Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.

Abstract: Materials and methods for improving the DC and RF performance of off-state step-stressed high electron mobility transistors (HEMTs) and devices are provided. A semiconductor device can include at least one HEMT and an on-chip heating source. A method of recovering the DC and RF performance of a stressed semiconductor device can include annealing the device with a built-in heating source of the device.

Abstract: Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: Various examples are provided for low cost disposable medical sensors fabricated on glass, paper or plastics, and applications thereof. In one example, a medical sensor includes a base structure comprising a functionalized sensing area; and a transistor disposed on the base structure adjacent to the functionalized sensing area. In another example, a medical sensor includes a base structure comprising a functionalized sensing area disposed on a first electrode pad and a reference sensing area disposed on a second electrode pad separated from the first electrode pad; and a transistor having a gate electrically coupled to the second electrode pad of the base structure. A gate pulse applied to the functionalized sensing can produce a drain current corresponding to an amount of a target present in a sample disposed on the base structure.

Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.

Abstract: A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.

Abstract: Dental prosthetic restoration coatings made of dielectric materials, methods of fabricating the same, as well as methods of testing dental prosthetic restorations are provided. A prosthetic restoration coating can include dielectric materials such as Al2O3, ZrO2, SiNx, SiC, and SiO2. Application can take place using plasma enhanced chemical vapor deposition (PECVD) methods, and alternating materials can be used to achieve desired anticorrosive, structural integrity, hardness, adhesion, and color characteristics. A testing method can include immersing a test device in solutions of differing pH, with or without abrasive steps. The cycling can include an acidic solution and a basic solution, with an optional neutral solution. As the abrasive step, a chewing simulator can be utilized.

Abstract: Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).

Abstract: Embodiments of the present Invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.

Abstract: A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.

Abstract: Materials and methods for improving the DC and RF performance of off-state step-stressed high electron mobility transistors (HEMTs) and devices are provided. A semiconductor device can include at least one HEMT and an on-chip heating source. A method of recovering the DC and RF performance of a stressed semiconductor device can include annealing the device with a built-in heating source of the device.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.

Abstract: A Strap binder storage box which comprising a storage box body with multiple storage compartments, each storage compartment comprising a strap storage slot, a binder body storage compartment and a hook storage compartment. The strap storage compartment is in an elongated shape, the binder body storage compartment and the hook storage compartment are positioned at the opening and the two ends of the strap storage slot respectively. Wherein, the strap binder which comprising a binder body, and a primary strap and a secondary strap. When storing, the primary and the secondary strap are placed in the strap storage slot, the hook on the primary and the secondary strap are stacked on top of another and then extended into a hook cover of the hook storage compartment, and then are secured by a coupling piece that couples with coupling slots arranged on the strap storage slot.

Abstract: Embodiments of the present invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.

Abstract: The subject invention concerns nanorods, compositions and substrates comprising nanorods, and methods of making and using nanorods and nanorod compositions and substrates. In one embodiment, the nanorod is composed of Zinc oxide (ZnO). In a further embodiment, a nanorod of the invention further comprises SiO2 or TiO2. In a specific embodiment, a nanorod of the invention is composed of ZnO coated with SiO2. Nanorods of the present invention are useful as an adhesion-resistant biomaterial capable of reducing viability in anchorage-dependent cells.

Abstract: Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.

Abstract: Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.