Patents by Inventor Fabio RUSSO

Fabio RUSSO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220013439
    Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.
    Type: Application
    Filed: July 2, 2021
    Publication date: January 13, 2022
    Applicant: STMicroelectronics S.r.l.
    Inventors: Cristiano Gianluca STELLA, Fabio RUSSO
  • Patent number: 10770576
    Abstract: A MOSFET device is integrated in a body of semiconductor material of a first conductivity type accommodating a body region, of a second conductivity type, and a source region, of the first conductivity type. A gate region extends over the top surface of the body; a source pad extends over the first top surface and is electrically coupled to the source region, a first gate pad extends over the first main surface, alongside the source pad, and is electrically coupled to the gate region; a drain pad extends over the rear surface and is electrically coupled to the body; a second gate pad extends over the rear surface, alongside the drain pad; and a conductive via extends through the body and electrically couples the gate region to the second gate pad.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: September 8, 2020
    Assignee: STMicroelectronics S.r.l.
    Inventors: Fabio Russo, Cristiano Gianluca Stella
  • Publication number: 20190109225
    Abstract: A MOSFET device is integrated in a body of semiconductor material of a first conductivity type accommodating a body region, of a second conductivity type, and a source region, of the first conductivity type. A gate region extends over the top surface of the body; a source pad extends over the first top surface and is electrically coupled to the source region, a first gate pad extends over the first main surface, alongside the source pad, and is electrically coupled to the gate region; a drain pad extends over the rear surface and is electrically coupled to the body; a second gate pad extends over the rear surface, alongside the drain pad; and a conductive via extends through the body and electrically couples the gate region to the second gate pad.
    Type: Application
    Filed: October 8, 2018
    Publication date: April 11, 2019
    Inventors: Fabio RUSSO, Cristiano Gianluca STELLA
  • Patent number: 9878347
    Abstract: A refurbishment process for a volumetric screw compressor of the ‘oil-free’ type, which comprises a male rotor and a female rotor, is described. The process comprises visually checking the wear condition of the rotors, treating their surface for removing the previous coating, and applying a new coating on the surface. The composition of the coating applied on the surface of the rotors consists of the following materials: Material Amount (g) Polytetrafluoroethylene 750 ÷ 850 (954G 303 C Teflon, DuPont) Amorphous graphite powder 300 ÷ 400 Thinner for spray cleaning apparatuses 200 ÷ 270 (8595 thinner, DuPont) Methyl ethyl ketone (MEK) 170 ÷ 220 Cellosolve acetate coating additive 200 ÷ 300 (Syn Fac 800 resin).
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: January 30, 2018
    Assignee: RIEM SERVICE S.R.L.
    Inventor: Fabio Russo
  • Publication number: 20140295059
    Abstract: A refurbishment process for a volumetric screw compressor of the ‘oil-free’ type, which comprises a male rotor and a female rotor, is described. The process comprises visually checking the wear condition of the rotors, treating their surface for removing the previous coating, and applying a new coating on the surface.
    Type: Application
    Filed: March 26, 2014
    Publication date: October 2, 2014
    Applicant: Riem Service s.r.l.
    Inventor: Fabio RUSSO
  • Patent number: 8581345
    Abstract: An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.
    Type: Grant
    Filed: April 8, 2011
    Date of Patent: November 12, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Fabio Russo, Antonio Grimaldi, Fabio Zara
  • Publication number: 20110180843
    Abstract: An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.
    Type: Application
    Filed: April 8, 2011
    Publication date: July 28, 2011
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Fabio RUSSO, Antonio GRIMALDI, Fabio ZARA