing part supplied from the substrate from the plasma irradiating part to remove dirt remaining on the substrate; a finishing washing part supplied with the substrate from the dirt washing part to wash the substrate; a drying part supplied with the substrate from the finishing washing part to dry the substrate; and a substrate unloading part supplied with the substrate from the drying part to unload the substrate, wherein the plasma irradiating part includes a plasma irradiation unit that irradiates plasma to the substrate and a floating unit that maintains the substrate in a floating state.

Abstract: The present invention relates a washing device and a method for fabricating the same which has good chemical resistance and can prevent a scratch from forming on a substrate. The washing device includes a substrate entry guide for making a substrate to enter in a right direction from an outside of the washing device, a foreign matter removal unit for receiving the substrate from the substrate entry guide unit and removing foreign matters from the substrate, a foreign matter washing unit for receiving the substrate from the foreign matter removal unit and washing remained foreign matters from the substrate, and a position control unit for controlling a position of the substrate moving out of the foreign matter washing unit, wherein the substrate entry guide, the foreign matter removal unit, the foreign matter washing unit, and the position control unit are formed of metallic porous material.

Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Abstract: Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Abstract: A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.

Abstract: Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Abstract: A method includes forming a hard mask layer over an etch target layer that extends across first and second regions, forming a sacrificial layer pattern over the hard mask layer of the first region, removing the sacrificial layer pattern after forming a spacer pattern on side walls thereof, selectively etching the hard mask layer of the first region by using the spacer pattern as an etch barrier while protecting the hard mask layer of the second region from being etched, removing the spacer pattern, forming a cut mask pattern over the hard mask layer of the first and second regions, etching the hard mask layer of the first and second regions by using the cut mask pattern as an etch barrier, removing the cut mask pattern, and forming patterns in the first and second regions respectively by using the hard mask layer of the first and second regions as an etch barrier and etching the etch target layer.

Abstract: A substrate cleaning apparatus includes: a substrate entering guide unit for entering a substrate from outside in a proper direction; a foreign material removing unit for receiving the substrate from the substrate entering guide unit and removing debris formed on the substrate; a foreign material cleaning unit for receiving the substrate from the foreign material removing unit and cleaning to remove debris remaining on the substrate; and a position controller for controlling the position of the substrate carried out of the foreign material cleaning unit, wherein the foreign material cleaning unit includes: a manifold including a plurality of deionized water holes, suction holes and air holes; and a porous cleaning plate combined to the manifold by an upper fastening screw including a through hole communicating with the plurality of deionized water holes and suction holes.

Abstract: A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer.

Abstract: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

Abstract: A method for fabricating a semiconductor device includes forming an isolation layer which defines an active region in a substrate, forming recess patterns in the active region and the isolation layer, baking a surface of the recess pattern by conducting an annealing process and forming a gate dielectric layer over a surface of the recess pattern by conducting an oxidation process.

Abstract: Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.

Abstract: A method of managing a sound source in a digital AV device and an apparatus thereof are provided. The method of managing a sound source in a digital AV device includes: extracting at least one sound source from sound being reproduced through the digital AV device; mapping an image to the extracted sound source; and managing the sound sources by using the mapped image. In addition, preferably, the extracted sound source is registered, changed, deleted, selectively reproduced, or selectively deleted by using the image. Accordingly, sound being output can be visually managed by handling the sound sources separately, a desired sound source can be selectively reproduced or removed such that utilization of the digital AV device can be enhanced.

Abstract: A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.