Patents by Inventor Fatam Arzum Simsek-Ege

Fatam Arzum Simsek-Ege has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190131315
    Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.
    Type: Application
    Filed: September 17, 2018
    Publication date: May 2, 2019
    Inventors: Jie Sun, Zhenyu Lu, Roger W. Lindsay, Brian Cleereman, John Hopkins, Hongbin Zhu, Fatam Arzum Simsek-Ege, Prasanna Srinivasan, Purnima Narayanan