Abstract: Disclosed herein are an external connection terminal, a semiconductor package having the external connection terminal, and a method of manufacturing the same. The external connection terminal includes an internal insulating material, an external insulating material formed to enclose the internal insulating material, and metal lines formed between the internal insulating material and the external insulating material.

Abstract: In one embodiment, a miniaturized, multi-function, highly integrated and high performance semiconductor device or package includes a microphone implemented using a MEMS (Micro Electro Mechanical System) die. The semiconductor device includes a leadframe and a body collectively defining a port hole. The port hole facilitates the exposure of a diaphragm of the MEMS die in the semiconductor device.

Abstract: There is provided a semiconductor module capable of being easily manufactured. The semiconductor module includes: a control part including at least one control device; and a power part including at least one power device, wherein any one of the control part and the power part includes contact pins having elasticity, and the control part and the power part are electrically connected to each other by the contact pins.

Abstract: Disclosed herein is a contact pin including: a deformation part elastically deformed; connection parts coupled to both ends of the deformation part; and contact parts coupled to the connection parts coupled to both ends of the deformation part, respectively, and having one end coupled to the connection part and the other end.

Abstract: Disclosed herein is a heat sink including: a heat radiation pattern member having at least one bend cross section; and a heat radiation plate having the heat radiation pattern member disposed on an upper surface thereof, wherein the heat radiation pattern member includes wire patterns having a plurality of bends or a mesh bend pattern having a form of a plurality of bent cross sections.

Abstract: There is provided a semiconductor package capable of significantly reducing a size of a power semiconductor package including a power semiconductor device and a control device. The semiconductor package includes a lead frame including a first frame and a second frame; at least one first electronic device mounted on the first frame; a substrate engaged with the second frame and having one surface on which a wiring pattern is formed; and at least one second electronic device mounted on the substrate and electrically connected to the wiring pattern, a portion of the wiring pattern electrically connected to the at least one second electronic device being formed to have a line width smaller than an internal lead of the lead frame.

Abstract: Disclosed herein is a semiconductor package including: first power device; second power device formed in an upper portion of the first power device; a first lead frame formed in a lower portion of the first power device; a second lead frame formed in the upper portion of the first power device and a lower portion of the second power device; a third lead frame formed in an upper portion of the second power device; a fourth lead frame electrically connected to at least one of the power device and the second power device; and a sealing substance exposing a part of the first through fourth lead frames and sealing the other parts thereof.