Abstract: A method for making a device with superconductor qubit(s) including at least one JoFET formed by the following steps of: making, over a semiconductor layer, a protective dielectric portion arranged over a first region of the semiconductor layer; implanting dopants in second regions adjacent to the first region; depositing a protective dielectric layer covering the protective dielectric portion and the second regions; exposing the protective dielectric layer to a laser pulse; and wherein the materials and the thicknesses of the protective dielectric portion and of the protective dielectric layer are selected so as to prevent the laser pulse from reaching the first region, and melting the semiconductor of the second regions which forms, after cooling, a recrystallised semiconductor material having superconductor material properties.

Abstract: Method for producing a superconducting transistor comprising: producing a dummy gate on a first part of a semiconducting layer; producing superconducting electrodes such that the first part of the semiconducting layer comprises sides edges arranged against parts of the superconducting electrodes, and comprising a deposition of a superconducting material layer having first parts arranged against side edges of the dummy gate and second parts forming parts of the superconducting electrodes; producing lateral spacers next to the first parts of the superconducting material layer and on the second parts of the superconducting material layer; removing the dummy gate and the first parts of the superconducting material layer, creating a gate location arranged between the lateral spacers and above the first part of the semiconducting layer and above said parts of the superconducting electrodes; producing a gate in the gate location.

Abstract: A method for producing a quantum device comprising providing a substrate having a front face and carrying at least one transistor pattern on the front face thereof, said transistor pattern comprising, in a stack a gate dielectric on the front face of the substrate, and a gate on the gate dielectric, said gate having a top and sidewalls. The method further includes forming a protective layer at the front face of the substrate, said protective layer being configured to prevent diffusion of at least one metal species in the substrate, forming a metal layer that has, as a main component, at least one metal species, at least on the sidewalls of the gate, said at least one metal species comprising at least one superconducting element, and forming a superconducting region in the gate by lateral diffusion of the at least one superconducting element from the sidewalls of said gate.

Abstract: A method is provided for producing a plurality of transistors on a substrate comprising at least two adjacent active areas separated by at least one electrically-isolating area, each transistor of the plurality of transistors including a gate having a silicided portion, and first and second spacers on either side of the gate, the first spacers being located on sides of the gate and the second spacers being located on sides of the first spacers. The method includes forming the gates of the transistors, forming the first spacers, forming the second spacers, siliciding the gates so as to form the silicided portions of the gates, and removing the second spacers. The removal of the second spacers takes place during the silicidation of the gates and before the silicided portions are fully formed.

Abstract: A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elem

Abstract: The invention concerns an inteconnect device for interconnection between lines of superconducting material at least one via in contact with those lines, comprising: a) a first substrate, which carries at least one first line of a first superconducting material; b) at least one first via of a second superconducting material, different from the first superconducting material, said at least one first line being disposed between said first substrate and said first via; c) at least one second line above said first via and in contact with the latter.

Abstract: A method for producing a quantum device comprising forming a supraconductive layer, forming a mask on the supraconductive layer, the mask comprising masking patterns and at least two openings alternately in a direction, the at least two openings being separated from one another by a separation distance pi (i=1 . . . n), and further each having a width di (i=1 . . . n+1), such as the separation distance pi and a width di are less than a coherence length of a Cooper pair in said supraconductive material, and modifying, through the at least two openings, of the exposed portions of the supraconductive layer, so as to form at least two barriers of width di separating the supraconductive regions.

Abstract: A semiconductor device made on a substrate including an active region and a non-active region at least partially surrounding the active region, a plurality of gate stacks, a part of each gate stack being on the active region, each gate stack being separated from adjacent gate stacks by a spacer by a distance e, the device being such that, for each gate stack, the part of the gate stack located on the active region has a height h2, the part of the same gate stack located on the non-active region has a height h1, and h2/e=a2 and h1/e=a1<alim where a2 is an aspect ratio such that, upon growth of the spacer material forming the spacers, an airgap is in the spacer, and a1 is an aspect ratio such that, upon growth of the spacer material forming the spacers, no airgap is in the spacer.

Abstract: A method for producing a transistor includes producing on a substrate provided with a semiconductor surface layer in which an active area can be formed, a gate block arranged on the active area. Lateral protection areas are formed against lateral faces of the gate block. Source and drain regions based on a metal material-semiconductor material compound are formed on either side of the gate and in the continuation of a portion located facing the gate block. Insulating spacers are formed on either side of the gate resting on the regions based on a metal material-semiconductor material compound.

Abstract: A method for producing a superconducting vanadium silicide on a silicon layer includes treating a face of the silicon layer in order to prepare it for a deposition of vanadium silicide, then depositing a vanadium silicide layer on the prepared face of the silicon layer in order to obtain a stack of a vanadium silicide layer directly deposited on the silicon layer, then an annealing the stack which increases the critical temperature of the vanadium silicide deposited. The treating includes an operation of incorporation of argon atoms in the silicon layer through the face of the silicon layer.

Abstract: A Josephson transistor, this transistor comprising a source and a drain each comprising an electric charge reservoir in electrical contact with a semiconductor layer. Each reservoir comprises a lower face and a side face both buried inside the semiconductor layer, The lower face of each reservoir extends mainly in an intermediate plane parallel to the plane of a support, this intermediate plane being located between a lower plane and an upper plane that define the semiconductor layer. The side face of each reservoir extends mainly perpendicular to the plane of the support, this side face facing the corresponding side face of the other reservoir and being separated from this corresponding side face of the other reservoir by a channel located under a gate of this transistor.

