Patents by Inventor Fatima ISSA

Fatima ISSA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for carrying out a neutron detector and neutron detector
    Patent number: 10732307
    Abstract: A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: August 4, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE D'AIX-MARSEILLE
    Inventors: Laurent Ottaviani, Vanessa Vervisch, Fatima Issa, Abdallah Lyoussi
  • METHOD FOR CARRYING OUT A NEUTRON DETECTOR AND NEUTRON DETECTOR
    Publication number: 20170363755
    Abstract: A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.
    Type: Application
    Filed: December 21, 2015
    Publication date: December 21, 2017
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUT ENERGIES ALTERNATIVES, UNIVERSITE D'AIX-MARSEILLE
    Inventors: Laurent OTTAVIANI, Vanessa VERVISCH, Fatima ISSA, Abdallah LYOUSSI