Patents by Inventor Evgeny KAMENETSKIY
Evgeny KAMENETSKIY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030002Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: October 2, 2023Publication date: January 25, 2024Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Linying CUI
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Patent number: 11848176Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: May 7, 2021Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere
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Publication number: 20230326717Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: ApplicationFiled: May 24, 2023Publication date: October 12, 2023Applicant: Applied Materials, Inc.Inventors: Leonid DORF, Evgeny KAMENETSKIY, James ROGERS, Olivier LUERE, Rajinder DHINDSA, Viacheslav PLOTNIKOV
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Patent number: 11776789Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: October 3, 2022Date of Patent: October 3, 2023Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Linying Cui
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Publication number: 20230280150Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.Type: ApplicationFiled: May 15, 2023Publication date: September 7, 2023Applicant: Applied Materials, Inc.Inventors: Sathyendra GHANTASALA, Leonid DORF, Evgeny KAMENETSKIY, Peter MURAOKA, Denis Martin KOOSAU, Rajinder DHINDSA, Andreas SCHMID
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Patent number: 11699572Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: January 22, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Evgeny Kamenetskiy, James Rogers, Olivier Luere, Rajinder Dhindsa, Viacheslav Plotnikov
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Patent number: 11668553Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.Type: GrantFiled: January 28, 2021Date of Patent: June 6, 2023Assignee: Applied Materials Inc.Inventors: Sathyendra Ghantasala, Leonid Dorf, Evgeny Kamenetskiy, Peter Muraoka, Denis M. Koosau, Rajinder Dhindsa, Andreas Schmid
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Publication number: 20230030927Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: October 3, 2022Publication date: February 2, 2023Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Linying CUI
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Patent number: 11482402Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, ?, from a plasma processing chamber, determine a peak maximum power, Ppeakmax, based on a maximum average power, Pavgmax, and a maximum absolute power, Pabsmax, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, Ppeak, to the plasma processing chamber based on the Ppeakmax.Type: GrantFiled: December 18, 2020Date of Patent: October 25, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Rajinder Dhindsa, Olivier Luere, Evgeny Kamenetskiy
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Patent number: 11462388Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: May 7, 2021Date of Patent: October 4, 2022Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Linying Cui
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Patent number: 11462389Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: May 7, 2021Date of Patent: October 4, 2022Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Jonathan Kolbeck, Linying Cui
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Publication number: 20220037120Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: May 7, 2021Publication date: February 3, 2022Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Jonathan KOLBECK, Linying CUI
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Publication number: 20220037119Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: May 7, 2021Publication date: February 3, 2022Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Linying Cui
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Publication number: 20220037121Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: May 7, 2021Publication date: February 3, 2022Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE
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Publication number: 20210254957Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.Type: ApplicationFiled: January 28, 2021Publication date: August 19, 2021Inventors: Sathyendra GHANTASALA, Leonid DORF, Evgeny KAMENETSKIY, Peter MURAOKA, Denis M. KOOSAU, Rajinder DHINDSA, Andreas SCHMID
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Publication number: 20210193438Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, ?, from a plasma processing chamber, determine a peak maximum power, Ppeakmax, based on a maximum average power, Pavgmax, and a maximum absolute power, Pabsmax, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, Ppeak, to the plasma processing chamber based on the Ppeakmax.Type: ApplicationFiled: December 18, 2020Publication date: June 24, 2021Inventors: Leonid DORF, Rajinder DHINDSA, Olivier LUERE, Evgeny KAMENETSKIY
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Patent number: 10923321Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: February 13, 2020Date of Patent: February 16, 2021Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Evgeny Kamenetskiy, James Rogers, Olivier Luere, Rajinder Dhindsa, Viacheslav Plotnikov
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Patent number: 10916408Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: February 13, 2020Date of Patent: February 9, 2021Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Evgeny Kamenetskiy, James Rogers, Olivier Luere, Rajinder Dhindsa, Viacheslav Plotnikov
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Publication number: 20200234922Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: ApplicationFiled: February 13, 2020Publication date: July 23, 2020Inventors: Leonid DORF, Evgeny KAMENETSKIY, James ROGERS, Olivier LUERE, Rajinder DHINDSA, Viacheslav PLOTNIKOV
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Publication number: 20200234923Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: ApplicationFiled: February 13, 2020Publication date: July 23, 2020Inventors: Leonid DORF, Evgeny KAMENETSKIY, James ROGERS, Olivier LUERE, Rajinder DHINDSA, Viacheslav PLOTNIKOV