Abstract: Method for producing a semiconductor device, including: producing, on a first region of a surface layer comprising a first semiconductor and disposed on a buried dielectric layer, a layer of a second compressive strained semiconductor along a first direction; etching a trench through the layer of the second semiconductor forming an edge of a portion of the layer of the second semiconductor oriented perpendicularly to the first direction, and wherein the bottom wall is formed by the surface layer; thermal oxidation forming in the surface layer a semiconductor compressive strained portion along the first direction and forming in the trench an oxide portion; producing, through the surface layer and/or the oxide portion, and through the buried dielectric layer, dielectric isolation portions around an assembly formed of the compressive strained semiconductor portion and the oxide portion; and wherein the first semiconductor is silicon, the second semiconductor is SiGe, and said at least one compressive strained

Abstract: A semiconductor device includes a substrate; a plurality of gate stacks situated horizontally following one another on the substrate, each gate stack including a layer of a dielectric material in contact with the substrate and a layer of a conductive material on the layer of dielectric material; a source and a drain situated on the substrate on either side of the plurality of gate stacks; a plurality of first spacers made of a first dielectric material, called secondary spacers, having a first width, called width of the secondary spacers, the source and the drain being separated from the closest gate stack by a secondary spacer; at least one main spacer made of a second dielectric material, a main spacer being situated between each gate stack, the width of the main spacer(s) being greater than the width of the secondary spacers.

Abstract: A method is provided for producing a component based on a plurality of transistors on a substrate including an active area and an electrical isolation area, each transistor including a gate and spacers on either side of the gate, the electrical isolation area including at least one cavity formed as a hollow between a spacer of a first transistor of the plurality of transistors and a spacer of a second transistor of the plurality of transistors, the first and the second transistors being adjacent, the method including: forming the gates of the transistors; forming the spacers; and forming a mechanically constraining layer for the transistors; and after forming the spacers and before forming the mechanically constraining layer, forming a filling configured to at least partially fill, with a filling material, the at least one cavity within the electrical isolation area, between the spacers of the first and the second transistors.

Abstract: A process for fabricating an electronic component with multiple quantum dots is provided, including providing a stack including a substrate, a nanostructure made of semiconductor material superposed over the substrate and including first and second quantum dots and a link linking the quantum dots, first and second control gate stacks arranged on the quantum dots, the gate stacks separated by a gap, the quantum dots and the link having a same thickness; partially thinning the link while using the gate stacks as masks to obtain the link, a thickness of which is less than that of the quantum dots; and conformally forming a dielectric layer on either side of the gate stacks so as to fill the gap above the partially thinned link. An electronic component with multiple quantum dots is also provided.

Abstract: A method for producing a quantum device comprising providing a substrate having a front face and carrying at least one transistor pattern on the front face thereof, said transistor pattern comprising, in a stack a gate dielectric on the front face of the substrate, and a gate on the gate dielectric, said gate having a top and sidewalls. The method further includes forming a protective layer at the front face of the substrate, said protective layer being configured to prevent diffusion of at least one metal species in the substrate, forming a metal layer that has, as a main component, at least one metal species, at least on the sidewalls of the gate, said at least one metal species comprising at least one superconducting element, and forming a superconducting region in the gate by lateral diffusion of the at least one superconducting element from the sidewalls of said gate.

Abstract: A quantum device includes a transistor pattern carried by a substrate, the transistor pattern having, in a stack, a gate dielectric and a superconducting gate on the gate dielectric. The superconducting gate has a base, a tip, sidewalls and at least one superconducting region made of a material that has, as a main component, at least one superconducting element. The superconducting gate also includes a basal portion having a dimension, taken in a first direction of a basal plane that is smaller than a dimension of the tip of the superconducting gate. The transistor pattern further includes at least one dielectric portion made of a dielectric material in contact with the top face of the gate dielectric and the basal portion of the superconducting gate.

Abstract: A method is provided for producing a plurality of transistors on a substrate comprising at least two adjacent active areas separated by at least one electrically-isolating area, each transistor of the plurality of transistors including a gate having a silicided portion, and first and second spacers on either side of the gate, the first spacers being located on sides of the gate and the second spacers being located on sides of the first spacers. The method includes forming the gates of the transistors, forming the first spacers, forming the second spacers siliciding the gates so as to form the silicided portions of the gates, and removing the second spacers. The removal of the second spacers takes place during the silicidation of the gates and before the silicided portions are fully formed.

Abstract: A process for fabricating an integrated circuit is provided, including steps of providing a substrate including a silicon layer, a layer of insulator a layer of hard mask and accesses to first and second regions of the silicon layer; forming first and second deposits of SiGe alloy on the first and the second regions in order to form first and second stacks; then protecting the first deposit and maintaining an access to the second deposit; then performing an etch in order to form trenches between the hard mask and two opposite edges of the second stack; then forming a tensilely strained silicon layer in the second region via amorphization of the second region; then crystallization; and enriching the first region in germanium by diffusion from the first deposit.

Abstract: A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.