Patents by Inventor Everhardus Cornelis Mos

Everhardus Cornelis Mos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10809631
    Abstract: A method of monitoring a device manufacturing process, the method including; obtaining an estimated time variation of a process parameter; determining, on the basis of the estimated time variation, a sampling plan for measurements to be performed on a plurality of substrates to obtain information about the process parameter; measuring substrates in accordance with the sampling plan to obtain a plurality of measurements; and determining an actual time variation of the process parameter on the basis of the measurements.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: October 20, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Jochem Sebastiaan Wildenberg, Marcel Hendrikus Maria Beems, Erik Johannes Maria Wallerbos
  • Patent number: 10802408
    Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: October 13, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Jochem Sebastiaan Wildenberg, Erik Johannes Maria Wallerbos, Maurits Van Der Schaar, Frank Staals, Franciscus Hendricus Arnoldus Elich
  • Publication number: 20200319118
    Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
    Type: Application
    Filed: June 18, 2020
    Publication date: October 8, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Wouter Lodewijk ELINGS, Franciscus Bernardus Maria VAN BILSEN, Christianus Gerardus Maria DE MOL, Everhardus Cornelis MOS, Hoite Pieter Theodoor TOLSMA, Peter TEN BERGE, Paul Jacques VAN WIJNEN, Leonard us Henricus Marie VERSTAPPEN, Gerald DICKER, Reiner Maria JUNGBLUT, Chung-Hsun LI
  • Patent number: 10746668
    Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: August 18, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
  • Publication number: 20200249576
    Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
    Type: Application
    Filed: July 11, 2018
    Publication date: August 6, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Patrick WARNAAR, Patricius Aloysius Jacobus TINNEMANS, Grzegorz GRZELA, Everhardus Cornelis MOS, Wim Tjibbo TEL, Marinus JOCHEMSEN, Bart Peter Bert SEGERS, Frank STAALS
  • Patent number: 10725372
    Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: July 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Marinus Jochemsen, Frank Staals, Christopher Prentice, Laurent Michel Marcel Depre, Johannes Marcus Maria Beltman, Roy Werkman, Jochem Sebastiaan Wildenberg, Everhardus Cornelis Mos
  • Patent number: 10691863
    Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: June 23, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Peter Ten Berge, Everhardus Cornelis Mos, Richard Johannes Franciscus Van Haren, Peter Hanzen Wardenier, Erik Jensen
  • Publication number: 20200081353
    Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.
    Type: Application
    Filed: March 28, 2018
    Publication date: March 12, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hubertus Johannes Gertrudus SIMONS, Everhardus Cornelis MOS, Xiuhong WEI, Reza MAHMOODI BARAM, Hadi YAGUBIZADE, Yichen ZHANG
  • Publication number: 20200057395
    Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 20, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jasper MENGER, Paul Cornelis Hubertus Aben, Everhardus Cornelis Mos
  • Publication number: 20200026201
    Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
    Type: Application
    Filed: March 28, 2018
    Publication date: January 23, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Marc HAUPTMANN, Everhardus Cornelis MOS, Weitian KOU, Alexander YPMA, Michiel KUPERS, Hyunwoo YU, Min-Sub HAN
  • Patent number: 10495990
    Abstract: Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: December 3, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Jasper Menger, Paul Cornelius Hubertus Aben, Everhardus Cornelis Mos
  • Publication number: 20190361358
    Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
    Type: Application
    Filed: February 12, 2018
    Publication date: November 28, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria I KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
  • Publication number: 20190317412
    Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.
    Type: Application
    Filed: October 16, 2017
    Publication date: October 17, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG, Erik Johannes Maria WALLERBOS, Maurits VAN DER SCHAAR, Frank STAALS, Franciscus Hendricus Arnoldus ELICH
  • Publication number: 20190311921
    Abstract: A substrate processing apparatus includes a substrate loading device configured to load a substrate in a predetermined orientation relative to a grid, having a X-axis and an orthogonal Y-axis, associated with a layout of fields on the substrate; and corrective elements configured to enable local correction of a characteristic of a process performed on a substrate, wherein the corrective elements are arranged along at least one axis having a direction other than parallel to the X-axis or the Y-axis of the grid.
    Type: Application
    Filed: September 21, 2017
    Publication date: October 10, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG
  • Publication number: 20190301850
    Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
    Type: Application
    Filed: April 10, 2019
    Publication date: October 3, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Wouter Lodewijk ELINGS, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
  • Publication number: 20190285992
    Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.
    Type: Application
    Filed: November 6, 2017
    Publication date: September 19, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus VAN HAREN, Victor Emanuel CALADO, Leon Paul VAN DIJK, Roy WERKMAN, Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG, Marinus JOCHEMSEN, Bijoy RAJASEKHARAN, Erik JENSEN, Adam Jan URBANCZYK
  • Patent number: 10317191
    Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: June 11, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
  • Publication number: 20190011842
    Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.
    Type: Application
    Filed: February 22, 2017
    Publication date: January 10, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG, Roy WERKMAN, Erik Johannes Maria WALLERBOS
  • Publication number: 20180314168
    Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
    Type: Application
    Filed: September 26, 2016
    Publication date: November 1, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus VAN HAREN, Everhardus Cornelis MOS, Peter TEN BERGE, Peter Hanzen WARDENIER, Erik JENSEN, Hakki Erg√ľn CEKLI
  • Publication number: 20180307135
    Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.
    Type: Application
    Filed: September 28, 2016
    Publication date: October 25, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Peter TEN BERGE, Everhardus Cornelis MOS, Richard Johannes Franciscus VAN HAREN, Peter Hanzen WARDENIER, Erik JENSEN, Bernardo KASTRUP, Michael KUBIS, Johannes Catharinus Hubertus MULKENS, Davis Frans Simon DECKERS, Wolfgang Helmut HENKE, Joungchel LEE