Patents by Inventor Eveline Postelnicu

Eveline Postelnicu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11604147
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: March 14, 2023
    Assignee: Massachusetts Institute of Technology
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, Michelle L. Clark, Anuradha M. Agarwal
  • Publication number: 20220065793
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Application
    Filed: November 9, 2021
    Publication date: March 3, 2022
    Applicant: Massachusetts Institute of Technology
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi WADA, Jurgen MICHEL, Lionel C. KIMERLING, Michelle L. Clark, Anuradha M. AGARWAL
  • Patent number: 11204327
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: December 21, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling, Michelle L. Clark, Anuradha M. Agarwal
  • Publication number: 20200158651
    Abstract: A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 ?m.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 21, 2020
    Inventors: Eveline Postelnicu, Samarth Aggarwal, Kazumi WADA, Jurgen MICHEL, Lionel C. KIMERLING, Michelle L. Clark, Anuradha M. AGARWAL