Abstract: A backplane can have a non-planar top surface. Insulating material portions including planar top surface regions located within a same horizontal plane are formed over the backplane. A two- dimensional array of metal plate clusters is formed over the insulating material portions. Each of the metal plate clusters includes a plurality of metal plates. Each metal plate includes a horizontal metal plate portion overlying a planar top surface region and a connection metal portion connected to a respective metal interconnect structure in the backplane. A two- dimensional array of light emitting device clusters is bonded to the backplane through respective bonding structures. Each light emitting device cluster includes a plurality of light emitting devices overlying a respective metal plate cluster.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.

Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Abstract: A method of repairing a light emitting device assembly includes providing a light emitting device assembly including a backplane and light emitting devices, where a predominant subset of pixels in the light emitting device assembly includes an empty site for accommodating a repair light emitting device, generating a test map that identifies non-functional light emitting devices in the light emitting device assembly, providing an assembly of a repair head and repair light emitting devices, wherein the repair light emitting devices are located only on locations that are mirror images of empty sites within defective pixels that include non-functional light emitting devices, and transferring the repair light emitting devices from the repair head to the backplane in the empty site in the defective pixels.

Abstract: A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.

Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.

Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.

Abstract: A growth mask layer including an array of apertures therethrough can be formed on a single crystalline gallium nitride layer. Group III nitride nanostructures including gallium nitride or indium gallium nitride nanopyramids or nanowires can be formed through the array of apertures by a selective epitaxy process. An indium gallium nitride material can be deposited by another selective epitaxy process on the Group III nitride nanostructures until a continuous indium gallium nitride template layer is formed. The continuous indium gallium nitride template layer has a dislocation density that decreases with distance from the growth mask layer. Red light emitting diodes can be formed over the continuous indium gallium nitride template layer with higher efficiency due the relatively large lattice constant of the continuous indium gallium nitride template layer.

Abstract: An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.

Abstract: A light emitting device and method of forming the same, the method including etching grooves into semiconductor layers disposed on a substrate to form mesas, forming an insulating layer on the mesas, etching the insulating layer to expose upper surfaces of the mesas, and forming a reflective contact layer on the mesas. The contact layer may include protrusions disposed in the grooves on the etched insulating layer, and facing sidewalls of the mesas.

Abstract: A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.

Abstract: A method of repairing a light emitting device assembly includes providing a light emitting device assembly including a backplane and light emitting devices, where a predominant subset of pixels in the light emitting device assembly includes an empty site for accommodating a repair light emitting device, generating a test map that identifies non-functional light emitting devices in the light emitting device assembly, providing an assembly of a repair head and repair light emitting devices, wherein the repair light emitting devices are located only on locations that are mirror images of empty sites within defective pixels that include non-functional light emitting devices, and transferring the repair light emitting devices from the repair head to the backplane in the empty site in the defective pixels.

Abstract: A liquid crystal display module includes a plurality of liquid crystal pixels and a backlight unit containing white-light-emitting LEDs located in individually dimmable zones. Selectively brightening or dimming one or more individually dimmable zones to directly illuminate one or more pixels with brighter or dimmer white light.

Abstract: A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the nanowire LEDs are initially grown, they may emit first-wavelength light proximally to the substrate and second-wavelength light distally from the substrate. The nanowires may remain as initially grown, in which case only second-wavelength light is visible, or the second-wavelength light emitting portions may be etched away such that only first-wavelength light is visible.

Abstract: An integrated back light unit includes a light emitting device assembly which contains an optically transparent encapsulant portion which encapsulates at least one light emitting device, and a light guide unit optically coupled to the at least one light emitting device to receive light from the at least one light emitting device. An adhesive material portion can be provided to bond the light emitting device assembly and the light guide unit. Light-scattering particles can be provided in the optical path of the light from the at least one light emitting device to diffuse light and to homogenize the light introduced into the light guide unit. The light-scattering particles and the adhesive material portion can increase the coupling efficiency of the integrated back light unit.