Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

Abstract: The present application relates to a superabsorbent polymer and a method for producing the same. The superabsorbent polymer comprises a core structure, a shell layer covering the core structure and a fiber-modified layer covering an outer surface of the shell layer. With the fiber-modified layer, the superabsorbent polymer not only has good water absorption properties, but also has excellent liquid permeability and permeability.

Abstract: The present invention relates to a superabsorbent polymer and a method for producing the same. The superabsorbent polymer includes a core layer polymerized with monomers having carboxylic group, a first shell layer formed from a surface crosslinking agent, and a second shell layer formed from zingiberaceae extracts. By a surface modification on the first shell layer performed from a specific amount of the zingiberaceae extracts, the superabsorbent polymer produced according to the method for producing the same has a good antimicrobial property and deodorizing effects, and retains an original absorbent property.

Abstract: The present invention relates to a superabsorbent polymer and a method for producing the same. The superabsorbent polymer includes a core layer polymerized with monomers having carboxylic group, a first shell layer formed from a surface crosslinking agent, and a second shell layer formed from zingiberaceae extracts. By a surface modification on the first shell layer performed from a specific amount of the zingiberaceae extracts, the superabsorbent polymer produced according to the method for producing the same has a good antimicrobial property and deodorizing effects, and retains an original absorbent property.

Abstract: A superabsorbent polymer includes polymer particles, surface cross-linking agents and particles made of silicon-containing inorganic salt. The polymer particles have cross-linking inside the polymer particles. The surface cross-linking agents are covalently bound to the surface of the polymer particles so as to constitute a surface cross-linked region at the surface of each said resin particle, and the particles made of silicon-containing inorganic salt cover the surface of the polymer particles.

Abstract: A superabsorbent polymer includes polymeric particles, surface cross-linking agents and an extract of a plant of Sapindaceae. The polymeric particles have cross-linking inside the polymeric particles. The surface cross-linking agents are covalently bound to the surface of the polymeric particles so as to constitute a layer of surface cross-linked region at the surface of each polymeric particle, and the extract of the plant of Sapindaceae covers the surface of the polymeric particles.

Abstract: A superabsorbent polymer includes polymer particles, surface cross-linking agents and particles made of silicon-containing inorganic salt. The polymer particles have cross-linking inside the polymer particles. The surface cross-linking agents are covalently bound to the surface of the polymer particles so as to constitute a surface cross-linked region at the surface of each said resin particle, and the particles made of silicon-containing inorganic salt cover the surface of the polymer particles.

Abstract: A superabsorbent polymer includes polymeric particles, surface cross-linking agents and an extract of a plant of Sapindaceae. The polymeric particles have cross-linking inside the polymeric particles. The surface cross-linking agents are covalently bound to the surface of the polymeric particles so as to constitute a layer of surface cross-linked region at the surface of each polymeric particle, and the extract of the plant of Sapindaceae covers the surface of the polymeric particles.

Abstract: An exposure method suitable for a photolithography process is described. First, a wafer with a group of alignment marks formed thereon is provided. A first alignment step is conducted by using the group of the alignment marks on the wafer to obtain a first calibration data. Next, a second alignment step is conducted by using a portion of the group of alignment marks on the wafer to obtain a second calibration data. The first calibration data is then compared with the second calibration data to obtain a comparison result. Next, a photoresist exposure step is conducted on the wafer according to the comparison result.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A method of forming an iso space pattern is provided. In the method, a first material layer is provided, and then a second material layer and a patterned material layer are formed thereon. After that, a first patterned photoresist layer is formed on the patterned material layer to partially cover the patterned material layer and to partially expose the patterned material layer, and the second material layer is then partially removed by using the first patterned photoresist layer and the patterned material layer as a mask. Afterwards, the iso space pattern constituted by the etched second material layer is formed after the first patterned photoresist layer and the patterned material layer are removed. Due to twice photolithography and etching processes, it is likely to form the relatively narrow iso space pattern with use of existing photolithography equipments according to the method.

Abstract: An exposure method suitable for a photolithography process is described. First, a wafer with a group of alignment marks formed thereon is provided. A first alignment step is conducted by using the group of the alignment marks on the wafer to obtain a first calibration data. Next, a second alignment step is conducted by using a portion of the group of alignment marks on the wafer to obtain a second calibration data. The first calibration data is then compared with the second calibration data to obtain a comparison result. Next, a photoresist exposure step is conducted on the wafer according to the comparison result.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: Marks and a method for multi-layer alignment. A first layer with first alignment marks is formed on a semiconductor substrate, wherein the first alignment marks are separated parallelly by a predetermined distance. A second layer with second alignment marks is formed on the first layer, wherein the second alignment marks are separated parallelly by a predetermined distance. The shift distance of each first alignment mark is measured to calculate a first midpoint between the first alignments. The shift distance of each second alignment mark is measured to calculate a second midpoint between the second alignments. A third midpoint acting as a datum point between the fist midpoint and the second midpoint is calculated.

Abstract: Marks and a method for multi-layer alignment. A first layer with first alignment marks is formed on a semiconductor substrate, wherein the first alignment marks are separated parallelly by a predetermined distance. A second layer with second alignment marks is formed on the first layer, wherein the second alignment marks are separated parallelly by a predetermined distance. The shift distance of each first alignment mark is measured to calculate a first midpoint between the first alignments. The shift distance of each second alignment mark is measured to calculate a second midpoint between the second alignments. A third midpoint acting as a datum point between the fist midpoint and the second midpoint is calculated.