Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.

Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.

Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.

Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.

Abstract: A MOSFET device is integrated in a body of semiconductor material of a first conductivity type accommodating a body region, of a second conductivity type, and a source region, of the first conductivity type. A gate region extends over the top surface of the body; a source pad extends over the first top surface and is electrically coupled to the source region, a first gate pad extends over the first main surface, alongside the source pad, and is electrically coupled to the gate region; a drain pad extends over the rear surface and is electrically coupled to the body; a second gate pad extends over the rear surface, alongside the drain pad; and a conductive via extends through the body and electrically couples the gate region to the second gate pad.

Abstract: A MOSFET device is integrated in a body of semiconductor material of a first conductivity type accommodating a body region, of a second conductivity type, and a source region, of the first conductivity type. A gate region extends over the top surface of the body; a source pad extends over the first top surface and is electrically coupled to the source region, a first gate pad extends over the first main surface, alongside the source pad, and is electrically coupled to the gate region; a drain pad extends over the rear surface and is electrically coupled to the body; a second gate pad extends over the rear surface, alongside the drain pad; and a conductive via extends through the body and electrically couples the gate region to the second gate pad.

Abstract: A refurbishment process for a volumetric screw compressor of the ‘oil-free’ type, which comprises a male rotor and a female rotor, is described. The process comprises visually checking the wear condition of the rotors, treating their surface for removing the previous coating, and applying a new coating on the surface. The composition of the coating applied on the surface of the rotors consists of the following materials: Material Amount (g) Polytetrafluoroethylene 750 ÷ 850 (954G 303 C Teflon, DuPont) Amorphous graphite powder 300 ÷ 400 Thinner for spray cleaning apparatuses 200 ÷ 270 (8595 thinner, DuPont) Methyl ethyl ketone (MEK) 170 ÷ 220 Cellosolve acetate coating additive 200 ÷ 300 (Syn Fac 800 resin).

Abstract: A refurbishment process for a volumetric screw compressor of the ‘oil-free’ type, which comprises a male rotor and a female rotor, is described. The process comprises visually checking the wear condition of the rotors, treating their surface for removing the previous coating, and applying a new coating on the surface.

Abstract: An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.

Abstract: An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.