Abstract: Provided is a nonvolatile memory including a clock pin configured to receive an external clock signal during a duty correction circuit training period; a plurality of memory chips configured to perform a duty correction operation on an internal clock signal based on the external clock signal, the plurality of memory chips configured to perform the duty correction operation in parallel during the training period; and an input/output pin commonly connected to the plurality of memory chips, wherein each of the plurality of memory chips includes: a duty correction circuit (DCC) configured to perform the duty correction operation on the internal clock signal; and an output buffer connected between an output terminal of the DCC and the input/output pin.

Abstract: A method for filling multiple colors of liquid color cosmetic materials, comprises the steps of: separating a sponge, into a plurality of sponge pieces by dividing the sponge; forming a coating film on the outer lateral side, or on the outer lateral side and on the lower surface of each of a plurality of the sponge pieces; impregnating different liquid color cosmetic materials into each of the sponge pieces having a coating film formed thereon; and fitting the angles of each of the sponge pieces, and coupling the sponge pieces. Liquid cosmetic materials having different colors are not mixed in one container without comprising a separate partition film, and a boundary line is clearly distinguished.

Abstract: A personal data processing method includes providing personal data of a user to a blockchain network by means of a personal identification key in the blockchain network that is registered for the user in different services that identify the same user with different identifiers. The personal data of the user in the different services can be tracked and utilized with the personal identification key.

Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.

Abstract: Provided is a nonvolatile memory including a clock pin configured to receive an external clock signal during a duty correction circuit training period; a plurality of memory chips configured to perform a duty correction operation on an internal clock signal based on the external clock signal, the plurality of memory chips configured to perform the duty correction operation in parallel during the training period; and an input/output pin commonly connected to the plurality of memory chips, wherein each of the plurality of memory chips includes: a duty correction circuit (DCC) configured to perform the duty correction operation on the internal clock signal; and an output buffer connected between an output terminal of the DCC and the input/output pin.

Abstract: A method for reverse-filling cosmetic material having an irreversible property and a cosmetic container filled therewith, including the steps of: sealing the top part of the cosmetic inner container, the top and bottom of which are open, with a filling mold, and turning the cosmetic inner container upside down to reverse-position the cosmetic inner container so that the sealed top part of the cosmetic inner container is directed downward and the open bottom part thereof is directed upward; and filling the cosmetic inner container through the bottom part thereof with the cosmetic material. In so doing, the top surface of the cosmetic material filled in the cosmetic container is smooth without any bumps, moisture seepage phenomenon is prevented, and cosmetic material having excellent applicability can be provided as the hardness thereof is relatively low by reverse-filling the cosmetic container with cosmetic material having an irreversible property, such as agar.

Abstract: A quantum communication control apparatus, a quantum communication system having the quantum communication control apparatus, and a method for designing the quantum communication control apparatus. The quantum communication control apparatus includes a first control board configured to include a plurality of connectors and to reconstruct respective functions or signal standards of the plurality of connectors, and at least one second control board configured to include a connector to be connected to any one of the plurality of connectors and to control an optical system implemented according to a protocol or a modulation scheme of quantum communication.

Abstract: Provided is a method of producing a carbon fiber, the method including: a) adding an acrylonitrile-based polymer solution to a solution containing a glycol-based compound having a boiling point of 180 to 210° C. to precipitate an acrylonitrile-based polymer; b) melt spinning the acrylonitrile-based polymer to obtain a spun fiber; and c) performing stabilization and carbonization on the spun fiber to obtain a carbon fiber.

Abstract: A particulate matter sensor is provided. The particulate matter sensor includes: an insulating substrate; a first electrode unit, and a plurality of spaced electrodes; a second electrode unit and a heater unit. Wherein each of the spaced electrode includes a sensing unit, wherein the particulate matter is deposited on the sensing unit, and a capacitor unit is configured on the spaced electrode for measuring capacitance. The plurality of spaced electrodes and the rim electrode are electrically connected when particulate matter is deposited, and thereby the capacitance between the first electrode unit and the second electrode unit can be measured.

Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

Abstract: A particulate matter sensor is provided that can include: an insulating substrate; a plurality of sensing electrodes which are disposed on one surface of the insulating substrate and spaced a predetermined interval from each other so as not to be electrically connected to each other; a connection electrode disposed to be coplanar with the plurality of sensing electrodes and connected to a connection terminal formed on the one surface of the insulating substrate to be connected to some or all of the plurality of sensing electrodes through deposited particulate matter; a plurality of terminals formed on the one surface of the insulating substrate and connected one-to-one with the plurality of sensing electrodes and the connection electrode; and a heater unit disposed inside the insulating substrate and configured to provide heat for removing the particulate matter deposited on the sensing electrodes.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: An electronic device is provided. The electronic device includes a first antenna for a first band and a second band, a second antenna for the second band and a third band and a pre-processing unit configured to generate, based on identifying a frequency band of a first signal received via the first antenna and a frequency band of a second signal received via the second antenna are the second band, a pre-processed signal by combining the first signal and the second signal based on a ratio of a weight factor, and to transmit the pre-processed signal to a first radio frequency (RF) receiver.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.

Abstract: The disclosure provided herewith relates to a Campylobacter jejuni CRISPR/CAS system-derived RGEN and a use thereof.

Abstract: A memory device includes; a first memory chip including a first on-die Termination (ODT) circuit comprising a first ODT resistor, a second memory chip including a second ODT circuit comprising a second ODT resistor, at least one chip enable signal pin that receives at least one chip enable signal, wherein the at least one chip enable signal selectively enables at least one of the first memory chip and the second memory chip, and an ODT pin commonly connected to the first memory chip and the second memory chip that receives an ODT signal, wherein the ODT signal defines an enable period for at least one of the first ODT circuit and the second ODT circuit, and in response to the ODT signal and the at least one chip enable signal, one of the first ODT resistor and the second ODT resistor is enabled to terminate a signal received by at least one of the first memory chip and the second memory chip.

Abstract: A particulate matter sensor is provided that can include: an insulating substrate; a plurality of sensing electrodes which are disposed on one surface of the insulating substrate and spaced a predetermined interval from each other so as not to be electrically connected to each other; a connection electrode disposed to be coplanar with the plurality of sensing electrodes and connected to a connection terminal formed on the one surface of the insulating substrate to be connected to some or all of the plurality of sensing electrodes through deposited particulate matter; a plurality of terminals formed on the one surface of the insulating substrate and connected one-to-one with the plurality of sensing electrodes and the connection electrode; and a heater unit disposed inside the insulating substrate and configured to provide heat for removing the particulate matter deposited on the sensing electrodes.

Abstract: Provided is a nonvolatile memory including a clock pin configured to receive an external clock signal during a duty correction circuit training period; a plurality of memory chips configured to perform a duty correction operation on an internal clock signal based on the external clock signal, the plurality of memory chips configured to perform the duty correction operation in parallel during the training period; and an input/output pin commonly connected to the plurality of memory chips, wherein each of the plurality of memory chips includes: a duty correction circuit (DCC) configured to perform the duty correction operation on the internal clock signal; and an output buffer connected between an output terminal of the DCC and the input/output pin.

Abstract: A nonvolatile memory (NVM) device includes a data pin, a control pin, an on-die termination (ODT) pin, and a plurality of NVM memory chips commonly connected to the data pin and the control pin. A first NVM chip among the NVM chips includes an ODT circuit. The first NVM chip determines one of an ODT write mode and an ODT read mode based on a control signal received through the control pin and an ODT signal received through the ODT pin, uses the ODT circuit to perform an ODT on the data pin during the ODT write mode, and uses the ODT circuit to perform the ODT on the control pin during the ODT read mode.