Patents by Inventor F. Erdem Arkun

F. Erdem Arkun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8542437
    Abstract: The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: September 24, 2013
    Assignee: Translucent, Inc.
    Inventors: Michael S. Lebby, Andrew Clark, F. Erdem Arkun, Robin Smith, David Williams
  • Publication number: 20120256232
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Application
    Filed: September 30, 2011
    Publication date: October 11, 2012
    Applicant: Translucent, Inc.
    Inventors: Andrew Clark, F. Erdem Arkun, Michael Lebby
  • Publication number: 20120073648
    Abstract: The invention relates to photovoltaic device structures of more than one layer comprising rare earth compounds and Group IV materials enabling spectral harvesting outside the conventional absorption limits for silicon.
    Type: Application
    Filed: September 24, 2010
    Publication date: March 29, 2012
    Inventors: Andrew Clark, Robin Smith, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8049100
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: November 1, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8039738
    Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8039737
    Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100122720
    Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 20, 2010
    Applicant: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100116315
    Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 13, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100109047
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 6, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby